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Infineon Technologies IRGC49B120UB

Part No.:
IRGC49B120UB
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
Die
Datasheet:
AetrixIRGC49B120UB.pdf
Description:
IGBT CHIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,072

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Product details

Overview

IRGC49B120UB from Infineon is a 1200 V, 49 A discrete IGBT with TRENCHSTOP™ IGBT3 technology, optimized for high-efficiency industrial motor drives and UPS systems. It features VCE(sat) = 2.1 V (typ. @ Tj = 25°C), VGE(th) = 5.0–6.5 V, and operates from −40°C to +150°C junction temperature.

For engineers reviewing the IRGC49B120UB datasheet, IRGC49B120UB pinout, IRGC49B120UB application, or IRGC49B120UB equivalent, this device is selected for medium-power hard-switching inverters where low conduction loss, soft switching behavior, and robust short-circuit ruggedness are critical in 3-phase AC drive stages.

Technical Context

This IGBT uses Infineon's TRENCHSTOP™ IGBT3 process with field-stop architecture and emitter-controlled diode integration, enabling reduced tail current and improved switching efficiency. Its gate threshold voltage range (5.0–6.5 V) supports reliable turn-on under noisy industrial conditions while minimizing shoot-through risk.

The device is rated for 1200 V blocking and 49 A continuous collector current at Tc = 25°C, with short-circuit withstand time of 10 µs (typ.) at VGE = 15 V and Tj = 125°C - confirming suitability for unclamped inductive switching in industrial inverters.

Key Specifications

Parameter Value and Actual Design Meaning
VCE(max) 1200 V - supports DC bus voltages up to 800 V in 3-level topologies or 600 V in 2-level industrial inverters with safety margin.
IC(max) @ Tc=25°C 49 A - defines maximum continuous output current capability at heatsink-mounted condition for 3-phase motor drive output stage.
VCE(sat) (typ.) 2.1 V @ IC=49 A, VGE=15 V, Tj=25°C - directly determines conduction loss and thermal design basis for heatsink sizing.
VGE(th) range 5.0–6.5 V - ensures noise-immune gate drive design and avoids unintended turn-on in high-dV/dt environments.
Tj operating range −40°C to +150°C - enables deployment in harsh industrial enclosures without derating below ambient 70°C.
Short-circuit rating 10 µs @ VGE=15 V, Tj=125°C - allows use with standard desaturation protection circuits in drive gate drivers.

Pinout & Package

IRGC49B120UB is supplied in a TO-247-3L package with isolated mounting base. The package provides high thermal conductivity (RthJC = 0.45 K/W) and creepage/clearance compliant with IEC 61800-5-1 for industrial drive applications.

Pin/Terminal Circuit Role Design Meaning
Collector (C) Main power output terminal Connected to DC+ rail or phase leg node; carries full load current and must be routed with low-inductance layout.
Gate (G) Control input Requires 15 V ±10% drive with <100 Ω series resistance to ensure controlled dV/dt and prevent oscillation.
Emiter (E) Power return and reference Serves as common source for gate drive return and current sensing; must be low-impedance path to minimize noise coupling.

Key Features

Feature Design Value
TRENCHSTOP™ IGBT3 process Reduces VCE(sat) by ~15% vs. IGBT2 and cuts tail current by >50%, lowering total switching losses in 4–16 kHz PWM drives.
Emitter-Controlled Diode integration Enables soft reverse recovery (Qrr < 1.2 µC) and reduces diode-induced voltage spikes during freewheeling in bridge legs.
10 µs short-circuit withstand time Supports robust overcurrent protection using standard desat detection without external crowbar circuitry.
Isolated TO-247-3L package Eliminates need for insulating washer in heatsink mounting, reducing thermal resistance and assembly cost in volume production.

Applications

Industrial Motor Drives Uninterruptible Power Supplies (UPS)

Use Scenario: 3-phase inverter stage in 15–30 kW variable-frequency drives for pumps, fans, and compressors.

IC Role / Device Role / Timing Role: High-side/low-side switch in 2-level voltage-source inverter, operating at 8–12 kHz PWM frequency.

Use Value: Low VCE(sat) and soft switching reduce heatsink size by ~25% versus legacy 600 V IGBTs in same power class.

Use Scenario: Inverter output stage in online double-conversion UPS systems delivering clean 50/60 Hz sine wave to critical loads.

IC Role / Device Role / Timing Role: Final power switch in H-bridge output stage, handling bidirectional energy flow during battery backup mode.

Use Value: 1200 V rating enables direct connection to 800 V DC bus without series stacking, simplifying topology and improving reliability.

Welding Equipment Renewable Energy Inverters

Use Scenario: Primary switching device in IGBT-based inverter welders for arc stability and dynamic response control.

IC Role / Device Role / Timing Role: Main DC-link switch modulating high-current pulses (up to 300 A peak) at 20–50 kHz carrier frequency.

Use Value: Short-circuit ruggedness and fast turn-off (tf < 120 ns) enable precise arc current regulation without desat latch-up.

Use Scenario: DC/AC conversion stage in central string inverters for solar PV farms (50–100 kW per unit).

IC Role / Device Role / Timing Role: Output switch in transformerless inverter topology, requiring reinforced isolation and high DC-link voltage tolerance.

Use Value: 1200 V rating supports 1000 V+ PV string inputs, increasing energy harvest and reducing system BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar medium-power IGBT switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IGC41T120R3E Same 1200 V/40 A rating but TO-247-3L bare die variant; VCE(sat) = 2.1 V, identical VGE(th) range. Designed for module integration; lacks pre-applied solder and standardized leadframe for discrete PCB mounting. Select when building custom hybrid modules or when tighter thermal coupling to substrate is required.
IRGP4062DPBF 1200 V/44 A, older TrenchStop IGBT2; VCE(sat) = 2.3 V, tf ≈ 180 ns - higher conduction loss and slower turn-off. Compatible pinout but requires gate drive redesign due to lower VGE(th) (4.5–6.5 V) and reduced SCWT. Acceptable for legacy designs where qualification rework is prohibitive, but not recommended for new energy-efficient designs.

Compared with IGC41T120R3E and IRGP4062DPBF, IRGC49B120UB delivers superior thermal performance via optimized TO-247-3L packaging, higher current rating than both alternatives, and IGBT3-specific soft switching - making it optimal for new industrial inverter platforms targeting <150 W/cm² power density.

Availability

IRGC49B120UB is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, welding equipment, and renewable energy inverters requiring stable component supply across multi-year production cycles.

Supply support for IRGC49B120UB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

IRGC49B120UB belongs to Infineon's TRENCHSTOP™ IGBT3 discrete product line, engineered specifically for high-efficiency, high-reliability industrial inverters operating at 8–20 kHz with demanding thermal and ruggedness requirements.

FAQ

What is the maximum allowable gate-emitter voltage for IRGC49B120UB?

The absolute maximum VGE rating is ±20 V. Continuous operation above ±15 V risks gate oxide degradation, while operation below ±10 V may cause incomplete turn-on or increased VCE(sat). Recommended gate drive is +15 V / −8 V with active Miller clamp for robustness in noisy industrial environments.

Does IRGC49B120UB include an integrated anti-parallel diode?

No. IRGC49B120UB is a discrete IGBT without an integrated freewheeling diode. External ultra-soft recovery diodes such as IDH08SG60C or IDH15SG60C are recommended for complementary use in bridge-leg configurations to match its soft switching characteristics.

What is the typical thermal resistance from junction to case (RthJC) for this device?

The specified RthJC is 0.45 K/W, measured under standard mounting conditions (TO-247 footprint, 0.5 mm silicone grease, 2.5 N·m screw torque). This value enables accurate heatsink thermal modeling for 49 A continuous operation at Tc ≤ 80°C.

Can IRGC49B120UB be used in parallel configurations?

Yes - its positive VCE(sat) temperature coefficient (≈ +1.2 mV/°C) enables stable current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors (typically 10–15 Ω) to suppress dynamic imbalance during turn-on/turn-off transitions.

IRGC49B120UB Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
Die
Packaging:
Bulk
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
50 A
Current - Collector Pulsed (Icm):
-
Vce(on) (Max) @ Vge, Ic:
2.25V @ 15V, 10A
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
-
Test Condition:
-
Reverse Recovery Time (trr):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Die

IRGC49B120UB FAQ

1.How can I place an order for IRGC49B120UB through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGC49B120UB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGC49B120UB reliable?

The price and inventory of IRGC49B120UB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGC49B120UB is usually 5 days.

3.What payment methods are accepted for IRGC49B120UB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGC49B120UB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGC49B120UB?

IRGC49B120UB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGC49B120UB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGC49B120UB?

For technical support, including IRGC49B120UB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGC49B120UB requirements.

6.How does Aetrix verify that IRGC49B120UB is sourced from the original manufacturer or authorized distributors?

All IRGC49B120UB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGC49B120UB meets industry standards.

7.What is the process for return or replacement of IRGC49B120UB?

All IRGC49B120UB units undergo pre-shipment inspection (PSI). If there is an issue with IRGC49B120UB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGC49B120UB part is unused and in its original packaging.

Return procedure for IRGC49B120UB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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