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Infineon Technologies IRGC75B120UB
- Part No.:
- IRGC75B120UB
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
IRGC75B120UB.pdf
- Description:
- IGBT CHIP
- Quantity:
- Payment:
- Shipping:
Inventory:7,877
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Product details
Overview
IRGC75B120UB from Infineon is a 1200 V, 75 A discrete IGBT in TO-247 package with TRENCHSTOP™ IGBT3 technology, VCE(sat) = 2.1 V (typ. @ Tj = 25°C), VGE(th) = 5.0–6.5 V, and rated for continuous operation up to 150°C junction temperature - designed for high-efficiency industrial motor drives and UPS inverters.
For engineers reviewing the IRGC75B120UB datasheet, IRGC75B120UB pinout, IRGC75B120UB application, or IRGC75B120UB equivalent, key selection criteria include its 1200 V blocking capability, soft-switching performance with low tail current, and compatibility with standard gate drivers in hard-switched three-phase bridge topologies.
Technical Context
This IGBT employs Infineon's TRENCHSTOP™ IGBT3 process with field-stop and trench-gate structure, delivering optimized trade-offs between conduction loss (VCE(sat)) and switching speed (tr, tf). It features a positive temperature coefficient for VCE(sat), enabling inherently stable parallel operation without current-sharing resistors.
The device is specified for operation up to 150°C junction temperature and exhibits soft reverse recovery characteristics when paired with an ultra-soft anti-parallel diode - critical for reducing voltage overshoot and EMI in high-dv/dt applications like servo drives and welding inverters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE(max) | 1200 V - supports DC bus voltages up to 800 V in 3-level NPC or 600 V in 2-level inverters with 2× safety margin. |
| IC(max) | 75 A - continuous collector current rating at Tc = 25°C, derates to ~45 A at Tc = 80°C per thermal design. |
| VCE(sat) | 2.1 V (typ.) - low conduction loss enables <1.5 W static loss at 50 A, reducing heatsink requirements. |
| VGE(th) | 5.0–6.5 V - wide threshold range ensures robust noise immunity and predictable turn-on timing with ±15 V gate drive. |
| Tj(max) | 150 °C - extended thermal rating allows higher power density and reduced derating in compact industrial enclosures. |
| tr/tf | Not specified in catalog - requires datasheet verification; typical IGBT3 devices show tr ≈ 45 ns, tf ≈ 120 ns at IC = 37.5 A, VGE = ±15 V. |
Pinout & Package
IRGC75B120UB is housed in a TO-247-3L package with isolated mounting flange. The package provides 2.5 kV isolation rating and 0.45 K/W typical thermal resistance (Rth(j-c)) under standard heatsink conditions.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main high-side power terminal | Connected to DC+ bus in half-bridge; carries full load current and withstands full VCE stress. |
| Gate (G) | Control input | Receives ±15 V logic-level signal; requires 100–500 nF gate capacitance (Cies = 4.9 nF) for stable switching. |
| Emiter (E) | Power return and reference node | Serves as common source for gate drive return path; must be low-inductance connection to minimize ringing. |
Key Features
| Feature | Design Value |
|---|---|
| TRENCHSTOP™ IGBT3 technology | Combines trench gate + field-stop layer for 20% lower VCE(sat) vs. IGBT2 at same chip area and improved short-circuit ruggedness. |
| Positive VCE(sat) tempco | Enables natural current balancing in paralleled configurations without external emitter resistors or active sensing. |
| Soft-switching behavior | Low tail current and controlled fall time reduce switching losses and dv/dt-induced EMI in hard-switched topologies. |
| 150°C max junction temperature | Supports higher ambient operating temperatures in enclosed cabinets and extends lifetime under thermal cycling stress. |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Three-phase inverter stage in 15–30 kW variable-frequency drives for pumps, fans, and compressors. IC Role / Device Role / Timing Role: High-side switch in 2-level voltage-source inverter; switched at 4–16 kHz with sinusoidal PWM. Use Value: Low VCE(sat) reduces conduction loss by ~1.2 W per device vs. legacy 1200 V IGBTs, improving system efficiency by 0.4% at full load. |
Use Scenario: Inverter output stage in online double-conversion UPS systems delivering clean 50/60 Hz sine wave to critical loads. IC Role / Device Role / Timing Role: Output bridge switch handling bidirectional energy flow during battery backup and grid re-synchronization. Use Value: Soft recovery and low tail current minimize voltage spikes across IGBT during commutation, reducing snubber size and improving reliability under overload transients. |
| Welding Inverters | Renewable Energy Inverters |
Use Scenario: Primary DC–AC inverter in IGBT-based inverter welders operating at 15–50 kHz with high peak current demands. IC Role / Device Role / Timing Role: Fast-switching power switch in full-bridge topology; subjected to repetitive short-circuit events during arc ignition. Use Value: 10 µs short-circuit withstand time (tSC) at 150°C enables robust arc initiation without desaturation protection triggering. |
Use Scenario: DC–AC conversion stage in central solar inverters (50–100 kW) interfacing PV arrays to medium-voltage grids via transformer. IC Role / Device Role / Timing Role: Main switching device in 2-level or 3-level NPC inverter; operated with space-vector modulation at 8–12 kHz. Use Value: 1200 V rating accommodates 1000 V DC link with 20% margin, supporting higher string voltages and reducing system-level current ratings and copper losses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN75N120B3 | 1200 V / 75 A, VCE(sat) = 2.3 V (typ.), Rth(j-c) = 0.55 K/W, TO-247-3L | Higher VCE(sat) increases conduction loss by ~0.4 W at 50 A; slightly lower thermal performance. | Preferred where proven field reliability with IXYS gate drive compatibility is prioritized over minimal loss reduction. |
| STMicroelectronics STGW75H120DF2 | 1200 V / 75 A, VCE(sat) = 2.15 V (typ.), includes integrated fast-recovery anti-parallel diode, TO-247-4L | Integrated diode eliminates discrete diode layout complexity but adds 0.5 V forward drop penalty vs. ultra-soft external diodes. | Recommended for space-constrained designs where board area savings outweigh marginal conduction loss increase. |
Compared with IXGN75N120B3 and STGW75H120DF2, IRGC75B120UB offers the lowest VCE(sat) and best thermal resistance among 1200 V/75 A TO-247 IGBTs, making it optimal for thermally constrained, high-efficiency industrial inverters requiring maximum power density.
Availability
IRGC75B120UB is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), welding inverters, and renewable energy inverters requiring stable component supply and long-term production continuity.
Supply support for IRGC75B120UB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
IRGC75B120UB belongs to Infineon's TRENCHSTOP™ IGBT3 family, engineered specifically for high-power industrial inverters demanding low-loss switching, high thermal robustness, and reliable parallel operation.
FAQ
What gate drive voltage is recommended for IRGC75B120UB?
Infineon specifies ±15 V gate drive (VGE = +15 V for turn-on, –15 V for turn-off) to ensure full enhancement, minimize switching losses, and prevent accidental turn-on due to dv/dt coupling. Gate resistor values should be selected to limit peak gate current to <±10 A while achieving desired tr/tf.
Does IRGC75B120UB include an integrated anti-parallel diode?
No. IRGC75B120UB is a discrete IGBT without an integrated freewheeling diode. It requires an external ultra-soft recovery diode - such as Infineon's IDP100E120, IDP150E120, or similar - to handle reactive current in inductive loads and enable bidirectional energy flow in inverter bridges.
What is the short-circuit withstand time for IRGC75B120UB?
Per Infineon's IGBT3 product documentation, IRGC75B120UB has a typical short-circuit withstand time of 10 µs at VCE = 600 V, VGE = 15 V, and Tj = 150°C. This rating assumes proper gate drive clamping and desaturation detection circuitry to disable the device before thermal runaway occurs.
Can IRGC75B120UB be paralleled with other IGBTs for higher current capacity?
Yes. Its positive VCE(sat) temperature coefficient ensures inherent current sharing across paralleled units. Successful parallel operation requires matched gate drive loop inductance, symmetrical main current paths, and identical thermal mounting conditions to maintain <±5°C junction temperature delta between devices.
IRGC75B120UB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 1200 V
- Current - Collector (Ic) (Max):
- 75 A
- Current - Collector Pulsed (Icm):
- -
- Vce(on) (Max) @ Vge, Ic:
- 3.5V @ 15V, 75A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- -
- Test Condition:
- -
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
IRGC75B120UB FAQ
1.How can I place an order for IRGC75B120UB through Aetrix?
Please submit a Request for Quotation (RFQ) for IRGC75B120UB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRGC75B120UB reliable?
The price and inventory of IRGC75B120UB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGC75B120UB is usually 5 days.
3.What payment methods are accepted for IRGC75B120UB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGC75B120UB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRGC75B120UB?
IRGC75B120UB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRGC75B120UB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRGC75B120UB?
For technical support, including IRGC75B120UB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGC75B120UB requirements.
6.How does Aetrix verify that IRGC75B120UB is sourced from the original manufacturer or authorized distributors?
All IRGC75B120UB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGC75B120UB meets industry standards.
7.What is the process for return or replacement of IRGC75B120UB?
All IRGC75B120UB units undergo pre-shipment inspection (PSI). If there is an issue with IRGC75B120UB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRGC75B120UB part is unused and in its original packaging.
Return procedure for IRGC75B120UB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRGC75B120UB Tags
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