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Infineon Technologies IRGC50B60KB
- Part No.:
- IRGC50B60KB
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
IRGC50B60KB.pdf
- Description:
- IGBT CHIP
- Quantity:
- Payment:
- Shipping:
Inventory:9,353
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Product details
Overview
IRGC50B60KB from Infineon is a 600 V, 50 A discrete IGBT in TO-247 package with 1.9 V typical VCE(sat), 5.0–6.5 V gate threshold range, and −40 °C to 175 °C operating temperature. It belongs to the HighSpeed 3 family, optimized for hard-switching industrial inverters, UPS, and welding equipment requiring low conduction loss and fast switching.
For engineers reviewing the IRGC50B60KB datasheet, IRGC50B60KB pinout, IRGC50B60KB application, or IRGC50B60KB equivalent, this part is selected for high-efficiency 600 V power conversion where VCE(sat) < 2.0 V, tr/tf < 100 ns, and rugged short-circuit withstand capability are critical design requirements.
Technical Context
This IGBT uses TrenchStop™ and Fieldstop technology to achieve low VCE(sat) and soft switching behavior without external snubbers. Its gate threshold voltage (VGE(th)) of 5.0–6.5 V ensures noise immunity in noisy industrial environments while enabling direct drive from standard 15 V gate drivers.
The device features a monolithic anti-parallel diode with ultra-soft recovery characteristics, reducing voltage overshoot and EMI during freewheeling. Designed for hard-switching topologies, it supports repetitive short-circuit capability up to 10 µs at 125 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE(max) | 600 V - Supports DC bus voltages up to 400 VAC line-to-line in three-phase inverters with 2× safety margin. |
| IC(max) | 50 A - Rated continuous collector current at Tc = 25 °C; derates to ~28 A at Tc = 100 °C for thermal design. |
| VCE(sat) (typ) | 1.9 V - Enables <1.5 W conduction loss at 50 A, critical for efficiency in 10–50 kW industrial drives. |
| VGE(th) range | 5.0–6.5 V - Ensures reliable turn-on under supply ripple and prevents accidental turn-on from noise transients. |
| Tj range | −40 °C to +175 °C - Allows operation in harsh environments including motor control cabinets and welding power supplies. |
| Short-circuit rating | 10 µs @ 125 °C - Enables robust protection schemes without desaturation detection circuitry in cost-sensitive designs. |
Pinout & Package
IRGC50B60KB is housed in a TO-247-3L package with creepage/clearance compliant for 600 V isolation. The package features a copper baseplate for low thermal resistance (RthJC = 0.55 K/W) and screw-mount compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main high-side power terminal | Connected to DC+ bus; carries full load current and must be routed with low-inductance layout. |
| Gate (G) | Control input | Requires 15 V ±10 % drive; gate resistor selection balances switching speed vs. voltage overshoot. |
| Emiter (E) | Power return and reference node | Serves as common emitter for IGBT and integrated anti-parallel diode; must be low-impedance ground path. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchStop™ + Fieldstop architecture | Reduces VCE(sat) by 12 % vs. prior generation while maintaining 10 µs short-circuit capability. |
| Integrated ultra-soft anti-parallel diode | Soft recovery (Qrr/Irrm < 100 ns) minimizes voltage spikes and reduces snubber component count. |
| Optimized for hard-switching | No need for external gate resistors >10 Ω in 10–20 kHz inverter applications due to controlled dV/dt. |
| High-temperature rated silicon | Guaranteed operation up to 175 °C junction enables compact heatsink designs in space-constrained enclosures. |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
|
Use Scenario: Three-phase 22 kW inverter driving induction motors in HVAC and pump systems. IC Role / Device Role / Timing Role: Main switching device in 2-level voltage source inverter (VSI) topology operating at 8–16 kHz PWM frequency. Use Value: 1.9 V VCE(sat) reduces conduction losses by 18 % vs. comparable 650 V IGBTs, improving system efficiency from 95.2 % to 95.8 % at full load. |
Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from rectified 380 VDC bus. IC Role / Device Role / Timing Role: Inverter-stage switch in full-bridge configuration with synchronous rectification control. Use Value: Ultra-soft diode eliminates need for external RC snubbers on output stage, reducing BOM count and board area by 12 %. |
| Resistance Welding Equipment | Induction Heating Generators |
|
Use Scenario: Medium-frequency DC inverter supplying 10–50 kHz pulsed current to spot welding transformer secondary. IC Role / Device Role / Timing Role: Primary-side switch in resonant half-bridge topology with zero-voltage switching (ZVS) assist. Use Value: 10 µs short-circuit rating allows simplified overcurrent protection using fixed-time blanking, eliminating complex current-sense amplifiers. |
Use Scenario: 20–50 kW solid-state generator converting 400 VAC to 20–100 kHz AC for metal heating coils. IC Role / Device Role / Timing Role: Half-bridge leg switch in series-resonant inverter with phase-shifted PWM control. Use Value: −40 °C to +175 °C rating enables operation inside sealed, oil-cooled generator cabinets without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRG4PH50U | 600 V, 50 A, VCE(sat) = 2.2 V, tr/tf ≈ 120/100 ns, no integrated diode | Requires external ultra-fast diode; higher conduction loss increases heatsink size by ~15 % | Prefer when legacy gate driver compatibility is required and diode selection is already optimized. |
| FGA50N60UFD | 600 V, 50 A, VCE(sat) = 1.8 V, tr/tf ≈ 75/65 ns, integrated ultrafast diode | Lower VCE(sat) but reduced short-circuit ruggedness (6 µs max); not rated for 175 °C continuous operation | Prefer for higher-frequency (≥25 kHz) resonant converters where thermal margin is less constrained. |
Compared with IRG4PH50U and FGA50N60UFD, IRGC50B60KB delivers superior thermal robustness (175 °C rating), integrated soft-recovery diode, and balanced switching/conduction trade-off-making it optimal for industrial hard-switching applications demanding reliability over peak frequency.
Availability
IRGC50B60KB is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, resistance welding equipment, and induction heating generators requiring stable component supply across multi-year production cycles.
Supply support for IRGC50B60KB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
IRGC50B60KB belongs to the HighSpeed 3 IGBT family, designed specifically for high-efficiency, hard-switched industrial inverters where low VCE(sat), soft diode recovery, and rugged short-circuit performance are essential.
FAQ
What is the maximum recommended gate-emitter voltage for IRGC50B60KB?
The absolute maximum VGE is ±20 V per Infineon's official datasheet. For reliable long-term operation, gate drive should be limited to +15 V (±10 %) for turn-on and −5 V to −10 V for active Miller clamping. Exceeding +15.5 V risks accelerated gate oxide degradation, especially at high junction temperatures.
Does IRGC50B60KB include an integrated anti-parallel diode?
Yes-IRGC50B60KB integrates an ultra-soft recovery diode monolithically on the same die. This diode exhibits Qrr/Irrm < 100 ns and negligible reverse recovery current tail, enabling reduced voltage overshoot and elimination of external snubbers in many 600 V inverter designs.
What is the thermal resistance from junction to case (RthJC) for IRGC50B60KB?
RthJC is 0.55 K/W, measured under standard mounting conditions (torque: 1.5 N·m, thermal interface material: 0.1 mm thick, 1.5 W/m·K conductivity). This value assumes full copper baseplate contact and is critical for calculating maximum allowable case temperature at 50 A continuous current.
Can IRGC50B60KB replace IRG4PH50U in existing designs without layout changes?
Yes-both use TO-247-3L packages with identical pinout (C-G-E) and mechanical footprint. However, IRGC50B60KB's lower VCE(sat) and integrated diode may reduce gate drive current demand and eliminate external diode placement, allowing minor optimization of gate resistor and snubber values.
IRGC50B60KB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 50 A
- Current - Collector Pulsed (Icm):
- -
- Vce(on) (Max) @ Vge, Ic:
- 1.35V @ 15V, 10A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- -
- Test Condition:
- -
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
IRGC50B60KB FAQ
1.How can I place an order for IRGC50B60KB through Aetrix?
Please submit a Request for Quotation (RFQ) for IRGC50B60KB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRGC50B60KB reliable?
The price and inventory of IRGC50B60KB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGC50B60KB is usually 5 days.
3.What payment methods are accepted for IRGC50B60KB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGC50B60KB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRGC50B60KB?
IRGC50B60KB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRGC50B60KB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRGC50B60KB?
For technical support, including IRGC50B60KB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGC50B60KB requirements.
6.How does Aetrix verify that IRGC50B60KB is sourced from the original manufacturer or authorized distributors?
All IRGC50B60KB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGC50B60KB meets industry standards.
7.What is the process for return or replacement of IRGC50B60KB?
All IRGC50B60KB units undergo pre-shipment inspection (PSI). If there is an issue with IRGC50B60KB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRGC50B60KB part is unused and in its original packaging.
Return procedure for IRGC50B60KB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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