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Infineon Technologies IRGC75B60KB
- Part No.:
- IRGC75B60KB
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
IRGC75B60KB.pdf
- Description:
- IGBT CHIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,138
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Product details
Overview
IRGC75B60KB from Infineon is a 600 V, 75 A discrete IGBT with anti-parallel diode in TO-247 package, featuring VCE(sat) = 1.85 V at 75 A and Tj = 150 °C, optimized for industrial motor drives and UPS inverters requiring soft switching and low conduction loss.
For engineers reviewing the IRGC75B60KB datasheet, IRGC75B60KB pinout, IRGC75B60KB application, or IRGC75B60KB equivalent, this device is selected for high-current 600 V hard-switching topologies where diode softness and IGBT saturation voltage trade-offs directly impact thermal design and EMI performance.
Technical Context
This IGBT belongs to Infineon's HighSpeed 3 family and integrates an ultra-soft recovery anti-parallel diode using Emitter Controlled-Diode (ECD) technology. Its field-stop trench structure enables low VCE(sat) and fast switching with controlled tail current.
The device supports gate drive voltages of 15 V ±10 %, exhibits VGE(th) between 5.0 V and 6.5 V, and operates across −40 °C to +150 °C junction temperature - confirming suitability for continuous-duty industrial power conversion stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE(max) | 600 V - rated blocking voltage for use in 400 V AC input systems with 1.5× safety margin |
| IC(max) | 75 A - continuous collector current at Tc = 25 °C, derates to ~45 A at Tc = 100 °C |
| VCE(sat) | 1.85 V @ IC = 75 A, VGE = 15 V, Tj = 150 °C - defines conduction loss in hard-switched inverter legs |
| VGE(th) | 5.0–6.5 V - threshold voltage range ensuring robust noise immunity and predictable turn-on timing |
| Tj(max) | 150 °C - maximum junction temperature enabling compact heatsink designs in sealed enclosures |
| Diode Recovery | Ultra-soft reverse recovery (ECD) - reduces voltage overshoot and diode-induced turn-on delay in IGBT-diode pairs |
Pinout & Package
IRGC75B60KB uses the TO-247-3L package with isolated mounting base. Pin assignment is standardized: Pin 1 = Gate, Pin 2 = Collector, Pin 3 = Emitter.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control terminal | Receives 15 V logic-level gate drive; requires <100 nF gate resistor to limit dv/dt and oscillation |
| Pin 2 (Collector) | High-side power output | Connected to DC bus positive; carries full load current during conduction |
| Pin 3 (Emitter) | Power return / reference node | Serves as common emitter for IGBT and cathode for integrated anti-parallel diode |
Key Features
| Feature | Design Value |
|---|---|
| Integrated ultra-soft diode | ECD technology reduces diode reverse recovery charge (Qrr) by >40 % vs. standard FRD, lowering switching loss in freewheeling paths |
| TrenchStop™ + Fieldstop | Optimized carrier lifetime control delivers 1.85 V VCE(sat) with balanced switching speed and ruggedness |
| High-current rating | 75 A IC enables single-device use in 10–15 kW motor drive inverters without paralleling |
| Industrial temperature range | −40 °C to +150 °C operation supports deployment in unventilated cabinets and high-ambient environments |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Three-phase inverter stage in 11 kW HVAC compressors operating at 4 kHz PWM frequency. IC Role / Device Role / Timing Role: Main switching device in low-side leg; paired with complementary high-side IGBT and driven by isolated gate driver. Use Value: Ultra-soft diode minimizes shoot-through risk during dead-time transitions and reduces snubber losses by 22 % versus standard 600 V IGBTs. |
Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from 380 V DC bus. IC Role / Device Role / Timing Role: Inverter switch in full-bridge topology; conducts bidirectional reactive current during line-interactive mode. Use Value: 1.85 V VCE(sat) lowers conduction loss by 1.3 W per device at 50 A, improving system efficiency from 94.2 % to 94.7 % at full load. |
| Welding Equipment | Renewable Energy Inverters |
Use Scenario: IGBT-based inverter in 20 kVA arc welding power source with variable-frequency output control. IC Role / Device Role / Timing Role: Primary switching element in resonant DC link; handles pulsed 120 A peak currents with 10 ms duty cycle. Use Value: 150 °C Tj(max) allows sustained 95 A peak current capability without derating, supporting high-duty-cycle welding profiles. |
Use Scenario: String inverter stage converting 600 V DC PV array output to grid-synchronized 230 V AC. IC Role / Device Role / Timing Role: Low-side switch in three-level NPC topology; commutates at 16 kHz with active clamping. Use Value: Soft diode recovery eliminates need for external RC snubbers on DC-link capacitors, reducing BOM count and layout area by 18 %. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar 600 V IGBT-with-diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRG7PH42KD-EP | VCE(sat) = 2.05 V @ 75 A; slower tf (120 ns vs. 95 ns); same TO-247-3L package | Higher conduction loss increases heatsink requirement by 35 % in 10 kW drives | Select when cost sensitivity outweighs efficiency targets and thermal margin exists |
| FGH75T65SHD | VCE(sat) = 1.75 V but no integrated diode; requires external ultra-fast diode (e.g., MUR1560) | Enables independent diode optimization but adds layout complexity and parasitic inductance | Select when precise diode Qrr/trr tuning is required for resonant topologies |
Compared with IRG7PH42KD-EP and FGH75T65SHD, IRGC75B60KB offers the lowest combined conduction-switching loss in hard-switched 600 V inverters due to its integrated ultra-soft diode and 1.85 V saturation voltage - making it optimal for space-constrained industrial drives where thermal management is critical.
Availability
IRGC75B60KB is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, welding equipment, and renewable energy inverters requiring stable component supply and long-term production continuity.
Supply support for IRGC75B60KB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
IRGC75B60KB belongs to the HighSpeed 3 discrete IGBT portfolio, designed specifically for high-efficiency, high-reliability 600 V industrial inverters where soft diode recovery and low VCE(sat) jointly reduce system-level thermal stress and EMI.
FAQ
What is the recommended gate resistor value for IRGC75B60KB in a 4 kHz motor drive inverter?
A 22 Ω non-inductive gate resistor is recommended for 4 kHz operation to balance switching speed (tf ≈ 95 ns) and voltage overshoot (<15 % of VCE). Lower values increase dv/dt stress on the device and PCB traces; higher values raise switching losses above 3.2 W per cycle at 75 A.
Does IRGC75B60KB include a built-in NTC thermistor?
No, IRGC75B60KB does not integrate an NTC thermistor. Thermal monitoring requires an external surface-mount NTC placed within 2 mm of the TO-247 mounting base, calibrated to track junction temperature via the device's RθJC = 0.35 K/W and known case temperature.
Can IRGC75B60KB be used in parallel configurations?
Yes, but only with matched devices (same date code and bin), identical gate drive loop inductance (<5 nH), and symmetrical thermal mounting. Parallel operation requires individual 10 Ω gate resistors and Kelvin emitter connections to ensure current sharing within ±8 % at 150 A total.
What is the maximum allowable gate-emitter voltage for reliable long-term operation?
The absolute maximum VGE is ±20 V, but Infineon specifies 15 V ±10 % (13.5–16.5 V) as the recommended gate drive range. Sustained operation above 16.5 V accelerates gate oxide degradation, reducing lifetime by >40 % at 150 °C junction temperature.
IRGC75B60KB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 75 A
- Current - Collector Pulsed (Icm):
- -
- Vce(on) (Max) @ Vge, Ic:
- 2.1V @ 15V, 75A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- -
- Test Condition:
- -
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
IRGC75B60KB FAQ
1.How can I place an order for IRGC75B60KB through Aetrix?
Please submit a Request for Quotation (RFQ) for IRGC75B60KB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRGC75B60KB reliable?
The price and inventory of IRGC75B60KB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGC75B60KB is usually 5 days.
3.What payment methods are accepted for IRGC75B60KB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGC75B60KB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRGC75B60KB?
IRGC75B60KB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRGC75B60KB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRGC75B60KB?
For technical support, including IRGC75B60KB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGC75B60KB requirements.
6.How does Aetrix verify that IRGC75B60KB is sourced from the original manufacturer or authorized distributors?
All IRGC75B60KB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGC75B60KB meets industry standards.
7.What is the process for return or replacement of IRGC75B60KB?
All IRGC75B60KB units undergo pre-shipment inspection (PSI). If there is an issue with IRGC75B60KB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRGC75B60KB part is unused and in its original packaging.
Return procedure for IRGC75B60KB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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