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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGP30B120KDPBF

Name: IRGP30B120KDPBF
Brand: Infineon Technologies
SKU: IRGP30B120KDPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGP30B120KDPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IRGP30B120KDPBF.pdf

Description:: IGBT 1200V 60A 300W TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRGP30B120KDPBF from Infineon Technologies is a 1200 V, 60 A (T_C = 25°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery anti-parallel diode in TO-247AD package. It delivers V_CE(on) = 2.28 V (typ.) at I_C = 25 A, 15 V_GE, 25°C; 10 μs short-circuit capability; and square RBSOA - optimized for motor control inverters, industrial UPS, and solar string inverters.

For engineers reviewing the IRGP30B120KDPBF datasheet, IRGP30B120KDPBF pinout, IRGP30B120KDPBF application, or IRGP30B120KDPBF equivalent, key selection criteria include V_CE(on) temperature coefficient, diode reverse recovery energy (E_rec = 1820–2400 μJ), RBSOA robustness, gate charge (Q_g = 169–254 nC), and thermal resistance (R_θJC = 0.42°C/W for IGBT).

Technical Context

This NPT (Non-Punch-Through) IGBT employs low-V_CE(on) technology with positive temperature coefficient for stable parallel operation and inherent current limiting. Its co-packaged diode features ultra-soft recovery (t_rr = 300 ns, I_rr = 34–38 A) and low forward voltage (V_F = 1.76 V typ. @ 25 A, 25°C), minimizing switching losses and EMI in hard-switched topologies.

The device supports full-square RBSOA up to 1000 V and 120 A, with validated short-circuit safe operating area (SCSOA) of 10 μs at V_CC = 900 V and T_J = 150°C. Gate drive requirements are defined by Q_ge = 19–29 nC and Q_gc = 82–123 nC, enabling predictable turn-on/turn-off timing with R_g = 5 Ω.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	1200 V - Withstands DC bus voltages up to 1200 V in industrial and renewable energy systems
I_C (T_C = 25°C)	60 A - Sustains continuous output current for 15–20 kW motor drives without forced cooling
V_CE(on) (25°C)	2.28 V (typ.) - Reduces conduction loss to ~57 W at 25 A, improving system efficiency
E_rec (T_J = 125°C)	1820–2400 μJ - Low diode recovery energy minimizes snubber size and stress on adjacent devices
R_θJC (IGBT)	0.42 °C/W - Enables direct heatsink mounting with <10 K/W total thermal path for 300 W dissipation
t_sc	10 μs - Supports reliable overcurrent protection in fast-response motor control fault handling
Q_g	169–254 nC - Determines gate driver peak current requirement (~50 A for 5 ns rise time)

Pinout & Package

IRGP30B120KDPBF uses the extended-lead TO-247AD package - a 3-terminal through-hole power package with isolated mounting hole, optimized for high-voltage isolation and mechanical stability in industrial modules.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to DC+ bus; rated for 1200 V blocking and 120 A pulsed current
Gate (G)	Control input for IGBT channel	Requires ±20 V absolute max; 19–29 nC gate-emitter charge defines drive strength needs
Emitter (E)	Common reference for IGBT and diode	Serves as return path for both IGBT collector current and diode forward current; internal emitter inductance = 13 nH

Key Features

Feature	Design Value
Ultrafast soft-recovery diode	t_rr = 300 ns, I_rr = 34–38 A, E_rec = 1820–2400 μJ - reduces voltage overshoot and EMI during freewheeling
Square RBSOA	Validated up to 1000 V, 120 A, 100 μs - enables reliable operation under transient overvoltage conditions
Positive V_CE(on) tempco	+1.2 mV/°C increase per °C junction rise - ensures natural current sharing in paralleled configurations
Low V_F diode	1.76 V (typ. @ 25 A, 25°C) - cuts conduction loss by ~15% vs. standard FRD in same package
Extended lead TO-247AD	Lead length ≥ 4.5 mm - improves creepage distance and simplifies PCB layout for 1200 V isolation

Applications

Industrial Motor Drives

Solar String Inverters

Use Scenario: Three-phase 15–25 kW AC induction motor drives with field-oriented control (FOC) and regenerative braking.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles 60 A RMS output with 10 kHz PWM and 1200 V DC-link.

Use Value: Square RBSOA and 10 μs SCSOA ensure fault ride-through during sudden load changes; low E_rec reduces snubber capacitor size by 30%.

Use Scenario: Single-phase transformerless string inverters converting 800–1000 V PV DC to 230 V AC grid.

IC Role / Device Role / Timing Role: High-side switch in H-bridge topology; operates at 16–20 kHz with bidirectional current flow via integrated diode.

Use Value: Ultra-soft diode recovery (t_rr = 300 ns) suppresses common-mode leakage current and meets IEC 62109 safety requirements.

Uninterruptible Power Supplies

Induction Heating Systems

Use Scenario: Online double-conversion UPS delivering clean 3 kW output with zero transfer time during mains failure.

IC Role / Device Role / Timing Role: Inverter-stage switch managing battery-to-AC conversion; subjected to repetitive 100 A surge currents.

Use Value: Full-square RBSOA and 120 A pulsed rating support overload handling without derating; low V_CE(on) maintains >96% efficiency at full load.

Use Scenario: 5–8 kW resonant induction heating generators operating at 20–50 kHz with high di/dt (>1000 A/μs).

IC Role / Device Role / Timing Role: Half-bridge switch driving series-resonant tank; conducts high-frequency reverse recovery current in diode mode.

Use Value: Diode's low Q_RR and soft recovery minimize switching losses and prevent parasitic oscillation in high-Q tanks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN30N120B3	1200 V, 30 A, TO-247; lower I_C rating but higher V_CE(on) (2.7 V typ.), no integrated diode	Requires external ultrafast diode; suitable only for lower-current (<15 kW) designs with discrete diode layout control	Select when discrete diode optimization is prioritized over integration and thermal coupling
STMicroelectronics STGW30H120DF	1200 V, 30 A, TO-247; includes soft-recovery diode but higher E_rec (3200 μJ) and t_rr (450 ns)	Higher diode losses limit use in high-frequency (>15 kHz) solar inverters where EMI is critical	Prefer for cost-sensitive industrial drives where diode softness is secondary to gate drive simplicity

Compared with IXGN30N120B3 and STGW30H120DF, IRGP30B120KDPBF uniquely combines 60 A current rating, integrated ultra-soft diode (E_rec < 2400 μJ), and NPT-based positive V_CE(on) tempco - making it optimal for high-power, high-reliability motor and solar inverters requiring parallel operation and minimal snubbing.

Availability

IRGP30B120KDPBF is available at Aetrix Electronics and suitable for industrial motor drives, solar string inverters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.

Supply support for IRGP30B120KDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's PrimePACK™-compatible high-voltage IGBT portfolio, designed specifically for rugged, high-efficiency inverters in motor control, solar generation, and UPS systems demanding 1200 V blocking and soft-switching compatibility.

FAQ

What is the maximum allowable gate-emitter voltage for IRGP30B120KDPBF?

The absolute maximum gate-emitter voltage is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V increases risk of gate oxide degradation, while negative bias below –10 V may cause unintended turn-on due to Miller effect during high dv/dt transitions.

Does IRGP30B120KDPBF require an external freewheeling diode?

No - it integrates a co-packaged ultrafast soft-recovery diode rated for 30 A continuous forward current (T_C = 100°C) and 120 A pulsed current. The diode shares the same thermal path and exhibits matched temperature behavior with the IGBT, eliminating need for separate diode selection or thermal design.

How does the 10 μs short-circuit capability translate to real-world protection?

The 10 μs SCSOA rating means the device can withstand rated collector current at full V_CE = 900 V for 10 μs before thermal runaway occurs. This allows time for fast-acting desaturation detection circuits (e.g., using DESAT pins on gate drivers) to trigger shutdown without device destruction.

Can IRGP30B120KDPBF be paralleled reliably without active current balancing?

Yes - its positive V_CE(on) temperature coefficient (+1.2 mV/°C) causes current to naturally redistribute toward cooler devices during thermal transients. Combined with matched gate charge and low internal emitter inductance (13 nH), this enables stable parallel operation with passive gate resistors and symmetrical layout.

IRGP30B120KDPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Bag

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 4V @ 15V, 60A

Power - Max:: 300 W

Switching Energy:: 1.07mJ (on), 1.49mJ (off)

Input Type:: Standard

Gate Charge:: 169 nC

Td (on/off) @ 25°C:: -

Test Condition:: 600V, 25A, 5Ohm, 15V

Reverse Recovery Time (trr):: 300 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRGP30B120KDPBF FAQ

1.How can I place an order for IRGP30B120KDPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGP30B120KDPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGP30B120KDPBF reliable?

The price and inventory of IRGP30B120KDPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP30B120KDPBF is usually 5 days.

3.What payment methods are accepted for IRGP30B120KDPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP30B120KDPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGP30B120KDPBF?

IRGP30B120KDPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGP30B120KDPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGP30B120KDPBF?

For technical support, including IRGP30B120KDPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP30B120KDPBF requirements.

6.How does Aetrix verify that IRGP30B120KDPBF is sourced from the original manufacturer or authorized distributors?

All IRGP30B120KDPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP30B120KDPBF meets industry standards.

7.What is the process for return or replacement of IRGP30B120KDPBF?

All IRGP30B120KDPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGP30B120KDPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGP30B120KDPBF part is unused and in its original packaging.

Return procedure for IRGP30B120KDPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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