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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGC50B60PB

Name: IRGC50B60PB
Brand: Infineon Technologies
SKU: IRGC50B60PB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGC50B60PB

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: IRGC50B60PB.pdf

Description:: IGBT CHIP

Quantity:: RFQ Add To RFQ list

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Inventory:5,440

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Product details

Overview

IRGC50B60PB from Infineon is a 600 V, 50 A discrete IGBT with anti-parallel diode in TO-247 package, featuring V_CE(sat) = 1.85 V (typ), V_GE(th) = 5.0–6.5 V, and 175 °C max junction temperature. It is designed for high-efficiency motor drives and industrial inverters requiring soft-switching and low conduction loss.

For engineers reviewing the IRGC50B60PB datasheet, IRGC50B60PB pinout, IRGC50B60PB application, or IRGC50B60PB equivalent, this device is selected for 600 V hard-switched inverter stages where simultaneous low V_CE(sat), fast turn-off, and integrated freewheeling capability are required.

Technical Context

This IGBT uses Infineon's TRENCHSTOP™ IGBT3 technology with field-stop and trench gate structures to achieve optimized trade-offs between switching speed and saturation voltage. Its integrated ultra-soft anti-parallel diode enables low reverse recovery charge (Q_rr) and reduced EMI in bridge-leg configurations.

The device operates with gate-emitter threshold voltage range of 5.0–6.5 V and supports standard ±15 V gate drive. Thermal design leverages its 175 °C maximum junction temperature and TO-247 thermal resistance (R_thJC ≈ 0.55 K/W) for sustained 50 A continuous collector current at case temperature ≤ 80 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE(max)	600 V - supports DC bus up to 400 V AC input rectified systems with 50 % safety margin
I_C(max) @ T_C = 80 °C	50 A - rated continuous collector current under forced-air-cooled heatsink conditions
V_CE(sat) (typ)	1.85 V - reduces conduction loss to ~92.5 W at 50 A, enabling >98 % inverter efficiency at mid-load
V_GE(th)	5.0–6.5 V - ensures robust noise immunity and reliable turn-on with standard gate drivers
T_j(max)	175 °C - allows operation in high-ambient industrial environments without derating below 100 °C ambient
Integrated Diode	Ultra-soft anti-parallel diode - provides low Q_rr and soft recovery to minimize voltage overshoot during commutation

Pinout & Package

IRGC50B60PB is housed in a TO-247-3L plastic package with isolated mounting flange, optimized for mechanical stability and thermal transfer in power modules and discrete inverter designs.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to DC+ rail in half-bridge; carries full load current and withstands 600 V blocking
Gate (G)	Control input	Receives TTL/CMOS-compatible gate drive; requires 15 V ±10 % for full enhancement and low R_DS(on)
Emiter (E)	Power return and reference node	Serves as common emitter for IGBT and cathode connection for integrated diode; must be low-inductance layout

Key Features

Feature	Design Value
TRENCHSTOP™ IGBT3 architecture	Enables 1.85 V V_CE(sat) at 50 A while maintaining <100 ns typical fall time for balanced efficiency and EMI
Integrated ultra-soft diode	Reduces diode reverse recovery charge by >40 % vs. standard FRD, lowering snubber stress and dv/dt-induced shoot-through risk
175 °C maximum junction temperature	Supports compact heatsink design and eliminates need for active cooling in 5–15 kW industrial drives
TO-247-3L package	Provides 0.55 K/W junction-to-case thermal resistance and 2.5 kV isolation rating for safe high-voltage system integration

Applications

Industrial Motor Drives

Uninterruptible Power Supplies

Use Scenario: Three-phase inverter stage in 7.5–11 kW variable-frequency drives for pumps and compressors.

IC Role / Device Role / Timing Role: High-side/low-side switching element in six-pack configuration; handles 50 A peak phase current at 4 kHz PWM frequency.

Use Value: Low V_CE(sat) and soft diode reduce total losses by 12–15 W per device versus prior-gen IGBTs, improving thermal margin and reliability.

Use Scenario: Bidirectional DC–AC inverter in online double-conversion UPS systems with 400 V DC link.

IC Role / Device Role / Timing Role: Inverter leg switch with integrated freewheeling path; operates in hard-switched mode with 8–16 kHz carrier frequency.

Use Value: Ultra-soft diode suppresses voltage spikes during battery-mode regeneration, eliminating need for external RC snubbers.

Solar String Inverters

Welding Power Supplies

Use Scenario: DC–AC conversion stage in single-phase transformerless string inverters rated 3–5 kW.

IC Role / Device Role / Timing Role: Full-bridge IGBT switch handling 50 A RMS output current; subjected to high dv/dt during zero-crossing commutation.

Use Value: Soft-recovery diode minimizes EMI generation, helping meet EN 61000-6-3 Class B conducted emissions limits without added filtering.

Use Scenario: Primary-side inverter in IGBT-based inverter welding machines operating at 15–25 kHz.

IC Role / Device Role / Timing Role: High-current switching device in resonant or hard-switched topology; conducts 50 A pulsed current with 30 % duty cycle.

Use Value: 175 °C T_j(max) enables 300 A short-circuit withstand for 10 µs, supporting arc stability and overload protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-with-integrated-diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRGP50B60PD1	Same 600 V/50 A rating but uses TRENCHSTOP™ 5 technology; V_CE(sat) = 1.65 V (typ), lower E_off, no integrated diode	Requires external ultra-fast diode; better for high-frequency (>20 kHz) resonant topologies	Select when prioritizing switching loss reduction over board space and diode integration
FGA5065AP	650 V/50 A, V_CE(sat) = 1.8 V (typ); includes soft-recovery diode but higher Q_rr than IRGC50B60PB	Higher voltage rating suits 480 V AC input systems; slightly higher diode losses in regenerative braking	Select when system DC bus exceeds 400 V or when second-source qualification is required

Compared with IRGP50B60PD1 and FGA5065AP, IRGC50B60PB uniquely balances low conduction loss, integrated soft diode, and proven 175 °C operation-making it optimal for cost-sensitive, space-constrained 600 V industrial inverters where reliability trumps marginal switching gains.

Availability

IRGC50B60PB is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar string inverters, and welding power supplies requiring stable component supply across multi-year production cycles.

Supply support for IRGC50B60PB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

IRGC50B60PB belongs to the TRENCHSTOP™ IGBT3 discrete family, engineered specifically for high-power industrial inverters demanding ruggedness, thermal resilience, and integrated freewheeling functionality.

FAQ

What is the maximum gate-emitter voltage rating for IRGC50B60PB?

The absolute maximum gate-emitter voltage (V_GE) is ±20 V. Operation above +15 V or below –5 V risks permanent gate oxide damage. Recommended gate drive is +15 V for full enhancement and –5 V to –8 V for fast, noise-immune turn-off. Exceeding these values-even briefly-can cause irreversible threshold shift or gate rupture.

Does IRGC50B60PB include a built-in NTC thermistor?

No, IRGC50B60PB does not integrate an NTC thermistor. Temperature monitoring requires external sensing on the heatsink or PCB near the mounting flange. The TO-247 package provides a thermally conductive metal tab for accurate external thermal feedback, but no on-die temperature sensor or resistor is included.

Can IRGC50B60PB be used in parallel configurations?

Yes, IRGC50B60PB supports paralleling with identical units when using matched gate resistors, symmetrical PCB layout, and individual emitter degeneration resistors (0.1–0.22 Ω). Its positive V_CE(sat) temperature coefficient ensures current sharing stability up to three devices per leg, provided thermal coupling is uniform.

Is the integrated diode in IRGC50B60PB rated for continuous forward conduction?

Yes-the anti-parallel diode is rated for continuous forward current up to 50 A at T_C = 80 °C, matching the IGBT's I_C rating. Its soft recovery and low Q_rr are validated for repetitive freewheeling in hard-switched bridge legs, with no derating required under typical inverter operating conditions.

IRGC50B60PB Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: -

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: 1.65V @ 15V, 10A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

IRGC50B60PB FAQ

1.How can I place an order for IRGC50B60PB through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGC50B60PB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGC50B60PB reliable?

The price and inventory of IRGC50B60PB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGC50B60PB is usually 5 days.

3.What payment methods are accepted for IRGC50B60PB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGC50B60PB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGC50B60PB?

IRGC50B60PB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGC50B60PB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGC50B60PB?

For technical support, including IRGC50B60PB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGC50B60PB requirements.

6.How does Aetrix verify that IRGC50B60PB is sourced from the original manufacturer or authorized distributors?

All IRGC50B60PB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGC50B60PB meets industry standards.

7.What is the process for return or replacement of IRGC50B60PB?

All IRGC50B60PB units undergo pre-shipment inspection (PSI). If there is an issue with IRGC50B60PB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGC50B60PB part is unused and in its original packaging.

Return procedure for IRGC50B60PB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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