Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRGP20B120U-EP

Part No.:
IRGP20B120U-EP
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIRGP20B120U-EP.pdf
Description:
IGBT NPT 1200V 40A TO247AD
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,204

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRGP20B120U-EP from Infineon Technologies is a non-punch-through (NPT) IGBT rated for 1200 V collector-emitter voltage, 40 A nominal collector current at 25°C, and features a TO-247AD package with extended creepage distance for enhanced isolation. It serves as a high-voltage switching device in industrial motor drives and UPS inverters where robust short-circuit withstand capability and low conduction losses are required.

For engineers reviewing the IRGP20B120U-EP datasheet, IRGP20B120U-EP pinout, IRGP20B120U-EP application, or IRGP20B120U-EP equivalent, key selection criteria include its 1200 V blocking rating, 40 A continuous current capability, 2.2 V typical VCE(sat) at 25°C, short-circuit ruggedness up to 10 µs, and suitability for hard-switched 600–800 V DC bus systems.

Technical Context

This IGBT employs an NPT silicon structure with field-stop layer design, enabling balanced trade-offs between switching speed and short-circuit robustness. Its gate threshold voltage is 5.0 V (min), and it supports gate drive voltages from –20 V to +20 V, ensuring reliable turn-on/turn-off under noisy industrial conditions.

The device integrates a co-packaged ultrafast soft-recovery anti-parallel diode with 40 A average forward current rating and 150 ns reverse recovery time. Its thermal resistance RthJC is 0.35 K/W, supporting operation up to TJ = 150°C with appropriate heatsinking.

Key Specifications

ParameterValue and Actual Design Meaning
VCES1200 V - Maximum blocking voltage before avalanche; enables use in 800 V DC-link systems with 50% safety margin.
IC (TC = 25°C)40 A - Continuous collector current rating at case temperature 25°C; derates to ~25 A at 100°C case.
VCE(sat) @ IC = 40 A2.2 V (typ) - Low saturation voltage reduces conduction loss in high-current motor drive legs.
tsc10 µs - Guaranteed short-circuit withstand time at VCE = 600 V, TJ = 150°C, enabling robust protection without desaturation circuitry.
Eoff1.2 mJ @ IC = 40 A, VCE = 600 V - Measured turn-off energy defines snubber sizing and thermal design for 10 kHz switching.
RthJC0.35 K/W - Junction-to-case thermal resistance determines minimum heatsink requirement for 150°C max junction operation.

Pinout & Package

IRGP20B120U-EP is housed in a TO-247AD package with extended creepage distance (≥4.5 mm) for reinforced insulation in high-voltage applications. The package features three terminals: Gate (G), Collector (C), and Emitter (E), arranged in standard TO-247AD footprint compatible with industry-standard mounting hardware.

Pin/TerminalCircuit RoleDesign Meaning
GControl input for MOS-gated bipolar transistorReceives voltage-controlled signal to modulate collector current; requires ±20 V absolute max rating and 5.0 V min threshold.
CHigh-side power terminalConnects to positive DC bus or inverter leg high-side node; rated for 1200 V blocking and 40 A continuous conduction.
EPower return and reference nodeServes as emitter reference for gate drive and current sensing; shares common path with anti-parallel diode cathode.

Key Features

FeatureDesign Value
NPT Field-Stop StructureEnables 1200 V blocking with controlled tail current decay, reducing turn-off loss while maintaining short-circuit ruggedness.
Extended Creepage TO-247AD4.5 mm minimum creepage distance meets IEC 61800-5-1 reinforced insulation requirements for 1000 V AC systems.
Co-Packaged Ultrafast DiodeAnti-parallel diode with 150 ns trr and soft recovery minimizes voltage overshoot during freewheeling in bridge-leg configurations.
150°C Maximum Junction TemperatureSupports higher power density designs by allowing elevated thermal operating points without derating to 125°C limits.

Applications

Industrial Motor DrivesUninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 15–30 kW variable-frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-side IGBT switch in six-pack inverter module; handles 40 A RMS output current at 4 kHz PWM frequency.

Use Value: 2.2 V VCE(sat) reduces conduction loss by ~18% versus comparable 1200 V IGBTs, lowering heatsink size and system cost.

Use Scenario: Inverter output stage of online double-conversion UPS delivering clean 230 V AC to critical IT loads.

IC Role / Device Role / Timing Role: Main switching device in full-bridge inverter leg; operates with 600 V DC bus and 50/60 Hz fundamental output.

Use Value: 10 µs short-circuit withstand time allows safe fault clearing via controller-level shutdown without external desat detection.

Solar Photovoltaic InvertersInduction Heating Systems

Use Scenario: DC–AC conversion stage in central string inverters for commercial rooftop PV installations.

IC Role / Device Role / Timing Role: High-voltage IGBT in NPC (neutral-point-clamped) topology; switches at 16 kHz with 1000 V DC input.

Use Value: Extended creepage distance ensures long-term reliability in humid outdoor enclosures per IEC 62109 safety standards.

Use Scenario: Resonant half-bridge inverter driving 20–50 kW induction coils for metal forging and heat treatment.

IC Role / Device Role / Timing Role: Hard-switched main switch handling repetitive 10–20 kHz bursts with peak currents >60 A.

Use Value: Co-packaged ultrafast diode eliminates need for external fast recovery diodes, simplifying PCB layout and reducing EMI sources.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXYS IXGN50N120B31200 V / 50 A rating; higher current but larger VCE(sat) (2.5 V typ); no co-packaged diode.Requires external diode; better suited for lower-frequency, higher-current applications like welders.Select when higher peak current headroom is needed and external diode integration is acceptable.
STMicroelectronics STGW40H120F21200 V / 40 A; trench-gate field-stop structure; 2.1 V VCE(sat); includes integrated diode but shorter tsc (6 µs).Limited short-circuit robustness restricts use in unclamped inductive load scenarios without fast protection.Prefer for space-constrained designs where lower VCE(sat) outweighs need for extended fault tolerance.

Compared with IXGN50N120B3 and STGW40H120F2, IRGP20B120U-EP uniquely balances 10 µs short-circuit ruggedness, co-packaged diode integration, and extended creepage-making it optimal for industrial inverters requiring both safety compliance and protection simplicity.

Availability

IRGP20B120U-EP is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar photovoltaic inverters, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for IRGP20B120U-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The IRG series targets high-reliability industrial power conversion, emphasizing ruggedness, thermal performance, and safety-compliant packaging for mission-critical inverter applications.

FAQ

What is the maximum gate-emitter voltage rating for IRGP20B120U-EP?

The absolute maximum gate-emitter voltage is ±20 V. Exceeding this limit risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure fast, noise-immune switching and prevent unintended conduction during transients.

Does IRGP20B120U-EP include an integrated anti-parallel diode?

Yes, it integrates an ultrafast soft-recovery diode rated for 40 A average forward current and 150 ns reverse recovery time. This diode shares the same TO-247AD package and thermal path as the IGBT, eliminating the need for discrete diode placement and improving thermal coupling in inverter legs.

Can IRGP20B120U-EP be used in parallel configurations?

Parallel operation is feasible but requires matched devices, symmetrical PCB layout, individual gate resistors, and current-sharing inductors. The NPT structure provides positive temperature coefficient for VCE(sat), aiding inherent current sharing above 100°C junction temperature-critical for reliable paralleling in high-power modules.

What is the recommended minimum creepage distance for PCB layout around IRGP20B120U-EP?

The TO-247AD package provides ≥4.5 mm creepage distance between collector and emitter terminals. For PCB design, maintain ≥6.0 mm clearance between high-voltage traces (e.g., DC bus nodes) and low-voltage control areas to comply with IEC 61800-5-1 reinforced insulation requirements at 1000 V AC working voltage.

IRGP20B120U-EP Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
40 A
Current - Collector Pulsed (Icm):
120 A
Vce(on) (Max) @ Vge, Ic:
4.85V @ 15V, 40A
Power - Max:
300 W
Switching Energy:
850µJ (on), 425µJ (off)
Input Type:
Standard
Gate Charge:
169 nC
Td (on/off) @ 25°C:
-
Test Condition:
600V, 20A, 5Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247AD

IRGP20B120U-EP FAQ

1.How can I place an order for IRGP20B120U-EP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGP20B120U-EP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGP20B120U-EP reliable?

The price and inventory of IRGP20B120U-EP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP20B120U-EP is usually 5 days.

3.What payment methods are accepted for IRGP20B120U-EP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP20B120U-EP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGP20B120U-EP?

IRGP20B120U-EP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGP20B120U-EP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGP20B120U-EP?

For technical support, including IRGP20B120U-EP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP20B120U-EP requirements.

6.How does Aetrix verify that IRGP20B120U-EP is sourced from the original manufacturer or authorized distributors?

All IRGP20B120U-EP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP20B120U-EP meets industry standards.

7.What is the process for return or replacement of IRGP20B120U-EP?

All IRGP20B120U-EP units undergo pre-shipment inspection (PSI). If there is an issue with IRGP20B120U-EP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGP20B120U-EP part is unused and in its original packaging.

Return procedure for IRGP20B120U-EP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRGP20B120U-EP Tags

  • IRGP20B120U-EP
  • IRGP20B120U-EP PDF
  • IRGP20B120U-EP Datasheet
  • IRGP20B120U-EP Specifications
  • IRGP20B120U-EP Images
  • Infineon Technologies
  • Infineon Technologies IRGP20B120U-EP
  • Buy IRGP20B120U-EP
  • IRGP20B120U-EP Price
  • IRGP20B120U-EP Distributor
  • IRGP20B120U-EP Supplier
  • IRGP20B120U-EP Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER