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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGP35B60PDPBF

Name: IRGP35B60PDPBF
Brand: Infineon Technologies
SKU: IRGP35B60PDPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGP35B60PDPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IRGP35B60PDPBF.pdf

Description:: IGBT NPT 600V 60A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRGP35B60PDPBF from Infineon (formerly International Rectifier) is a 600V, 35A NPT IGBT with co-packaged HEXFRED ultrafast soft-recovery diode in TO-247AC package. It delivers V_CE(on) = 1.85V @ 22A/15V, 150kHz max switching frequency, and minimal tail current for high-efficiency telecom/server SMPS and PFC circuits.

For engineers reviewing the IRGP35B60PDPBF datasheet, IRGP35B60PDPBF pinout, IRGP35B60PDPBF application, or IRGP35B60PDPBF equivalent, key selection factors include its 0.41°C/W IGBT R_θJC, 42ns diode t_rr at 25°C, parallel operation capability, and tight parameter distribution for consistent system-level performance.

Technical Context

This IGBT uses Non-Punch-Through (NPT) technology with positive temperature coefficient for stable parallel operation. Its gate threshold voltage (V_GE(th)) is 4.0V typ. with -10mV/°C tempco, enabling predictable turn-on across temperature.

The integrated HEXFRED diode provides soft reverse recovery (Q_rr = 80nC typ. @ 25°C, t_rr = 42ns), minimizing voltage overshoot and EMI in ZVS topologies. Switching losses are optimized via low C_ies (3715pF) and C_oes (265pF), supporting efficient operation up to 150kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600V - supports 400V DC bus designs with 50% safety margin in telecom/server SMPS
I_C @ T_C=25°C	60A - enables high-current single-device solutions without forced air cooling
V_CE(on) typ.	1.85V @ 22A/15V - reduces conduction loss vs. comparable MOSFETs in 10–100kHz range
E_off typ.	215µJ @ 22A/390V - enables lower heat sink requirements in high-frequency PFC stages
t_rr typ.	42ns @ 15A/200V/25°C - suppresses diode-induced voltage spikes in hard-switched converters
R_θJC (IGBT)	0.41°C/W - allows direct mounting to heatsink with minimal thermal interface resistance
Q_g typ.	160nC - determines gate driver power requirement and influences switching speed control

Pinout & Package

TO-247AC package with isolated tab (collector-connected), standard 3-pin layout for high-power discrete mounting. Thermal pad on collector side requires electrically insulating but thermally conductive interface material.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main current path input	Connected to high-side switch node; carries full load current and must be routed with low-inductance layout
Gate (G)	Control terminal	Requires low-impedance drive (R_G = 3.3Ω typical) to manage Q_g = 160nC and prevent oscillation
Emitter (E)	Current return path	Serves as common reference for gate drive and current sensing; must be low-inductance connection to minimize V_CE measurement error

Key Features

Feature	Design Value
NPT structure with positive V_CE(on) tempco	Enables stable current sharing in paralleled configurations without external ballasting resistors
Co-packaged HEXFRED diode	Reduces board space and parasitic inductance vs. discrete diode placement; soft recovery cuts EMI filter cost
Low tail current	Minimizes switching loss during turn-off transition, critical for efficiency in 50–150kHz PFC stages
Tighter parameter distribution	Reduces design margin requirements and improves batch-to-batch consistency in production SMPS assemblies
Lead-free and RoHS-compliant	Meets global environmental compliance mandates without derating or process change for assembly

Applications

Telecom Server SMPS

PFC Circuits

Use Scenario: Primary-side switching in 1–3kW telecom rectifiers and server PSUs operating at 100kHz.

IC Role / Device Role / Timing Role: High-voltage, high-current main switch in forward or half-bridge topology.

Use Value: 1.85V V_CE(on) and 215µJ E_off reduce total losses by ~12% vs. prior-gen 600V IGBTs at 22A load.

Use Scenario: Boost switch in active PFC front-end for industrial UPS and medical power systems.

IC Role / Device Role / Timing Role: Fast-switching, low-loss boost transistor handling 35A peak current at 65–150kHz.

Use Value: 42ns diode t_rr and soft recovery eliminate snubber networks, cutting BOM cost and layout area.

ZVS SMPS

Uninterruptible Power Supplies

Use Scenario: Resonant switch in LLC or phase-shifted full-bridge converters for data center PSUs.

IC Role / Device Role / Timing Role: Zero-voltage switched main device requiring low C_oes (265pF) and controlled turn-off.

Use Value: Coes eff. (ER) = 179pF ensures predictable energy storage during V_CE rise, enabling accurate ZVS timing design.

Use Scenario: Inverter-stage switching in line-interactive and online UPS systems delivering 2–5kVA output.

IC Role / Device Role / Timing Role: High-reliability, high-current switch in DC-AC H-bridge with 120A pulse rating.

Use Value: 120A I_CM and 150°C T_J rating support overload tolerance and extended thermal margin during battery backup mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN35N60B3	Higher V_CE(on) = 2.0V typ., lower Q_g = 130nC, same 600V/35A rating	Better suited for gate-drive-limited designs; slightly higher conduction loss	Prefer when gate driver output current is constrained below 2A peak
STMicroelectronics STGW35H60DLF	Integrated fast diode with t_rr = 55ns, R_θJC = 0.45°C/W, same TO-247 package	Higher diode recovery time increases snubber demand in ZVS circuits	Choose where diode softness is less critical than cost or local supply chain preference

Compared with IXGN35N60B3 and STGW35H60DLF, IRGP35B60PDPBF offers the lowest combined conduction + switching loss at 100–150kHz due to its 1.85V V_CE(on) and 42ns t_rr, making it optimal for efficiency-critical telecom and server SMPS.

Availability

IRGP35B60PDPBF is available at Aetrix Electronics and suitable for telecom server SMPS, PFC circuits, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRGP35B60PDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

This device belongs to Infineon's WARP2 series of high-frequency IGBTs, engineered specifically for efficiency-critical switching power supplies operating above 50kHz with integrated soft-recovery diodes.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 3.3Ω for characterization at 125°C. For robust operation across temperature, use 2.2–4.7Ω with ≥1W rating. Higher values increase switching time and E_on/E_off; lower values risk gate oscillation due to 1.7Ω internal R_G and PCB inductance.

Can IRGP35B60PDPBF replace a MOSFET in a 100kHz flyback converter?

No - this IGBT is not suitable for flyback topologies. Its minority-carrier nature causes excessive tail current and slow turn-off at light loads, leading to instability and loss. It is designed for hard-switched or resonant forward, half-bridge, and PFC boost stages where 22–35A continuous current and 100–150kHz operation are required.

Is the TO-247AC package electrically insulated?

No - the metal tab is internally connected to the collector terminal. Electrical isolation from the heatsink is mandatory using mica washers or ceramic insulators. The R_θCS = 0.24°C/W rating assumes a flat, greased interface surface; silicone grease must be applied uniformly to avoid thermal hotspots.

Does the diode share the same thermal path as the IGBT die?

Yes - both dies are mounted on the same copper base in the TO-247AC package, sharing the 0.41°C/W IGBT R_θJC and 1.7°C/W diode R_θJC paths. Thermal design must account for combined power dissipation (IGBT + diode) when calculating junction temperature, especially in PFC where diode conduction dominates during AC zero-crossings.

IRGP35B60PDPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 60 A

Current - Collector Pulsed (Icm):: 120 A

Vce(on) (Max) @ Vge, Ic:: 2.55V @ 15V, 35A

Power - Max:: 308 W

Switching Energy:: 220µJ (on), 215µJ (off)

Input Type:: Standard

Gate Charge:: 160 nC

Td (on/off) @ 25°C:: 26ns/110ns

Test Condition:: 390V, 22A, 3.3Ohm, 15V

Reverse Recovery Time (trr):: 42 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRGP35B60PDPBF FAQ

1.How can I place an order for IRGP35B60PDPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGP35B60PDPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGP35B60PDPBF reliable?

The price and inventory of IRGP35B60PDPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP35B60PDPBF is usually 5 days.

3.What payment methods are accepted for IRGP35B60PDPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP35B60PDPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGP35B60PDPBF?

IRGP35B60PDPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGP35B60PDPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGP35B60PDPBF?

For technical support, including IRGP35B60PDPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP35B60PDPBF requirements.

6.How does Aetrix verify that IRGP35B60PDPBF is sourced from the original manufacturer or authorized distributors?

All IRGP35B60PDPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP35B60PDPBF meets industry standards.

7.What is the process for return or replacement of IRGP35B60PDPBF?

All IRGP35B60PDPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGP35B60PDPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGP35B60PDPBF part is unused and in its original packaging.

Return procedure for IRGP35B60PDPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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