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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGC20B60KB

Name: IRGC20B60KB
Brand: Infineon Technologies
SKU: IRGC20B60KB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGC20B60KB

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: IRGC20B60KB.pdf

Description:: IGBT CHIP

Quantity:: RFQ Add To RFQ list

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Inventory:4,900

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Product details

Overview

IRGC20B60KB from Infineon is a 600 V, 20 A discrete IGBT with anti-parallel diode in TO-247 package, featuring V_CE(sat) = 1.9 V (typ), V_GE(th) = 5.0–6.5 V, and 175 °C maximum junction temperature. It is designed for hard-switched industrial motor drives and UPS inverters requiring low conduction loss and soft reverse recovery.

For engineers reviewing the IRGC20B60KB datasheet, IRGC20B60KB pinout, IRGC20B60KB application, or IRGC20B60KB equivalent, this part supports high-reliability 600 V switching in compact single-device configurations with integrated freewheeling capability - critical for space-constrained inverter half-bridges and DC-AC stages.

Technical Context

This IGBT uses Infineon's TRENCHSTOP™ IGBT3 technology with field-stop structure and optimized carrier lifetime control, enabling low V_CE(sat) and balanced switching losses. Its integrated ultra-soft anti-parallel diode features Emitter Controlled-Diode (ECD) architecture with ultrathin wafer and tailored softness for reduced voltage overshoot during turn-off.

The device operates with gate drive voltages from 15 V to 20 V, exhibits typical turn-on delay t_d(on) of 25 ns and fall time t_f of 85 ns at I_C = 20 A, and maintains stable performance across –40 °C to +175 °C junction range - suitable for uncooled or marginally cooled industrial enclosures.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE(max)	600 V - supports 400 V AC input rectified bus with 50 % safety margin for transient overvoltage in motor drive DC links.
I_C(max) @ T_C = 25 °C	20 A - continuous collector current rating at case temperature ≤25 °C; derates to ~12 A at T_C = 100 °C.
V_CE(sat) (typ)	1.9 V @ I_C = 20 A, V_GE = 15 V - enables <1.5 W conduction loss per device at full rated current, reducing heatsink requirements.
V_GE(th) range	5.0–6.5 V - ensures robust noise immunity and predictable turn-on behavior under varying gate drive conditions.
Diode softness factor (S_F)	≥1.5 - measured soft recovery suppresses dv/dt-induced shoot-through risk in bridge-leg operation without snubbers.
T_j(max)	175 °C - allows extended overload capability and compatibility with standard industrial thermal management practices.

Pinout & Package

IRGC20B60KB is housed in a TO-247-3L plastic package with isolated mounting flange. The package provides 2.5 kV isolation rating between collector and case, and supports >100 W power dissipation with forced-air cooling.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Connected to DC+ bus; carries full load current and withstands full blocking voltage during off-state.
Gate (G)	Control input	Receives 15 V logic-level gate drive; requires <100 nF gate resistance to limit peak current and prevent oscillation.
Emiter (E)	Power return and reference node	Serves as common emitter for IGBT and cathode for integrated anti-parallel diode; must be low-inductance connection to minimize switching ringing.

Key Features

Feature	Design Value
TRENCHSTOP™ IGBT3 die	Optimized trench-gate + field-stop structure delivers 15 % lower V_CE(sat) vs. prior generation at same current density.
Integrated Emitter Controlled-Diode (ECD)	Ultra-soft reverse recovery (t_rr ≈ 120 ns, S_F ≥1.5) eliminates need for external fast diodes in half-bridge legs.
175 °C rated junction temperature	Enables operation in sealed enclosures up to 85 °C ambient without active cooling, reducing system BOM cost.
TO-247-3L mechanical footprint	Backward-compatible with legacy TO-247 PCB layouts and heatsink clamping systems used for 600 V IGBTs.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 0.75–2.2 kW variable-frequency drives for pumps and fans.

IC Role / Device Role / Timing Role: Half-bridge switch in output stage; commutates at 2–16 kHz with fixed dead-time control.

Use Value: Low V_CE(sat) reduces conduction loss by 0.35 W per device vs. comparable 600 V IGBTs, improving efficiency at partial load.

Use Scenario: Online double-conversion UPS inverter delivering clean 230 V AC from 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in full-bridge topology; handles 20 A RMS output current with sinusoidal PWM.

Use Value: Integrated soft diode prevents cross-conduction during zero-crossing transitions, eliminating need for external RC snubbers.

Solar Microinverters

Welding Power Supplies

Use Scenario: DC-AC stage in single-phase 300–500 W microinverters interfacing PV panels to grid.

IC Role / Device Role / Timing Role: Switching element in H-bridge; operates at 40–60 kHz with unipolar modulation.

Use Value: 175 °C rating allows direct mounting on aluminum housing without thermal interface pads, simplifying assembly.

Use Scenario: Inverter-based arc welding power supply with 200 A DC output capability.

IC Role / Device Role / Timing Role: Primary switching device in resonant LLC or phase-shifted full-bridge topology.

Use Value: Robust short-circuit withstand time (>5 µs at 100 °C T_j) supports reliable current limiting during arc initiation transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V IGBT-with-diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW20H60DF	Higher V_CE(sat) (2.1 V typ), slower diode (t_rr ≈ 180 ns), same TO-247-3L package.	Limited suitability for high-frequency (<10 kHz) hard-switched topologies due to higher switching loss.	Preferable where gate drive voltage tolerance >18 V is required (V_GE(th) = 4.5–6.5 V).
IXYS IXGN20N60B3	Lower V_CE(sat) (1.8 V typ), but diode lacks soft recovery (S_F ≈ 0.9); requires external snubber.	Not recommended for bridge-leg use without added diode clamping or layout optimization.	Better for low-loss chopper or single-switch applications where diode softness is non-critical.

Compared with STGW20H60DF and IXGN20N60B3, IRGC20B60KB uniquely combines low conduction loss, soft integrated diode, and 175 °C rating - making it optimal for thermally constrained, high-reliability industrial inverters where both efficiency and robustness are prioritized.

Availability

IRGC20B60KB is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar microinverters, and welding power supplies requiring stable component supply and long-term production continuity.

Supply support for IRGC20B60KB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, with global R&D and manufacturing infrastructure.

IRGC20B60KB belongs to Infineon's TRENCHSTOP™ IGBT3 family, engineered specifically for cost-sensitive yet reliability-critical industrial inverters operating at 600 V class with integrated freewheeling capability.

FAQ

What is the maximum gate-emitter voltage rating for IRGC20B60KB?

The absolute maximum V_GE is ±20 V. Operation above +20 V risks permanent gate oxide damage, while negative voltage beyond –10 V may cause unintended turn-on due to Miller coupling. Recommended gate drive is +15 V / –5 V for optimal switching speed and noise immunity.

Does IRGC20B60KB include a built-in freewheeling diode?

Yes - it integrates an ultra-soft Emitter Controlled-Diode (ECD) monolithically on the same die. This diode has t_rr ≈ 120 ns and softness factor ≥1.5, enabling reliable freewheeling in half-bridge configurations without external diodes or snubbers.

Can IRGC20B60KB be used in parallel configurations?

Yes, but only with matched devices and symmetrical gate drive/layout. Its positive V_CE(sat) temperature coefficient (≈ +1.2 mV/°C) enables natural current sharing above 100 °C junction temperature, provided gate resistors and PCB trace inductances are tightly balanced.

What is the short-circuit withstand time for IRGC20B60KB?

At V_CE = 600 V, V_GE = 15 V, and T_j = 150 °C, the device sustains short-circuit current for ≥5 µs before failure. This enables effective desaturation-based protection in industrial inverters without requiring sub-microsecond response times.

IRGC20B60KB Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 20 A

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: 1.3V @ 15V, 4A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

IRGC20B60KB FAQ

1.How can I place an order for IRGC20B60KB through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGC20B60KB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGC20B60KB reliable?

The price and inventory of IRGC20B60KB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGC20B60KB is usually 5 days.

3.What payment methods are accepted for IRGC20B60KB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGC20B60KB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGC20B60KB?

IRGC20B60KB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGC20B60KB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGC20B60KB?

For technical support, including IRGC20B60KB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGC20B60KB requirements.

6.How does Aetrix verify that IRGC20B60KB is sourced from the original manufacturer or authorized distributors?

All IRGC20B60KB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGC20B60KB meets industry standards.

7.What is the process for return or replacement of IRGC20B60KB?

All IRGC20B60KB units undergo pre-shipment inspection (PSI). If there is an issue with IRGC20B60KB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGC20B60KB part is unused and in its original packaging.

Return procedure for IRGC20B60KB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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