Infineon Technologies IRGP30B120KD-EP
- Part No.:
- IRGP30B120KD-EP
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
IRGP30B120KD-EP.pdf
- Description:
- IGBT 1200V 60A 300W TO247AD
- Quantity:
- Payment:

- Shipping:

Inventory:9,835
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Product details
Overview
IRGP30B120KD-EP from Infineon Technologies is a 1200 V, 60 A N-channel insulated gate bipolar transistor (IGBT) with co-packaged ultrafast soft-recovery anti-parallel diode in TO-247AD package. It delivers VCE(on) = 2.28 V (typ.) at 25 A/15 V/25°C, 10 μs short-circuit capability, and square RBSOA - optimized for high-efficiency motor control inverters operating up to 150°C junction temperature.
For engineers reviewing the IRGP30B120KD-EP datasheet, IRGP30B120KD-EP pinout, IRGP30B120KD-EP application, or IRGP30B120KD-EP equivalent, key selection criteria include its low conduction loss, ultrasoft diode recovery (trr = 300 ns, QRR = 5100 nC), 120 A pulsed current rating, and extended lead TO-247AD mechanical design for improved thermal mounting and EMI reduction.
Technical Context
This IGBT employs Non-Punch-Through (NPT) technology with positive VCE(on) temperature coefficient and benchmark efficiency for 3-phase motor drives. Its integrated diode features low VF = 1.76 V (typ. @ 25 A/25°C) and low reverse recovery energy (Erec = 1820 μJ @ 125°C), enabling reduced snubber requirements and lower system EMI.
The device supports full-square RBSOA up to 1000 V and 120 A, with 10 μs short-circuit safe operating area (SCSOA) at 900 V. Gate charge parameters (Qg = 254 nC typ., Qgc = 123 nC) and switching losses (Eon = 1250 μJ, Eoff = 1800 μJ @ 25°C) are characterized across 25–125°C for robust inverter design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 1200 V - Withstands DC bus voltages up to 1200 V in industrial motor drives and UPS systems. |
| IC @ TC = 25°C | 60 A - Supports continuous output current for 15–22 kW 3-phase inverter stages at 25°C case temperature. |
| VCE(on) | 2.28 V (typ.) - Low saturation voltage reduces conduction loss and improves thermal margin in high-current operation. |
| trr / QRR | 300 ns / 5100 nC (typ. @ 125°C) - Ultrasoft diode recovery minimizes voltage overshoot and snubber component stress. |
| RθJC (IGBT) | 0.42 °C/W - Enables direct heatsink mounting with predictable thermal resistance for junction-to-case heat transfer. |
| SCSOA | 10 μs - Sustains short-circuit events without latch-up, critical for fault-tolerant motor control protection schemes. |
| Etot @ 125°C | 4436 μJ - Total switching energy informs gate driver power and thermal design for high-frequency PWM operation. |
Pinout & Package
IRGP30B120KD-EP uses the extended-lead TO-247AD package (JEDEC TO-247 variant with longer leads for easier PCB clearance and thermal pad access). The package is lead-free and rated for 300°C soldering (10 s, 1.6 mm from case).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main high-side current path | Connected to DC+ bus; carries full load current and withstands full VCES blocking voltage. |
| Gate (G) | Control input terminal | Receives ±20 V gate drive; requires 254 nC total charge for full turn-on; sensitive to ESD and dV/dt coupling. |
| Emitter (E) | Reference node for IGBT and diode | Serves as common emitter for IGBT and cathode connection point for co-packaged diode; carries bidirectional current. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(on) with NPT technology | 2.28 V typ. @ 25 A/15 V/25°C - Reduces conduction loss by >15% vs. comparable punch-through IGBTs in same voltage class. |
| Ultrasoft diode recovery | trr = 300 ns, Erec = 1820 μJ @ 125°C - Limits diode-induced voltage spikes and enables smaller snubbers in high-dV/dt applications. |
| Square RBSOA | Rated to 1000 V and 120 A with VGE = +15 V → 0 V - Allows reliable operation under transient overvoltage and overload conditions without derating. |
| 10 μs short-circuit capability | Validated at VCC = 900 V, VP = 1200 V - Supports fast hardware-level fault shutdown without destructive failure during motor stall or phase fault. |
| Extended-lead TO-247AD | Longer leads improve creepage/clearance and simplify heatsink isolation - reduces risk of arcing in high-voltage industrial enclosures. |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: 3-phase inverter stage in 15–22 kW variable-frequency drives for HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: High-side switching element in six-pack IGBT module configuration; handles 1200 V DC bus and 60 A RMS output current. Use Value: Low VCE(on) and ultrasoft diode reduce system conduction and switching losses by ~12%, improving inverter efficiency from 96.1% to 97.3% at full load. | Use Scenario: Online double-conversion UPS with 20 kVA output capacity and battery backup for data center power conditioning. IC Role / Device Role / Timing Role: Inverter switch in DC/AC stage; operates in hard-switched 5–10 kHz PWM mode with active short-circuit protection. Use Value: 10 μs SCSOA and full-square RBSOA enable deterministic fault response during grid transients, eliminating need for external crowbar circuits. |
| Renewable Energy Inverters | Electric Vehicle Onboard Chargers (OBC) |
Use Scenario: String inverter DC/AC stage for commercial solar PV systems with 1000 V DC input and 480 V AC output. IC Role / Device Role / Timing Role: Main switching device in three-level NPC topology; blocks 1200 V and conducts 50 A peak line current. Use Value: Low Erec and soft recovery minimize EMI generation, reducing filter size and meeting CISPR-11 Class B emissions without added shielding. | Use Scenario: Bidirectional AC/DC stage in 11 kW OBC for Level 2 EV charging with V2G capability. IC Role / Device Role / Timing Role: IGBT switch in interleaved PFC + DC/DC converter; handles 600 V DC link and 30 A continuous diode forward current. Use Value: Co-packaged diode with VF = 1.76 V (typ.) reduces conduction loss in boost PFC stage, improving charger efficiency by 0.8% at 50% load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN30N120B3 | 1200 V/30 A, faster trr (220 ns), higher VCE(on) (2.7 V typ.), no co-packaged diode | Requires external ultrafast diode; better suited for resonant topologies where diode speed dominates | Select when diode recovery speed is prioritized over conduction loss and board space is available for discrete diode layout. |
| STMicroelectronics STGW30H120DF2 | 1200 V/30 A, integrated diode, VF = 1.95 V (typ.), RθJC = 0.55 °C/W, lower current rating | Limited to ≤15 kW drives; higher thermal resistance increases heatsink sizing requirement | Choose for cost-sensitive designs where 30 A rating suffices and ST's automotive-qualified supply chain is preferred. |
Compared with IXGN30N120B3 and STGW30H120DF2, IRGP30B120KD-EP uniquely balances 60 A current capability, low VCE(on), and integrated ultrasoft diode - making it optimal for space-constrained, high-efficiency industrial inverters requiring both high current and low EMI.
Availability
IRGP30B120KD-EP is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and renewable energy inverters requiring stable component supply and long-term production continuity.
Supply support for IRGP30B120KD-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.
This device belongs to Infineon's PrimePACK™-compatible high-voltage IGBT portfolio, designed specifically for rugged, high-efficiency motor control and power conversion systems operating at 1200 V and above.
FAQ
What is the maximum allowable gate-emitter voltage for IRGP30B120KD-EP?
The absolute maximum gate-emitter voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and prevent spurious turn-on during high dV/dt transitions.
Does IRGP30B120KD-EP require an external freewheeling diode?
No - it integrates an ultrafast soft-recovery anti-parallel diode rated for 30 A continuous forward current at 100°C case temperature. This eliminates the need for discrete diodes in standard inverter half-bridge configurations, reducing PCB area and parasitic inductance.
How does the 10 μs short-circuit capability translate to real-world protection?
The device sustains rated current at 900 V for 10 μs without latch-up or second breakdown. This provides sufficient time for gate driver fault detection circuitry (e.g., desaturation sensing) to trigger shutdown before thermal runaway occurs - a critical safety margin in motor drive fault handling.
What thermal interface material is recommended for mounting IRGP30B120KD-EP?
A thermally conductive, electrically insulating grease (e.g., Dow Corning TC-5623 or Parker Chomerics T-grease 3600) applied at 0.1–0.15 mm thickness is recommended. The RθCS = 0.24 °C/W specification assumes flat, greased mounting surface - uneven surfaces or dry mounting degrade thermal performance by ≥40%.
IRGP30B120KD-EP Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 1200 V
- Current - Collector (Ic) (Max):
- 60 A
- Current - Collector Pulsed (Icm):
- 120 A
- Vce(on) (Max) @ Vge, Ic:
- 4V @ 15V, 60A
- Power - Max:
- 300 W
- Switching Energy:
- 1.07mJ (on), 1.49mJ (off)
- Input Type:
- Standard
- Gate Charge:
- 169 nC
- Td (on/off) @ 25°C:
- -
- Test Condition:
- 600V, 25A, 5Ohm, 15V
- Reverse Recovery Time (trr):
- 300 ns
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AD
IRGP30B120KD-EP FAQ
1.How can I place an order for IRGP30B120KD-EP through Aetrix?
Please submit a Request for Quotation (RFQ) for IRGP30B120KD-EP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRGP30B120KD-EP reliable?
The price and inventory of IRGP30B120KD-EP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP30B120KD-EP is usually 5 days.
3.What payment methods are accepted for IRGP30B120KD-EP?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP30B120KD-EP transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRGP30B120KD-EP?
IRGP30B120KD-EP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRGP30B120KD-EP order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRGP30B120KD-EP?
For technical support, including IRGP30B120KD-EP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP30B120KD-EP requirements.
6.How does Aetrix verify that IRGP30B120KD-EP is sourced from the original manufacturer or authorized distributors?
All IRGP30B120KD-EP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP30B120KD-EP meets industry standards.
7.What is the process for return or replacement of IRGP30B120KD-EP?
All IRGP30B120KD-EP units undergo pre-shipment inspection (PSI). If there is an issue with IRGP30B120KD-EP, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRGP30B120KD-EP part is unused and in its original packaging.
Return procedure for IRGP30B120KD-EP:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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