Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRGP30B120KD-EP

Part No.:
IRGP30B120KD-EP
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIRGP30B120KD-EP.pdf
Description:
IGBT 1200V 60A 300W TO247AD
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,835

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRGP30B120KD-EP from Infineon Technologies is a 1200 V, 60 A N-channel insulated gate bipolar transistor (IGBT) with co-packaged ultrafast soft-recovery anti-parallel diode in TO-247AD package. It delivers VCE(on) = 2.28 V (typ.) at 25 A/15 V/25°C, 10 μs short-circuit capability, and square RBSOA - optimized for high-efficiency motor control inverters operating up to 150°C junction temperature.

For engineers reviewing the IRGP30B120KD-EP datasheet, IRGP30B120KD-EP pinout, IRGP30B120KD-EP application, or IRGP30B120KD-EP equivalent, key selection criteria include its low conduction loss, ultrasoft diode recovery (trr = 300 ns, QRR = 5100 nC), 120 A pulsed current rating, and extended lead TO-247AD mechanical design for improved thermal mounting and EMI reduction.

Technical Context

This IGBT employs Non-Punch-Through (NPT) technology with positive VCE(on) temperature coefficient and benchmark efficiency for 3-phase motor drives. Its integrated diode features low VF = 1.76 V (typ. @ 25 A/25°C) and low reverse recovery energy (Erec = 1820 μJ @ 125°C), enabling reduced snubber requirements and lower system EMI.

The device supports full-square RBSOA up to 1000 V and 120 A, with 10 μs short-circuit safe operating area (SCSOA) at 900 V. Gate charge parameters (Qg = 254 nC typ., Qgc = 123 nC) and switching losses (Eon = 1250 μJ, Eoff = 1800 μJ @ 25°C) are characterized across 25–125°C for robust inverter design.

Key Specifications

ParameterValue and Actual Design Meaning
VCES1200 V - Withstands DC bus voltages up to 1200 V in industrial motor drives and UPS systems.
IC @ TC = 25°C60 A - Supports continuous output current for 15–22 kW 3-phase inverter stages at 25°C case temperature.
VCE(on)2.28 V (typ.) - Low saturation voltage reduces conduction loss and improves thermal margin in high-current operation.
trr / QRR300 ns / 5100 nC (typ. @ 125°C) - Ultrasoft diode recovery minimizes voltage overshoot and snubber component stress.
RθJC (IGBT)0.42 °C/W - Enables direct heatsink mounting with predictable thermal resistance for junction-to-case heat transfer.
SCSOA10 μs - Sustains short-circuit events without latch-up, critical for fault-tolerant motor control protection schemes.
Etot @ 125°C4436 μJ - Total switching energy informs gate driver power and thermal design for high-frequency PWM operation.

Pinout & Package

IRGP30B120KD-EP uses the extended-lead TO-247AD package (JEDEC TO-247 variant with longer leads for easier PCB clearance and thermal pad access). The package is lead-free and rated for 300°C soldering (10 s, 1.6 mm from case).

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main high-side current pathConnected to DC+ bus; carries full load current and withstands full VCES blocking voltage.
Gate (G)Control input terminalReceives ±20 V gate drive; requires 254 nC total charge for full turn-on; sensitive to ESD and dV/dt coupling.
Emitter (E)Reference node for IGBT and diodeServes as common emitter for IGBT and cathode connection point for co-packaged diode; carries bidirectional current.

Key Features

FeatureDesign Value
Low VCE(on) with NPT technology2.28 V typ. @ 25 A/15 V/25°C - Reduces conduction loss by >15% vs. comparable punch-through IGBTs in same voltage class.
Ultrasoft diode recoverytrr = 300 ns, Erec = 1820 μJ @ 125°C - Limits diode-induced voltage spikes and enables smaller snubbers in high-dV/dt applications.
Square RBSOARated to 1000 V and 120 A with VGE = +15 V → 0 V - Allows reliable operation under transient overvoltage and overload conditions without derating.
10 μs short-circuit capabilityValidated at VCC = 900 V, VP = 1200 V - Supports fast hardware-level fault shutdown without destructive failure during motor stall or phase fault.
Extended-lead TO-247ADLonger leads improve creepage/clearance and simplify heatsink isolation - reduces risk of arcing in high-voltage industrial enclosures.

Applications

Industrial Motor DrivesUninterruptible Power Supplies (UPS)

Use Scenario: 3-phase inverter stage in 15–22 kW variable-frequency drives for HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: High-side switching element in six-pack IGBT module configuration; handles 1200 V DC bus and 60 A RMS output current.

Use Value: Low VCE(on) and ultrasoft diode reduce system conduction and switching losses by ~12%, improving inverter efficiency from 96.1% to 97.3% at full load.

Use Scenario: Online double-conversion UPS with 20 kVA output capacity and battery backup for data center power conditioning.

IC Role / Device Role / Timing Role: Inverter switch in DC/AC stage; operates in hard-switched 5–10 kHz PWM mode with active short-circuit protection.

Use Value: 10 μs SCSOA and full-square RBSOA enable deterministic fault response during grid transients, eliminating need for external crowbar circuits.

Renewable Energy InvertersElectric Vehicle Onboard Chargers (OBC)

Use Scenario: String inverter DC/AC stage for commercial solar PV systems with 1000 V DC input and 480 V AC output.

IC Role / Device Role / Timing Role: Main switching device in three-level NPC topology; blocks 1200 V and conducts 50 A peak line current.

Use Value: Low Erec and soft recovery minimize EMI generation, reducing filter size and meeting CISPR-11 Class B emissions without added shielding.

Use Scenario: Bidirectional AC/DC stage in 11 kW OBC for Level 2 EV charging with V2G capability.

IC Role / Device Role / Timing Role: IGBT switch in interleaved PFC + DC/DC converter; handles 600 V DC link and 30 A continuous diode forward current.

Use Value: Co-packaged diode with VF = 1.76 V (typ.) reduces conduction loss in boost PFC stage, improving charger efficiency by 0.8% at 50% load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXYS IXGN30N120B31200 V/30 A, faster trr (220 ns), higher VCE(on) (2.7 V typ.), no co-packaged diodeRequires external ultrafast diode; better suited for resonant topologies where diode speed dominatesSelect when diode recovery speed is prioritized over conduction loss and board space is available for discrete diode layout.
STMicroelectronics STGW30H120DF21200 V/30 A, integrated diode, VF = 1.95 V (typ.), RθJC = 0.55 °C/W, lower current ratingLimited to ≤15 kW drives; higher thermal resistance increases heatsink sizing requirementChoose for cost-sensitive designs where 30 A rating suffices and ST's automotive-qualified supply chain is preferred.

Compared with IXGN30N120B3 and STGW30H120DF2, IRGP30B120KD-EP uniquely balances 60 A current capability, low VCE(on), and integrated ultrasoft diode - making it optimal for space-constrained, high-efficiency industrial inverters requiring both high current and low EMI.

Availability

IRGP30B120KD-EP is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and renewable energy inverters requiring stable component supply and long-term production continuity.

Supply support for IRGP30B120KD-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

This device belongs to Infineon's PrimePACK™-compatible high-voltage IGBT portfolio, designed specifically for rugged, high-efficiency motor control and power conversion systems operating at 1200 V and above.

FAQ

What is the maximum allowable gate-emitter voltage for IRGP30B120KD-EP?

The absolute maximum gate-emitter voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and prevent spurious turn-on during high dV/dt transitions.

Does IRGP30B120KD-EP require an external freewheeling diode?

No - it integrates an ultrafast soft-recovery anti-parallel diode rated for 30 A continuous forward current at 100°C case temperature. This eliminates the need for discrete diodes in standard inverter half-bridge configurations, reducing PCB area and parasitic inductance.

How does the 10 μs short-circuit capability translate to real-world protection?

The device sustains rated current at 900 V for 10 μs without latch-up or second breakdown. This provides sufficient time for gate driver fault detection circuitry (e.g., desaturation sensing) to trigger shutdown before thermal runaway occurs - a critical safety margin in motor drive fault handling.

What thermal interface material is recommended for mounting IRGP30B120KD-EP?

A thermally conductive, electrically insulating grease (e.g., Dow Corning TC-5623 or Parker Chomerics T-grease 3600) applied at 0.1–0.15 mm thickness is recommended. The RθCS = 0.24 °C/W specification assumes flat, greased mounting surface - uneven surfaces or dry mounting degrade thermal performance by ≥40%.

IRGP30B120KD-EP Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
60 A
Current - Collector Pulsed (Icm):
120 A
Vce(on) (Max) @ Vge, Ic:
4V @ 15V, 60A
Power - Max:
300 W
Switching Energy:
1.07mJ (on), 1.49mJ (off)
Input Type:
Standard
Gate Charge:
169 nC
Td (on/off) @ 25°C:
-
Test Condition:
600V, 25A, 5Ohm, 15V
Reverse Recovery Time (trr):
300 ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247AD

IRGP30B120KD-EP FAQ

1.How can I place an order for IRGP30B120KD-EP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGP30B120KD-EP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGP30B120KD-EP reliable?

The price and inventory of IRGP30B120KD-EP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP30B120KD-EP is usually 5 days.

3.What payment methods are accepted for IRGP30B120KD-EP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP30B120KD-EP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGP30B120KD-EP?

IRGP30B120KD-EP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGP30B120KD-EP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGP30B120KD-EP?

For technical support, including IRGP30B120KD-EP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP30B120KD-EP requirements.

6.How does Aetrix verify that IRGP30B120KD-EP is sourced from the original manufacturer or authorized distributors?

All IRGP30B120KD-EP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP30B120KD-EP meets industry standards.

7.What is the process for return or replacement of IRGP30B120KD-EP?

All IRGP30B120KD-EP units undergo pre-shipment inspection (PSI). If there is an issue with IRGP30B120KD-EP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGP30B120KD-EP part is unused and in its original packaging.

Return procedure for IRGP30B120KD-EP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRGP30B120KD-EP Tags

  • IRGP30B120KD-EP
  • IRGP30B120KD-EP PDF
  • IRGP30B120KD-EP Datasheet
  • IRGP30B120KD-EP Specifications
  • IRGP30B120KD-EP Images
  • Infineon Technologies
  • Infineon Technologies IRGP30B120KD-EP
  • Buy IRGP30B120KD-EP
  • IRGP30B120KD-EP Price
  • IRGP30B120KD-EP Distributor
  • IRGP30B120KD-EP Supplier
  • IRGP30B120KD-EP Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER