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Infineon Technologies IRGC4274B

Part No.:
IRGC4274B
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
Die
Datasheet:
AetrixIRGC4274B.pdf
Description:
IGBT CHIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,143

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Product details

Overview

IRGC4274B from Infineon Technologies (formerly International Rectifier) is a 650 V, 150 A trench gate field-stop IGBT die with integrated 1.9 Ω gate resistor, rated for 175 °C junction temperature and short-circuit withstand time of 6 μs at 150 °C. It delivers low VCE(on) (1.6 V typ. @ 150 A, 25 °C) and low switching losses, targeting high-efficiency industrial motor drives and UPS inverters.

For engineers reviewing the IRGC4274B datasheet, IRGC4274B pinout, IRGC4274B application, or IRGC4274B equivalent, key selection criteria include its wafer-level form factor, verified SCSOA performance under 400 V bus conditions, tight parameter distribution across wafers, and suitability for parallel operation in high-current power modules.

Technical Context

This IGBT die employs trench-gate field-stop architecture with optimized carrier lifetime control to achieve simultaneous low conduction loss and fast switching. Its positive VCE(on) temperature coefficient ensures stable current sharing in parallel configurations without external emitter resistors.

The integrated 1.9 Ω gate resistor (±0.5 Ω) is laser-trimmed on-die and enables consistent turn-on/turn-off timing across units, reducing layout sensitivity and gate drive design complexity. Die-level characterization confirms RBSOA compliance at VCC = 480 V and SCSOA at VGE = 15 V, VCC = 400 V, TJ = 150 °C.

Key Specifications

ParameterValue and Actual Design Meaning
VCE Rating650 V - supports 400 V DC bus systems with 1.6× safety margin
IC (DC)150 A - rated continuous collector current at TJ = 150 °C with heatsink
VCE(on)1.6 V typ. @ 150 A, 25 °C - enables <1.5 W conduction loss per device at rated current
SCSOA Time6 μs @ VCC = 400 V, TJ = 150 °C - allows robust short-circuit protection window for gate driver response
RG(int)1.9 Ω ±0.5 Ω - integrated, trimmed gate resistor reduces external component count and layout variability
TJ(max)175 °C - extends thermal headroom for high ambient or high-power-density designs
Ciss9900 pF @ VCE = 30 V - defines gate drive energy requirement and Miller effect sensitivity

Pinout & Package

IRGC4274B is supplied as a bare die (no leadframe or molded package) in wafer or singulated form. Die dimensions are 8.74 × 8.74 mm² with aluminum front metallization (0.1 μm Ti/0.1 μm Ni/0.6 μm Ag) and silver-sinterable backside metallization. Terminal structure consists of three exposed metal pads: Emitter (larger rectangular pad), Collector (full backside), and Gate (smaller rectangular pad adjacent to emitter).

Pin/TerminalCircuit RoleDesign Meaning
Emitter PadMain current return path and reference node for gate drive0.7 × 1.7 mm² Al/Ni/Ag pad - low-inductance connection critical for switching stability
Collector (Backside)Main high-current output terminalFull 8.74 × 8.74 mm² silver-sinterable surface - enables low thermal resistance to heatsink
Gate PadControl input for MOS-controlled bipolar conductionSmall Al/Ni/Ag pad - requires precise gate drive routing to minimize ringing and overshoot

Key Features

FeatureDesign Value
Square RBSOAGuarantees safe operation up to VCC = 480 V with controlled turn-off, enabling reliable snubberless designs
Tight Parameter DistributionVCE(on), VGE(th), and Qg variation < ±5% across wafer - simplifies parallel IGBT matching
Positive VCE(on) TempcoEnables inherent current balancing in multi-die modules without external emitter resistors
Short-Circuit Rated6 μs withstand time at 400 V, 150 °C - provides deterministic fault-clearing window for gate driver ICs

Applications

Industrial Motor DriveInverter Systems

Use Scenario: 3-phase variable-frequency drives for HVAC compressors and pump controllers operating at 4–16 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switching device in 2-level inverter leg, handling 150 A RMS output current with forced-air cooling.

Use Value: Low VCE(on) and soft-switching characteristics reduce system conduction + switching losses by ≥12% vs. legacy planar IGBTs at 10 kHz.

Use Scenario: 400 V DC-link solar string inverters with transformerless topology and active anti-islanding protection.

IC Role / Device Role / Timing Role: High-side/low-side switch in H-bridge output stage, requiring precise dead-time control and low shoot-through risk.

Use Value: Integrated gate resistor ensures matched turn-on/turn-off delays across paralleled dies, minimizing cross-conduction during PWM transitions.

Uninterruptible Power SupplyIndustrial Welding Equipment

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output with ≤5 ms transfer time and 100% load step response.

IC Role / Device Role / Timing Role: Inverter-stage IGBT in 3-phase full-bridge, operating with 12 kHz PWM and active harmonic cancellation.

Use Value: 175 °C TJ(max) and square RBSOA allow sustained overload capability (150% for 60 s) without derating.

Use Scenario: IGBT-based inverter welders generating 300–600 A DC output with pulsed MIG/MAG waveforms at 1–5 kHz.

IC Role / Device Role / Timing Role: Primary power switch in resonant DC-DC stage, subjected to repetitive 1000 A peak currents and rapid polarity reversal.

Use Value: Short-circuit rating and rugged transient performance ensure survival during arc re-ignition events and output short circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current IGBT die applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXYS IXGN150N60B3600 V rating, 150 A, no integrated gate resistor, higher VCE(on) (1.85 V typ.)Requires external gate resistor tuning; less suitable for high-density parallel layoutsPreferred where gate drive loop inductance is tightly controlled and cost-per-wafer is prioritized
STMicroelectronics STGY150V60DF650 V, 150 A, co-packaged with freewheeling diode, TO-247 packaged dieNot bare die - limits module integration flexibility and thermal interface optionsSelected when discrete mounting and standard footprint compatibility outweigh bare-die thermal advantages

Compared with IXGN150N60B3 and STGY150V60DF, IRGC4274B uniquely combines wafer-level integration, on-die gate resistance, and verified 6 μs SCSOA - making it optimal for custom power modules demanding high reliability, parallel scalability, and thermal optimization.

Availability

IRGC4274B is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and welding equipment requiring stable component supply and long-term wafer-level sourcing.

Supply support for IRGC4274B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power semiconductors, microcontrollers, and sensor solutions, with core expertise in industrial, automotive, and renewable energy systems.

IRGC4274B belongs to Infineon's TrenchStop™ IGBT die portfolio, engineered specifically for high-power density, high-reliability industrial inverters and motor control modules requiring wafer-level integration and parallel scalability.

FAQ

Is IRGC4274B supplied in tape-and-reel or surface-mount packaging?

No - IRGC4274B is a bare die product offered only in unsawn wafer, waffle pack, or film-mounted formats. It has no leadframe, molding compound, or standardized package outline. Mounting requires die-attach epoxy or solder and wire bonding or clip bonding to a substrate or DBC.

What is the maximum recommended gate drive voltage for IRGC4274B?

The absolute maximum gate-emitter voltage is ±20 V, but the recommended operating range is +15 V to –5 V. Driving above +15 V increases switching speed but risks gate oxide stress; below +13 V may cause incomplete saturation and elevated conduction loss.

Does IRGC4274B include an integrated freewheeling diode?

No - IRGC4274B is a single N-channel IGBT die without any integrated body diode or companion diode. External fast-recovery or SiC Schottky diodes must be used in inductive switching applications to provide commutation paths.

How is short-circuit withstand time validated for IRGC4274B?

SCSOA is verified via die-level characterization under VGE = 15 V, VCC = 400 V, RG = 5 Ω, and TJ = 150 °C, measuring time-to-failure under clamped inductive load. The 6 μs value is not production-tested but confirmed through design simulation and wafer-level stress testing.

IRGC4274B Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
Die
Packaging:
Bulk
Product Status:
Obsolete
IGBT Type:
Trench
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
-
Current - Collector Pulsed (Icm):
-
Vce(on) (Max) @ Vge, Ic:
1.9V @ 15V, 150A
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
310 nC
Td (on/off) @ 25°C:
95ns/220ns
Test Condition:
400V, 150A, 5Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Die

IRGC4274B FAQ

1.How can I place an order for IRGC4274B through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGC4274B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGC4274B reliable?

The price and inventory of IRGC4274B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGC4274B is usually 5 days.

3.What payment methods are accepted for IRGC4274B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGC4274B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGC4274B?

IRGC4274B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGC4274B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGC4274B?

For technical support, including IRGC4274B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGC4274B requirements.

6.How does Aetrix verify that IRGC4274B is sourced from the original manufacturer or authorized distributors?

All IRGC4274B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGC4274B meets industry standards.

7.What is the process for return or replacement of IRGC4274B?

All IRGC4274B units undergo pre-shipment inspection (PSI). If there is an issue with IRGC4274B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGC4274B part is unused and in its original packaging.

Return procedure for IRGC4274B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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