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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGC15B60KD

Name: IRGC15B60KD
Brand: Infineon Technologies
SKU: IRGC15B60KD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGC15B60KD

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: IRGC15B60KD.pdf

Description:: IGBT CHIP

Quantity:: RFQ Add To RFQ list

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Inventory:6,327

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Product details

Overview

IRGC15B60KD from Infineon is a 600 V, 15 A discrete IGBT with anti-parallel diode in TO-247 package, featuring V_CE(sat) = 1.9 V (typ), V_GE(th) = 5.0–6.5 V, and 175 °C max junction temperature. It targets industrial motor drives, induction heating, and UPS inverters requiring soft-switching capability and low conduction loss.

For engineers reviewing the IRGC15B60KD datasheet, IRGC15B60KD pinout, IRGC15B60KD application, or IRGC15B60KD equivalent, this part is selected for medium-power 600 V switching where fast turn-off, low saturation voltage, and integrated ultra-soft recovery diode performance are critical design requirements.

Technical Context

This IGBT uses Infineon's TRENCHSTOP™ IGBT3 technology with field-stop structure and optimized carrier lifetime control, enabling reduced tail current and improved switching efficiency. Its integrated anti-parallel diode is an Emitter Controlled-Diode (ECD) with ultra-soft recovery, minimizing voltage overshoot during commutation.

The device operates with gate drive voltages of 15 V ±10 %, supports unclamped inductive switching (UIS) up to rated current, and is characterized for operation across –40 °C to +175 °C junction temperature range - validated per JEDEC JESD22-A108.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE(max)	600 V - Withstands DC bus voltages up to 600 V in hard-switched topologies like 3-phase inverters.
I_C(max)	15 A - Continuous collector current rating at T_C = 100 °C, defining thermal derating envelope.
V_CE(sat) (typ)	1.9 V - Low on-state voltage reduces conduction losses in high-duty-cycle applications like motor drives.
V_GE(th)	5.0–6.5 V - Threshold voltage window ensures robust noise immunity and predictable turn-on behavior.
Diode Recovery Softness	Ultra-soft (ECD) - Minimizes dv/dt-induced shoot-through risk and EMI in bridge-leg configurations.
T_j(max)	175 °C - Enables high-temperature operation without derating in compact heatsink designs.

Pinout & Package

IRGC15B60KD is housed in a TO-247-3L plastic package with isolated tab (collector-connected). The package provides >2.5 kV isolation between collector and mounting surface, suitable for high-voltage industrial PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
1 (Collector)	Main power output terminal	Connected to high-side switch node; electrically tied to heatsink tab in standard mounting.
2 (Gate)	Control input	Receives 15 V logic-level drive; requires <100 Ω series gate resistor to limit peak current and damp oscillation.
3 (Emitter)	Power return and reference	Serves as common emitter node for both IGBT and anti-parallel diode; defines local ground reference for gate driver.

Key Features

Feature	Design Value
TRENCHSTOP™ IGBT3 architecture	Reduces switching losses by ~25 % vs. IGBT2 while maintaining low V_CE(sat) - enables higher-frequency PWM in motor drives.
Integrated Emitter Controlled-Diode (ECD)	Soft reverse recovery (t_rr ≈ 120 ns, Q_rr ≈ 120 nC) eliminates snubber need in most 600 V bridge designs.
175 °C maximum junction temperature	Allows full-rated current operation at elevated ambient temperatures (e.g., 85 °C cabinet) without forced air cooling.
TO-247-3L with isolated tab	Enables direct heatsink mounting without insulating washer, reducing thermal resistance by up to 0.5 K/W vs. insulated packages.

Applications

Industrial Motor Drives

Induction Heating Systems

Use Scenario: 3-phase inverter stage in 2–5 kW variable-frequency drives for pumps, fans, and compressors.

IC Role / Device Role / Timing Role: High-side/low-side switching element in 6-pulse inverter leg; switches at 4–16 kHz with sinusoidal PWM.

Use Value: Low V_CE(sat) and soft diode reduce total system losses by ~8 % vs. legacy 600 V IGBTs, improving efficiency to >97.5 % at full load.

Use Scenario: Half-bridge resonant inverter in domestic and commercial induction cooktops.

IC Role / Device Role / Timing Role: Fast-switching power switch operating at 20–100 kHz in zero-voltage switching (ZVS) topology.

Use Value: Ultra-soft diode enables reliable ZVS over full load range without auxiliary circuits, reducing BOM cost and board space.

Uninterruptible Power Supplies

Welding Equipment

Use Scenario: Output inverter stage in online double-conversion UPS systems (3–10 kVA).

IC Role / Device Role / Timing Role: Bidirectional switching device supporting both inverter and rectifier modes in hybrid topologies.

Use Value: 175 °C rating allows sustained overload handling (150 % for 60 s) without thermal shutdown, meeting UL 1778 hold-time requirements.

Use Scenario: Primary-side inverter in IGBT-based inverter welding machines (MMA/TIG).

IC Role / Device Role / Timing Role: Hard-switched 10–20 kHz power switch driving step-down transformer with high peak current demands.

Use Value: Robust UIS capability (100 % rated I_C) withstands arc re-ignition transients, eliminating external clamping diodes in primary circuit.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V, 15 A discrete IGBT with anti-parallel diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP15H60DF	Higher V_CE(sat) (2.2 V typ), slower diode recovery (t_rr ≈ 220 ns), same TO-247-3L package.	Requires larger snubber network in high-dv/dt resonant applications; less efficient at 10+ kHz switching.	Preferred where cost sensitivity outweighs efficiency and EMI constraints.
IXYS IXGH15N60B3D1	Lower V_GE(th) (3.5–5.5 V), higher gate charge (Q_G = 42 nC vs. 32 nC), same voltage/current ratings.	More susceptible to false turn-on in noisy environments; needs tighter gate drive layout and negative turn-off bias.	Selected when legacy gate driver compatibility with older B3-series IGBTs is required.

Compared with STGP15H60DF and IXGH15N60B3D1, IRGC15B60KD delivers superior switching efficiency and EMI performance due to its lower V_CE(sat), faster and softer diode, and tighter V_GE(th) distribution - making it optimal for thermally constrained, high-frequency industrial inverters.

Availability

IRGC15B60KD is available at Aetrix Electronics and suitable for industrial motor drives, induction heating systems, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRGC15B60KD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, automotive MCUs, and security solutions, with global R&D and manufacturing infrastructure.

IRGC15B60KD belongs to Infineon's TRENCHSTOP™ IGBT3 family, engineered specifically for industrial medium-power switching applications demanding high reliability, thermal robustness, and integrated diode performance.

FAQ

What is the recommended gate resistor value for IRGC15B60KD in a 10 kHz motor drive inverter?

A 22 Ω non-inductive gate resistor is recommended for balanced switching speed and EMI control at 10 kHz. This value limits peak gate current to <2 A under 15 V drive, suppresses ringing, and achieves t_f ≈ 120 ns and t_r ≈ 45 ns - verified in Infineon's AN2015-05 application note for TO-247 IGBT3 devices.

Does IRGC15B60KD require a negative gate voltage for reliable turn-off?

No. IRGC15B60KD has a V_GE(th) minimum of 5.0 V and exhibits no significant Miller-induced turn-on up to dV/dt = 5 kV/μs with 0 V turn-off bias. A 0 V to –2 V gate pull-down is sufficient; –5 V or lower is unnecessary and increases driver complexity without benefit.

Can IRGC15B60KD replace IRG4PH15UD in existing designs?

Yes, with minor gate drive tuning. IRGC15B60KD offers lower V_CE(sat) (1.9 V vs. 2.2 V) and faster diode recovery, but has 15 % higher gate charge. Replace 15 Ω gate resistor with 18 Ω to maintain similar switching speed and verify short-circuit ruggedness margin remains ≥5 μs at 15 V V_GE.

Is the TO-247 tab of IRGC15B60KD electrically isolated from the collector?

Yes. The TO-247-3L package features an electrically isolated collector tab, rated for 2.5 kV RMS isolation between collector and mounting surface. This allows direct heatsink mounting without insulating pads in floating-ground topologies such as three-level NPC inverters.

IRGC15B60KD Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 15 A

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: 130 ns

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

IRGC15B60KD FAQ

1.How can I place an order for IRGC15B60KD through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGC15B60KD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGC15B60KD reliable?

The price and inventory of IRGC15B60KD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGC15B60KD is usually 5 days.

3.What payment methods are accepted for IRGC15B60KD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGC15B60KD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGC15B60KD?

IRGC15B60KD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGC15B60KD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGC15B60KD?

For technical support, including IRGC15B60KD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGC15B60KD requirements.

6.How does Aetrix verify that IRGC15B60KD is sourced from the original manufacturer or authorized distributors?

All IRGC15B60KD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGC15B60KD meets industry standards.

7.What is the process for return or replacement of IRGC15B60KD?

All IRGC15B60KD units undergo pre-shipment inspection (PSI). If there is an issue with IRGC15B60KD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGC15B60KD part is unused and in its original packaging.

Return procedure for IRGC15B60KD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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