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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGIB4640DPBF

Name: IRGIB4640DPBF
Brand: Infineon Technologies
SKU: IRGIB4640DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGIB4640DPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-220-3

Datasheet:: IRGIB4640DPBF.pdf

Description:: IGBT 600V 65A 250W TO220

Quantity:: RFQ Add To RFQ list

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Inventory:7,852

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Product details

Overview

IRGIB4640DPBF from Infineon Technologies (formerly International Rectifier) is a 600 V, 40 A (T_C = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery diode in TO-247AC package. It delivers 1.60 V typical V_CE(on) at 24 A/15 V_GE, supports 5 µs short-circuit SOA, and operates up to 175°C junction temperature - designed for high-efficiency industrial motor drives and UPS inverters.

For engineers reviewing the IRGIB4640DPBF datasheet, IRGIB4640DPBF pinout, IRGIB4640DPBF application, or IRGIB4640DPBF equivalent, key selection criteria include its square RBSOA at 175°C, ±20 V gate rating, 0.60 °C/W IGBT R_θJC, clamped inductive load current of 96 A, and diode reverse recovery time of 89 ns at 175°C.

Technical Context

This IGBT employs a trench-gate field-stop structure optimized for low conduction and switching losses in hard-switched 400–600 V DC bus applications. Its positive V_CE(on) temperature coefficient enables stable parallel operation, while the monolithically integrated diode features soft recovery with 621 µJ E_rec and 37 A peak reverse recovery current (I_rr) at TJ = 175°C.

The device is characterized for robustness under transient stress: it sustains 5 µs short-circuit events at V_CC = 400 V with V_GE = 15 V, and exhibits full-square reverse bias SOA up to 96 A at V_CC = 480 V and T_J = 175°C - critical for fault-tolerant inverter leg design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - maximum blocking voltage for 400–600 V DC bus inverters
I_C @ T_C = 100°C	40 A - continuous collector current derated for heatsink-limited thermal design
V_CE(on) typ.	1.60 V @ I_C = 24 A, V_GE = 15 V, T_J = 25°C - low conduction loss enabling >98% inverter efficiency
t_SC SOA	5 µs - enables hardware-level short-circuit protection without external desaturation detection
R_θJC (IGBT)	0.60 °C/W - thermal resistance from junction to case, defining minimum heatsink requirement
t_rr	89 ns @ I_F = 24 A, T_J = 175°C - fast, soft diode recovery minimizing voltage overshoot and EMI
E_off typ.	700 µJ @ I_C = 24 A, V_CC = 400 V, R_G = 10 Ω - quantifies turn-off energy for snubber and gate driver sizing

Pinout & Package

IRGIB4640DPBF uses the TO-247AC package - a 3-lead, through-hole power package with isolated mounting hole, rated for 10 lbf·in (1.1 N·m) screw torque and 300°C soldering tolerance at 1.6 mm from case.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power output terminal	Connected to DC+ bus in half-bridge; carries full load current and withstands 600 V blocking
Gate (G)	Control input for IGBT channel	Requires ±20 V absolute max drive; 50 nC total gate charge dictates gate driver current capability
Emitter (E)	Power return and reference node	Serves as common source for IGBT and diode; must be low-inductance path to minimize switching oscillation

Key Features

Feature	Design Value
Ultrafast soft-recovery diode	89 ns t_rr, 37 A I_rr, and 621 µJ E_rec at 175°C reduce snubber losses and EMI in freewheeling paths
Square RBSOA at 175°C	Supports 96 A at 480 V with no second breakdown - enables reliable operation under overvoltage transients
Positive V_CE(on) tempco	Enables natural current sharing in paralleled IGBTs without external emitter resistors
5 µs short-circuit SOA	Allows fixed-time desaturation protection schemes without complex sensing circuitry
Lead-free & RoHS compliant	Meets environmental compliance for industrial and UPS equipment sold globally

Applications

Industrial Motor Drive

Inverter Systems

Use Scenario: Three-phase variable-frequency drive for 7.5–15 kW AC induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: High-side switch in six-pack inverter module, operating at 4–16 kHz PWM with 400 V DC bus.

Use Value: Low V_CE(on) and soft diode reduce conduction and commutation losses, improving system efficiency by ≥1.2% versus prior-generation IGBTs.

Use Scenario: Grid-tied solar inverter DC–AC stage with unidirectional power flow and reactive power support.

IC Role / Device Role / Timing Role: Upper-leg IGBT in H-bridge topology, switching at 12–18 kHz with active clamp control.

Use Value: 5 µs SC-SOA and square RBSOA ensure robustness against grid faults and line surges without derating.

Uninterruptible Power Supply

Welding Equipment

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from 380–400 VDC battery bank.

IC Role / Device Role / Timing Role: Inverter-stage switch handling bidirectional power during battery backup and utility re-synchronization.

Use Value: Integrated diode with 89 ns t_rr minimizes reverse recovery spikes during zero-crossing transitions, reducing filter capacitor stress.

Use Scenario: IGBT-based inverter welder with 20–50 kHz switching for precise arc control in MIG/MAG processes.

IC Role / Device Role / Timing Role: Primary switching device in resonant or hard-switched inverter output stage, driving step-down transformer primary.

Use Value: 175°C max junction temperature and 0.60 °C/W R_θJC allow compact heatsinking in space-constrained portable welders.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN60N60A4	600 V / 60 A, higher I_C rating but 2.1 V V_CE(on); TO-247AD package with insulated tab	Higher current capacity suits 22 kW motor drives; higher V_CE(on) increases conduction loss at partial load	Select when higher continuous current headroom is needed and thermal margin allows higher V_CE(on) penalty
STMicroelectronics STGW40H65DFB	650 V / 40 A, 1.85 V V_CE(on), 100 ns t_rr; built-in NTC thermistor	Higher voltage rating supports 600 V AC input rectified buses; slower diode increases E_rec by ~25%	Select when 650 V blocking margin is required or on-board temperature monitoring is preferred

Compared with IXGN60N60A4 and STGW40H65DFB, IRGIB4640DPBF offers the lowest V_CE(on) (1.60 V) and fastest diode (89 ns), making it optimal for efficiency-critical 400–600 V inverters where thermal headroom is constrained.

Availability

IRGIB4640DPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and welding equipment requiring stable component supply across multi-year production cycles.

Supply support for IRGIB4640DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This device belongs to Infineon's legacy High Voltage IGBT portfolio, engineered for rugged, high-efficiency switching in industrial inverters and motor controls operating at 400–600 V DC bus voltages.

FAQ

What is the maximum gate-emitter voltage rating for IRGIB4640DPBF?

The absolute maximum continuous gate-to-emitter voltage is ±20 V, with transient rating up to ±30 V. Exceeding ±20 V continuously risks oxide degradation and threshold shift; gate drivers must clamp to this limit using Zener diodes or active regulation.

Does IRGIB4640DPBF require a negative gate turn-off voltage?

No - it operates reliably with 0 V turn-off and +15 V turn-on. The device's positive V_CE(on) temperature coefficient and low Miller capacitance enable stable switching without negative bias, though –5 V to –10 V may improve noise immunity in high-dV/dt environments.

How does the integrated diode differ from standard FRD counterparts?

Its monolithic ultrafast soft-recovery diode achieves 89 ns t_rr and softness factor (t_a/t_b) > 1.2 at 175°C - significantly faster and softer than discrete FRDs in same package, reducing voltage overshoot and EMI without external snubbers.

Can IRGIB4640DPBF be paralleled with identical units?

Yes - its positive V_CE(on) temperature coefficient ensures natural current sharing. Successful paralleling requires matched gate drive impedance, symmetrical layout, and shared heatsink with <±1°C thermal gradient between devices to maintain balance within ±5% current mismatch.

IRGIB4640DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 65 A

Current - Collector Pulsed (Icm):: 72 A

Vce(on) (Max) @ Vge, Ic:: 1.9V @ 15V, 24A

Power - Max:: 250 W

Switching Energy:: 115µJ (on), 600µJ (off)

Input Type:: Standard

Gate Charge:: 75 nC

Td (on/off) @ 25°C:: 41ns/104ns

Test Condition:: 400V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr):: 89 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IRGIB4640DPBF FAQ

1.How can I place an order for IRGIB4640DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGIB4640DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGIB4640DPBF reliable?

The price and inventory of IRGIB4640DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGIB4640DPBF is usually 5 days.

3.What payment methods are accepted for IRGIB4640DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGIB4640DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGIB4640DPBF?

IRGIB4640DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGIB4640DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGIB4640DPBF?

For technical support, including IRGIB4640DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGIB4640DPBF requirements.

6.How does Aetrix verify that IRGIB4640DPBF is sourced from the original manufacturer or authorized distributors?

All IRGIB4640DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGIB4640DPBF meets industry standards.

7.What is the process for return or replacement of IRGIB4640DPBF?

All IRGIB4640DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGIB4640DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGIB4640DPBF part is unused and in its original packaging.

Return procedure for IRGIB4640DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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