Infineon Technologies IRGC4275B

Overview

IRGC4275B from Infineon Technologies (formerly International Rectifier) is a 650 V, 800 A clamped-inductive-load-rated n-channel insulated gate bipolar transistor (IGBT) die in wafer format, featuring trench IGBT technology, integrated 2.0 Ω gate resistor, and 175 °C maximum junction temperature. It delivers low V_CE(sat) of 1.6 V at 200 A/25 °C and supports industrial motor drives requiring high-current switching with short-circuit ruggedness.

For engineers reviewing the IRGC4275B datasheet, IRGC4275B pinout, IRGC4275B application, or IRGC4275B equivalent, this die-level IGBT requires attention to gate-emitter voltage limits (±20 V), RBSOA squareness, SCSOA duration (5.5 µs), thermal derating at 175 °C, and wafer-handling protocols for known-good-die integration into custom power modules.

Technical Context

This IGBT die employs trench-gate field-stop structure to achieve simultaneous low conduction loss (V_CE(sat) = 1.6 V typ. @ 200 A, 25 °C) and low switching losses (t_d(off) = 330 ns @ 175 °C). Its positive V_CE(sat) temperature coefficient enables stable current sharing in parallel configurations.

The device is characterized-not production-tested-for key dynamic parameters including Q_g = 380 nC, C_iss = 12940 pF, and full-square RBSOA up to 800 A at 480 V, with short-circuit withstand time of 5.5 µs under V_GE = 15 V, V_CC = 400 V, and T_J = 150 °C conditions.

Key Specifications

Pinout & Package

DIE on 150 mm wafer, unmounted, with front-side aluminum metallization and backside Ti/Ni/Ag stack; no leadframe or molded package. Die size: 10.0 × 10.0 mm²; thickness: 70 µm; flat position: 0°.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current IGBT die applications.

Compared with IXGN100N60B3 and IKW40N65ES5, IRGC4275B uniquely combines wafer-level form factor, 800 A clamped current, 5.5 µs SCSOA, and integrated gate resistor-making it irreplaceable for high-power, module-integrated industrial inverter designs requiring parallel scalability and transient ruggedness.

Availability

IRGC4275B is available at Aetrix Electronics and suitable for industrial motor drives, inverter systems, uninterruptible power supplies, and welding equipment requiring stable component supply of known-good IGBT die for custom power module assembly.

Supply support for IRGC4275B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors for industrial, automotive, and renewable energy markets.

The IRGC4275B belongs to Infineon's high-current IGBT die portfolio, engineered specifically for integration into custom power modules used in multi-hundred-kW industrial inverters and traction systems.

FAQ

Is IRGC4275B supplied as singulated die or on wafer?

IRGC4275B is supplied as a sawn wafer on film frame, not as individual singulated die. Each 150 mm wafer contains up to 136 devices. Singulation, dicing, and KGD testing are customer-responsible unless separately contracted with Infineon.

What is the recommended gate drive voltage and layout for IRGC4275B?

Gate-emitter voltage must stay within ±20 V. A 15 V turn-on and 0 V turn-off is standard. Layout requires minimized gate loop inductance (<10 nH), Kelvin emitter connection for accurate V_GE sensing, and separation of power and gate routing to avoid coupling.

Does IRGC4275B require external gate resistors given its internal 2.0 Ω resistor?

Yes-external gate resistors are still required to control switching speed, suppress ringing, and manage EMI. The internal 2.0 Ω resistor reduces sensitivity to PCB layout but does not eliminate need for external R_G (typically 2–10 Ω in series) to tune dV/dt and di/dt.

Can IRGC4275B be paralleled without external emitter resistors?

Yes-its positive V_CE(sat) temperature coefficient and tight parameter distribution enable stable current sharing across parallel dies without emitter ballast resistors, provided thermal coupling and gate drive symmetry are maintained.