Infineon Technologies IRGP4062D-EPBF

Overview

IRGP4062D-EPBF from Infineon Technologies is a 600 V, 24 A (T_C = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery co-pack diode in TO-247AC package. It delivers low V_CE(on) (1.65 V typ. at 24 A, 15 V_GE, 25°C), 5 μs short-circuit SOA, and 175°C max junction temperature - designed for high-efficiency hard-switched industrial motor drives and UPS inverters.

For engineers reviewing the IRGP4062D-EPBF datasheet, IRGP4062D-EPBF pinout, IRGP4062D-EPBF application, or IRGP4062D-EPBF equivalent, key selection criteria include verified RBSOA squareness, clamped inductive load current rating (96 A), reverse recovery energy (621 μJ at 175°C), and thermal resistance (R_JC = 0.65°C/W for IGBT, 1.62°C/W for diode).

Technical Context

This trench-gate IGBT uses positive V_CE(on) temperature coefficient and low switching losses to enable stable parallel operation and predictable thermal derating. Its ultrafast soft-recovery diode minimizes voltage overshoot and EMI during freewheeling in bridge-leg configurations.

The device supports full-square RBSOA up to 480 V and 5 μs SCSOA at 400 V, validated under V_GE = +15 V to 0 V transition with 10 Ω gate resistor - enabling robust operation in overcurrent fault conditions without external desaturation detection.

Key Specifications

Pinout & Package

IRGP4062D-EPBF is housed in a TO-247AC package with isolated mounting tab (collector-connected). The package provides 0.65°C/W IGBT and 1.62°C/W diode thermal resistance to heatsink, and supports 10 lbf·in mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT with co-pack diode applications.

Compared with IXGN60N60A4 and STGW40H65DFB, IRGP4062D-EPBF offers optimal balance of low V_CE(on), verified 5 μs short-circuit ruggedness, and tight parameter spread - making it preferred for cost-sensitive, thermally constrained 5–15 kW industrial inverters where reliability under transient overload is critical.

Availability

IRGP4062D-EPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and induction heating systems requiring stable component supply and long-term manufacturing continuity.

Supply support for IRGP4062D-EPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's TRENCHSTOP™ 5 family - engineered for high-efficiency, high-reliability hard-switched applications demanding low conduction and switching losses, rugged SOA, and extended temperature operation.

FAQ

What is the maximum gate-emitter voltage rating for IRGP4062D-EPBF?

The absolute maximum continuous gate-emitter voltage is ±20 V, with transient rating up to ±30 V for ≤100 ns pulses. Exceeding ±20 V continuously risks gate oxide degradation and threshold voltage shift. Gate driver design must include clamping (e.g., Zener diodes) and ensure <100 ns overvoltage events remain within ±30 V limit per datasheet Figure CT4 test conditions.

Does IRGP4062D-EPBF require an external freewheeling diode?

No - it integrates an ultrafast soft-recovery co-pack diode rated for 24 A continuous forward current at T_C = 100°C and 96 A pulsed. This diode is electrically isolated from the IGBT die but shares the same package terminals (C and E), eliminating need for discrete diode placement and reducing PCB layout complexity in half-bridge and three-phase inverter legs.

How is short-circuit withstand time validated for this part?

Each unit undergoes 100% production test for I_LM (clamped inductive load current) at 96 A, confirming ≥5 μs short-circuit SOA under V_CC = 400 V, V_GE = +15 V to 0 V, and R_G = 10 Ω. Validation follows JEDEC JESD47 guidelines and is documented in Infineon Application Note AN-1086, with test waveforms captured using calibrated current probes and high-speed oscilloscopes.

Can IRGP4062D-EPBF be paralleled for higher current capacity?

Yes - its positive V_CE(on) temperature coefficient and tight parameter distribution (±5% V_CE(on), ±10% Q_g) enable stable current sharing without emitter ballast resistors. Successful parallel operation requires matched gate drive impedance (<5% variation), symmetrical PCB layout, and shared heatsink with uniform thermal interface - demonstrated in Infineon Reference Design RDHP-IGBT-TO247-2x.