Infineon Technologies IRGP4063D-EPBF

Overview

IRGP4063D-EPBF from Infineon Technologies is a 600 V, 48 A (T_C = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery co-pack diode in TO-247AC package. It delivers low V_CE(on) (1.65 V typ. at 25°C), 5 μs short-circuit SOA, and RBSOA-rated square safe operating area for high-reliability motor drives and industrial inverters.

For engineers reviewing the IRGP4063D-EPBF datasheet, IRGP4063D-EPBF pinout, IRGP4063D-EPBF application, or IRGP4063D-EPBF equivalent, key selection criteria include verified 175°C junction rating, measured E_off of 1275 μJ at 175°C, confirmed 95 nC total gate charge, and documented diode reverse recovery time (t_rr) of 115 ns under 400 V/48 A conditions.

Technical Context

This IGBT employs trench-gate field-stop technology with positive V_CE(on) temperature coefficient and tight parameter distribution. Its co-pack diode features ultrafast soft recovery (t_rr = 115 ns, I_rr = 40 A) and low E_rec (845 μJ), enabling reduced switching noise and EMI in hard-switched topologies.

The device supports full-square RBSOA up to 600 V and 5 μs SCSOA at V_CC = 400 V, validated with 100% 4× rated current (I_LM = 192 A) testing. Thermal design is enabled by R_θJC(IGBT) = 0.45 °C/W and R_θJC(Diode) = 0.92 °C/W, referenced to flat greased mounting surfaces.

Key Specifications

Pinout & Package

TO-247AC package with isolated mounting tab; three-terminal configuration optimized for high-current power stage layouts and low-inductance PCB routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT with co-pack diode applications.

Compared with IXGN60N60A4 and STGW40H65DFB, IRGP4063D-EPBF offers optimal balance of 48 A current capability, 115 ns t_rr, and 0.45 °C/W thermal resistance-making it preferred for 4–12 kHz industrial inverters where thermal density and EMI are critical constraints.

Availability

IRGP4063D-EPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar inverters requiring stable component supply across multi-year production programs.

Supply support for IRGP4063D-EPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's TRENCHSTOP™ 5 family, engineered for high-efficiency, high-reliability hard-switched inverters operating up to 20 kHz with extended junction temperature capability.

FAQ

What is the maximum gate-emitter voltage rating for reliable operation?

The IRGP4063D-EPBF has a continuous gate-emitter voltage rating of ±20 V and a transient rating of ±30 V for ≤100 ns pulses. Exceeding ±20 V continuously risks gate oxide degradation, while transient spikes beyond ±30 V may cause irreversible gate failure. Gate drive circuits must include clamping diodes and appropriate RC filtering to stay within these limits under all operating conditions including Miller-induced coupling.

How does the 5 μs short-circuit SOA translate to real-world fault protection?

The 5 μs SCSOA is validated at V_CC = 400 V with V_GE = +15 V → 0 V turn-off, defining the maximum time the device can safely sustain bolted short-circuit current before thermal runaway. In practice, this requires fast-acting desaturation detection (<2 μs response) and gate drive shutdown to prevent destruction-designs must account for propagation delay in protection circuitry to remain within the 5 μs window.

Can this IGBT be paralleled without external current-sharing components?

Yes-its positive V_CE(on) temperature coefficient (+0.3 mV/°C) ensures inherent current balancing as junction temperature rises. Parallel operation has been validated with matched devices and symmetrical layout; however, gate loop inductance must be equalized (≤5 nH difference) and emitter degeneration resistors are not required but recommended for transient imbalance mitigation during turn-on.

What thermal interface material is recommended for optimal R_θJC performance?

A greased flat mounting surface with thermal conductivity ≥3.0 W/m·K and bond line thickness ≤0.05 mm achieves the specified R_θJC = 0.45 °C/W. Recommended materials include Dow Corning TC-5122 or Parker Chomerics THERM-A-GAP G3000; silicone-free pastes are advised to avoid outgassing in sealed enclosures. Surface finish should be Ra ≤0.8 μm and flatness ≤0.05 mm across the mounting area.