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Infineon Technologies IRGP30B60KD-EP

Part No.:
IRGP30B60KD-EP
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIRGP30B60KD-EP.pdf
Description:
IGBT 600V 60A 304W TO247AD
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,761

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Product details

Overview

IRGP30B60KD-EP from Infineon Technologies is a 600 V, 30 A insulated gate bipolar transistor with integrated ultrafast soft-recovery anti-parallel diode in TO-247AD package, featuring 1.95 V typical VCE(on), 10 µs short-circuit capability at 150 °C, and 125 ns diode reverse recovery time - deployed in industrial motor drives requiring high efficiency and low EMI.

For engineers reviewing the IRGP30B60KD-EP datasheet, IRGP30B60KD-EP pinout, IRGP30B60KD-EP application, or IRGP30B60KD-EP equivalent, key selection criteria include RθJC (0.41 °C/W IGBT), square RBSOA, positive VCE(on) temperature coefficient, and clamped inductive load rating of 120 A for robust inverter stage design.

Technical Context

This IGBT employs non-punch-through (NPT) technology to deliver stable VCE(on) across temperature and enable parallel operation without current hogging. Its integrated diode exhibits ultra-soft reverse recovery (trr = 125 ns, Qrr = 3000–5000 nC) and low forward voltage (VF = 1.30 V @ 30 A), minimizing switching losses and voltage overshoot in hard-switched topologies.

The device supports full-square RBSOA up to 600 V and 10 µs SCSOA at 150 °C, enabling reliable operation under transient overloads. Gate charge parameters (Qg = 102–153 nC, Qgc = 44–66 nC) and switching energies (Eon = 635–1085 µJ, Eoff = 1150–1350 µJ @ 150 °C) are characterized for 400 V bus applications with 10 Ω gate resistance.

Key Specifications

Parameter Value and Actual Design Meaning
VCES 600 V - Withstands DC bus voltages up to 600 V without breakdown, suitable for 400 V AC input rectified systems.
IC @ TC = 100 °C 30 A - Continuous collector current derated for thermal management in enclosed motor drive enclosures.
VCE(on) typ. 1.95 V @ 30 A, 15 V VGE - Low conduction loss enables >98% inverter efficiency at rated load.
tsc >10 µs @ TJ = 150 °C - Enables robust short-circuit protection with standard desaturation detection circuits.
RθJC (IGBT) 0.41 °C/W - Enables direct heatsink mounting with predictable junction-to-case thermal path for thermal modeling.
trr 125 ns - Ultrafast soft recovery minimizes diode-induced voltage spikes and EMI in PFC and inverter stages.
Erec 925–1165 µJ @ TJ = 150 °C - Quantified reverse recovery energy used for snubber sizing and loss budgeting.

Pinout & Package

TO-247AD package with isolated mounting tab; three-terminal configuration optimized for high-current switching and thermal dissipation.

Pin/Terminal Circuit Role Design Meaning
Collector (C) Main power output terminal Connected to DC bus high-side; carries full load current and withstands 600 V blocking.
Gate (G) Control input Receives ±20 V gate drive; requires 102–153 nC total charge for full turn-on with controlled dV/dt.
Emitter (E) Power return and reference node Serves as common source for IGBT and diode; must be low-inductance layout to minimize shoot-through risk.

Key Features

Feature Design Value
Ultrafast soft-recovery diode trr = 125 ns, Qrr = 3000–5000 nC - Reduces diode-induced voltage overshoot and EMI in hard-switched inverters.
Square RBSOA Rated for full 600 V × 30 A operation at 150 °C - Enables safe linear-mode operation during transients without derating.
Positive VCE(on) tempco +mV/°C drift - Ensures inherent current sharing stability when paralleling multiple devices.
10 µs short-circuit capability Validated at TJ = 150 °C - Supports deterministic fault response in motor control safety architectures (e.g., IEC 61800-5-2).
Low VF diode 1.30 V @ 30 A, 25 °C - Reduces conduction loss in freewheeling paths, improving overall system efficiency.

Applications

Industrial Motor Drives Uninterruptible Power Supplies

Use Scenario: Three-phase inverter stage in 5–10 kW variable-frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Main switching device in leg topology; handles 30 A RMS output current with 400 V DC bus.

Use Value: Square RBSOA and 10 µs short-circuit rating enable compliance with IEC 61800-5-2 functional safety requirements without external crowbar circuits.

Use Scenario: Inverter output stage in online double-conversion UPS systems delivering clean 230 V AC backup power.

IC Role / Device Role / Timing Role: High-side switch in H-bridge; operates at 4–16 kHz PWM with synchronous rectification via integrated diode.

Use Value: Ultra-soft diode recovery (125 ns trr) suppresses high-frequency ringing, reducing filter component count and EMI filter size.

Solar Inverters Induction Heating Systems

Use Scenario: DC–AC stage in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: IGBT switch in NPC or T-type three-level topology; blocks 600 V and conducts 30 A peak current.

Use Value: Positive VCE(on) temperature coefficient ensures stable current sharing across paralleled devices under thermal stress.

Use Scenario: Half-bridge resonant inverter in 3–10 kW induction cooktops and industrial heating units.

IC Role / Device Role / Timing Role: High-current switching element operating at 20–100 kHz with zero-voltage switching assistance.

Use Value: Low diode VF (1.30 V) and soft recovery reduce conduction and commutation losses, improving thermal margin at high duty cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT with integrated diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXYS IXGN30N60A3 600 V, 30 A; lower Qg (75 nC), higher VF (1.7 V), no specified tsc rating Lacks documented 10 µs short-circuit capability; requires external desaturation protection circuitry Preferred where gate drive power is constrained but short-circuit robustness is secondary
STMicroelectronics STGW30H60DF 600 V, 30 A; faster trr (90 ns), higher Eoff (1500 µJ), RθJC = 0.45 °C/W Higher switching loss at 150 °C reduces efficiency in thermally limited enclosures Selected when ultra-low diode recovery time is prioritized over conduction loss and thermal resistance

Compared with IXGN30N60A3 and STGW30H60DF, IRGP30B60KD-EP uniquely balances short-circuit ruggedness, thermal resistance, and soft recovery - making it optimal for industrial inverters where reliability under overload and thermal margin are co-primary constraints.

Availability

IRGP30B60KD-EP is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for IRGP30B60KD-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's "High Voltage IGBTs" product line, engineered specifically for high-efficiency, high-reliability inverter stages in industrial motor control and power conversion systems.

FAQ

What is the maximum gate-emitter voltage rating for IRGP30B60KD-EP?

The absolute maximum VGE is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure fast, noise-immune switching and prevent spurious conduction during high dv/dt events.

Does IRGP30B60KD-EP require a negative gate voltage for reliable turn-off?

While not strictly required, applying –5 V to –10 V during turn-off improves immunity to Miller-induced false triggering in high-speed, high-dv/dt applications such as motor drives. The device's VGE(th) is 3.5–5.5 V, so 0 V gate bias may be insufficient under noisy conditions.

How is the 10 µs short-circuit capability validated?

Tested per JEDEC JESD22-A110 with VCC = 400 V, VGE = 15 V, TJ = 150 °C, and resistive load - confirming survival for ≥10 µs before thermal runaway. This rating assumes proper gate drive strength and desaturation detection response time < 5 µs.

Can IRGP30B60KD-EP be paralleled with other units?

Yes - its positive VCE(on) temperature coefficient and square RBSOA enable stable current sharing. Successful paralleling requires matched gate drive impedance (< ±5% variation), symmetrical PCB layout, and individual emitter degeneration resistors (0.05–0.1 Ω) for dynamic balancing.

IRGP30B60KD-EP Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
60 A
Current - Collector Pulsed (Icm):
120 A
Vce(on) (Max) @ Vge, Ic:
2.35V @ 15V, 30A
Power - Max:
304 W
Switching Energy:
350µJ (on), 825µJ (off)
Input Type:
Standard
Gate Charge:
102 nC
Td (on/off) @ 25°C:
46ns/185ns
Test Condition:
400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr):
125 ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247AD

IRGP30B60KD-EP FAQ

1.How can I place an order for IRGP30B60KD-EP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGP30B60KD-EP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGP30B60KD-EP reliable?

The price and inventory of IRGP30B60KD-EP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP30B60KD-EP is usually 5 days.

3.What payment methods are accepted for IRGP30B60KD-EP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP30B60KD-EP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGP30B60KD-EP?

IRGP30B60KD-EP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGP30B60KD-EP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGP30B60KD-EP?

For technical support, including IRGP30B60KD-EP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP30B60KD-EP requirements.

6.How does Aetrix verify that IRGP30B60KD-EP is sourced from the original manufacturer or authorized distributors?

All IRGP30B60KD-EP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP30B60KD-EP meets industry standards.

7.What is the process for return or replacement of IRGP30B60KD-EP?

All IRGP30B60KD-EP units undergo pre-shipment inspection (PSI). If there is an issue with IRGP30B60KD-EP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGP30B60KD-EP part is unused and in its original packaging.

Return procedure for IRGP30B60KD-EP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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