Infineon Technologies IRGP35B60PD-EP

Overview

IRGP35B60PD-EP from Infineon (formerly International Rectifier) is a 600 V, 35 A NPT IGBT with co-packaged HEXFRED ultrafast soft-recovery diode in TO-247AD package. It delivers V_CE(on) = 1.85 V @ 22 A/15 V, 150 kHz max switching frequency, and minimal tail current for high-efficiency PFC and ZVS SMPS stages in telecom and UPS systems.

For engineers reviewing the IRGP35B60PD-EP datasheet, IRGP35B60PD-EP pinout, IRGP35B60PD-EP application, or IRGP35B60PD-EP equivalent, key selection criteria include its 0.41 °C/W IGBT R_θJC, 42 ns diode t_rr at 25°C, co-packaged diode integration, and suitability for parallel operation in high-current industrial power converters.

Technical Context

This IGBT employs Non-Punch-Through (NPT) technology with positive temperature coefficient for stable parallel operation and reduced thermal runaway risk. Its gate threshold voltage (V_GE(th)) is 3.0–5.0 V, and internal gate resistance is 1.7 Ω - enabling predictable drive design without external gate resistors in many cases.

The integrated HEXFRED diode provides soft reverse recovery (t_rr = 42–120 ns, Q_rr = 80–600 nC) and low V_F (1.30 V @ 15 A), minimizing switching loss and EMI in hard-switched topologies. Coes_eff(ER) = 179 pF ensures low energy-related output capacitance during turn-on transitions.

Key Specifications

Pinout & Package

Supplied in lead-free TO-247AD package with isolated mounting tab. Case-to-sink thermal resistance R_θCS = 0.24 °C/W on flat greased surface. Mounting torque: 10 lbf·in (1.1 N·m).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switch applications.

Compared with IXGN35N60B3 and STGW35H60DLF, IRGP35B60PD-EP uniquely combines co-pack HEXFRED soft recovery, NPT thermal stability, and 0.41 °C/W R_θJC - making it optimal for high-reliability, high-frequency telecom and UPS inverters where diode behavior directly impacts system efficiency and EMC compliance.

Availability

IRGP35B60PD-EP is available at Aetrix Electronics and suitable for telecom rectifiers, uninterruptible power supplies, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRGP35B60PD-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

This device belongs to the WARP2 series of high-performance IGBTs designed specifically for high-efficiency, high-frequency switched-mode power supplies and UPS inverters demanding low conduction and switching losses with robust thermal performance.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 3.3 Ω for characterization of switching losses at 125°C. For safe operation across temperature and voltage ranges, R_G should not exceed 22 Ω - as validated in the RBSOA test circuit (Fig. C.T.2) with V_CC = 480 V and V_p = 600 V. Higher values increase switching time and may compromise short-circuit ruggedness.

Can IRGP35B60PD-EP be used in zero-voltage switching (ZVS) topologies?

Yes - its minimal tail current, low C_{oes eff}(ER) = 179 pF, and soft-recovery diode make it well-suited for ZVS phase-shifted full-bridge and LLC resonant converters. The 150 kHz max switching frequency rating assumes proper gate drive and heatsinking, and measured E_total remains below 870 µJ at 125°C with 390 V bus.

Is the TO-247AD package electrically isolated?

No - the TO-247AD package has an electrically connected collector tab. The metal mounting surface is tied to the collector terminal, requiring insulating hardware (e.g., ceramic washer + thermal pad) when mounted to a grounded heatsink. This is confirmed by the "Mounting Torque" specification referencing direct screw attachment to the collector tab.

What diode is used in the reverse recovery characterization?

The datasheet explicitly states that all diode reverse recovery parameters (t_rr, Q_rr, I_RRM) were measured using the co-packaged HEXFRED diode - not an external part. The footnote references "Diode clamp used: 30ETH06" only for switching loss test circuits (C.T.3), not for diode characterization itself.