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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGP4063D1-EPBF

Name: IRGP4063D1-EPBF
Brand: Infineon Technologies
SKU: IRGP4063D1-EPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGP4063D1-EPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IRGP4063D1-EPBF.pdf

Description:: IGBT 600V 100A 330W TO-247AD

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRGP4063D1-EPBF from Infineon (formerly International Rectifier) is a 600 V, 60 A (T_C = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery anti-parallel diode in TO-247AD package. It delivers 1.65 V typical V_CE(on) at 48 A/15 V_GE, supports 5 µs short-circuit withstand time, and operates up to 175°C junction temperature - deployed in industrial motor drives, UPS inverters, and welding power stages.

For engineers reviewing the IRGP4063D1-EPBF datasheet, IRGP4063D1-EPBF pinout, IRGP4063D1-EPBF application, or IRGP4063D1-EPBF equivalent, key selection criteria include its square RBSOA at 175°C, low 0.45 °C/W IGBT R_θJC, 192 A clamped inductive current capability, and soft reverse recovery (t_rr = 80 ns, Q_RR = 1000 nC max) enabling high-efficiency hard-switching topologies.

Technical Context

This IGBT uses a trench-gate field-stop structure optimized for 400–480 V DC-link applications. Its positive V_CE(on) temperature coefficient ensures stable current sharing in parallel configurations, while the monolithically integrated diode features soft recovery with <20 A peak reverse recovery current (I_RR) and 245 µJ reverse recovery energy (E_rec) at T_J = 175°C.

The device meets full square RBSOA at V_CC = 480 V and supports 5 µs short-circuit safe operating area (SCSOA) under V_GE = +15 V to 0 V transition with R_g = 50 Ω. Gate charge profile shows 100–150 nC total Q_g, with 40–60 nC Miller charge (Q_gc), enabling predictable turn-on/turn-off timing control in high-frequency PWM inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands 600 V collector-emitter blocking voltage with zero gate drive, suitable for 400 V DC-link systems with margin.
I_C @ T_C = 100°C	60 A - Continuous collector current rating at 100°C case temperature, defining thermal design envelope for heatsink sizing.
V_CE(on) typ.	1.65 V @ 48 A/15 V_GE/25°C - Low conduction loss enables >98% efficiency in 10–20 kHz motor drive inverters.
t_SC	≥5 µs - Short-circuit withstand time at V_CC = 400 V, enabling robust overcurrent protection without desaturation circuitry.
R_θJC (IGBT)	0.45 °C/W - Junction-to-case thermal resistance determines maximum power dissipation (170 W at T_C = 100°C).
E_rec	245 µJ @ T_J = 175°C - Diode reverse recovery energy directly impacts switching loss and EMI in hard-switched converters.
Q_g	100–150 nC - Total gate charge defines driver output current requirement (e.g., ≥15 A peak for 100 ns turn-on).

Pinout & Package

IRGP4063D1-EPBF is housed in a TO-247AD package - a 3-pin, single-island variant of TO-247 with isolated collector tab and non-isolated emitter/gate leads. The package provides enhanced creepage/clearance versus standard TO-247AC and supports direct mounting to heatsinks via M3 screw (1.1 N·m torque).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives ±20 V continuous gate drive; 100–150 nC total charge requires low-impedance driver path to minimize switching losses.
C (Collector)	High-side power terminal	Electrically isolated metal tab; carries full load current and must be thermally coupled to heatsink with thermal grease (R_θCS = 0.24 °C/W).
E (Emitter)	Power return and reference node	Shared emitter connection for IGBT and anti-parallel diode; serves as local ground reference for gate driver supply and current sensing.

Key Features

Feature	Design Value
Square RBSOA at 175°C	Supports 192 A clamped inductive current at V_CC = 480 V, enabling reliable operation under transient overloads without derating.
Ultrafast soft-recovery diode	80 ns t_rr, 20 A I_RR, and 245 µJ E_rec reduce snubber stress and EMI in bridge-leg commutation.
Positive V_CE(on) tempco	Enables natural current balancing in paralleled IGBTs without external emitter resistors or active current-sharing circuits.
5 µs SCSOA	Allows implementation of simple fixed-time desaturation detection for short-circuit protection in cost-sensitive industrial drives.
Lead-free, RoHS-compliant	Meets JEDEC J-STD-020 reflow profile (peak 260°C); compatible with standard lead-free PCB assembly processes.

Applications

Industrial Motor Drive

Uninterruptible Power Supply (UPS)

Use Scenario: Three-phase 15–30 kW variable-frequency drives powering HVAC compressors and conveyor belts.

IC Role / Device Role / Timing Role: Main inverter switch in 2-level topology operating at 8–16 kHz PWM frequency with sinusoidal current output.

Use Value: 1.65 V V_CE(on) and 0.45 °C/W R_θJC enable compact heatsink design while maintaining >97.5% system efficiency at full load.

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz sine wave output during grid failure.

IC Role / Device Role / Timing Role: Inverter-stage switch converting DC bus (380–400 V) to AC output; operates in 12–20 kHz hard-switched mode.

Use Value: 5 µs short-circuit withstand and square RBSOA ensure fault ride-through during output short events without device destruction.

Welding Power Source

Inverter-Based Solar String Inverter

Use Scenario: IGBT-based inverter welding machines generating 100–300 A DC output with high ripple suppression.

IC Role / Device Role / Timing Role: Primary DC–DC chopper switch in resonant or hard-switched topology; duty cycle modulated at 20–50 kHz.

Use Value: Soft-recovery diode minimizes voltage overshoot during freewheeling, reducing snubber losses and improving arc stability.

Use Scenario: 5–10 kW string inverters converting PV DC to grid-synchronized AC using transformerless topologies.

IC Role / Device Role / Timing Role: High-side switch in H-bridge or NPC configuration; subjected to repetitive 600 V blocking and fast di/dt commutation.

Use Value: 600 V V_CES rating with 175°C T_J(max) allows operation in unventilated enclosures with ambient up to 65°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-inverter applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN60N60C3	600 V/60 A, 1.8 V V_CE(on), 0.55 °C/W R_θJC, no integrated diode	Requires external ultrafast diode; higher conduction loss increases thermal load in high-duty-cycle operation	Preferred where discrete diode selection enables optimization for specific reverse recovery requirements
STMicroelectronics STGW60H65DFB	650 V/60 A, 1.75 V V_CE(on), 0.42 °C/W R_θJC, integrated diode with 100 ns t_rr	Higher voltage rating adds margin for 450 V DC-link systems but increases gate charge (170 nC) and switching loss	Selected when extended blocking margin and lower thermal resistance outweigh added switching energy penalty

Compared with IXGN60N60C3 and STGW60H65DFB, IRGP4063D1-EPBF offers the lowest V_CE(on) and best balance of conduction loss, thermal resistance, and diode softness - making it optimal for space-constrained 400 V industrial inverters requiring high efficiency and reliability.

Availability

IRGP4063D1-EPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and welding equipment requiring stable component supply across multi-year production cycles.

Supply support for IRGP4063D1-EPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's legacy High Voltage IGBT portfolio (originally developed by International Rectifier), engineered for rugged, high-power industrial inverters demanding high short-circuit robustness and thermal resilience.

FAQ

What is the maximum gate-emitter voltage rating for IRGP4063D1-EPBF?

The absolute maximum continuous gate-emitter voltage is ±20 V, with transient rating up to ±30 V for ≤100 ns pulses. Exceeding ±20 V continuously risks gate oxide degradation; gate drive circuits must include clamping (e.g., Zener diodes) to maintain reliability across temperature and lifetime.

Does IRGP4063D1-EPBF require a negative gate turn-off voltage?

No - the device is fully specified for 0 V to +15 V gate drive. Negative turn-off voltage is not required for reliable operation, though –5 V to –10 V may improve noise immunity in high-dV/dt environments. The gate threshold voltage (4.0–6.5 V) ensures robust noise margin with 0 V off-state.

How does the integrated diode differ from standard FRDs?

Its monolithic ultrafast soft-recovery diode achieves 80 ns t_rr and <20 A I_RR with minimal voltage overshoot due to tailored carrier lifetime control. Unlike discrete FRDs, it shares thermal path with the IGBT die, ensuring matched temperature tracking and eliminating thermal cycling mismatch in bridge legs.

Can IRGP4063D1-EPBF be paralleled for higher current capacity?

Yes - its positive V_CE(on) temperature coefficient enables stable current sharing without emitter resistors. Successful paralleling requires matched gate drive impedance (<5% variation), symmetrical layout, and shared heatsink mounting to maintain <2°C die-to-die temperature difference under full load.

IRGP4063D1-EPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 100 A

Current - Collector Pulsed (Icm):: 192 A

Vce(on) (Max) @ Vge, Ic:: 2.14V @ 15V, 48A

Power - Max:: 330 W

Switching Energy:: 1.4mJ (on), 1.1mJ (off)

Input Type:: Standard

Gate Charge:: 150 nC

Td (on/off) @ 25°C:: 60ns/160ns

Test Condition:: 400V, 48A, 10Ohm, 15V

Reverse Recovery Time (trr):: 80 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AD

IRGP4063D1-EPBF FAQ

1.How can I place an order for IRGP4063D1-EPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGP4063D1-EPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGP4063D1-EPBF reliable?

The price and inventory of IRGP4063D1-EPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP4063D1-EPBF is usually 5 days.

3.What payment methods are accepted for IRGP4063D1-EPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP4063D1-EPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGP4063D1-EPBF?

IRGP4063D1-EPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGP4063D1-EPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGP4063D1-EPBF?

For technical support, including IRGP4063D1-EPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP4063D1-EPBF requirements.

6.How does Aetrix verify that IRGP4063D1-EPBF is sourced from the original manufacturer or authorized distributors?

All IRGP4063D1-EPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP4063D1-EPBF meets industry standards.

7.What is the process for return or replacement of IRGP4063D1-EPBF?

All IRGP4063D1-EPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGP4063D1-EPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGP4063D1-EPBF part is unused and in its original packaging.

Return procedure for IRGP4063D1-EPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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