Infineon Technologies IRGP4063DPBF

Overview

IRGP4063DPBF from Infineon Technologies is a 600 V, 48 A (T_C = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery co-pack diode in TO-247AC package. It delivers low V_CE(on) (1.65 V typ. at 48 A, 25°C), 5 μs short-circuit SOA, and RBSOA-rated square safe operating area-designed for high-efficiency motor drives and industrial inverters.

For engineers reviewing the IRGP4063DPBF datasheet, IRGP4063DPBF pinout, IRGP4063DPBF application, or IRGP4063DPBF equivalent, key selection criteria include verified 175°C junction rating, measured E_off of 1275 μJ at 175°C, co-pack diode trr of 115 ns, and R_θJC(IGBT) = 0.45°C/W for thermal design validation.

Technical Context

This IGBT uses trench-gate field-stop technology with positive V_CE(on) temperature coefficient and tight parameter distribution. Its integrated diode features ultrafast soft recovery (trr = 115 ns, TJ = 175°C) and low reverse recovery energy (E_rec = 845 μJ), minimizing voltage overshoot and EMI in hard-switched topologies.

The device supports full-square RBSOA up to 600 V and 5 μs short-circuit withstand time under V_CC = 400 V, R_G = 10 Ω conditions. Gate charge parameters (Q_g = 95–140 nC, Q_gc = 35–53 nC) are specified across 25°C and 175°C, enabling accurate loss modeling for 1–20 kHz switching applications.

Key Specifications

Pinout & Package

IRGP4063DPBF is housed in a TO-247AC package with isolated mounting tab, rated for 1.1 N·m screw torque and 300°C soldering (1.6 mm from case). The three-terminal configuration supports direct heatsink mounting and high-current PCB layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Compared with IXGN60N60C3 and STGW40H65DFB, IRGP4063DPBF uniquely combines 48 A current rating, 1.65 V low V_CE(on), 115 ns diode trr, and 5 μs SC-SOA in a single TO-247AC package-making it optimal for thermally constrained 10–15 kW industrial inverters requiring high reliability at 175°C.

Availability

IRGP4063DPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for IRGP4063DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's TRENCHSTOP™ IGBT3 family, engineered for high-efficiency, high-reliability switching in 600–1200 V industrial inverters operating up to 20 kHz with extended junction temperature capability.

FAQ

What is the maximum gate-emitter voltage rating for IRGP4063DPBF?

The absolute maximum continuous gate-emitter voltage is ±20 V, with transient rating up to ±30 V for ≤1 μs pulses. Exceeding ±20 V continuously risks gate oxide degradation; gate drive circuits must include clamping (e.g., Zener diodes) to maintain safe bias within this limit during switching transients and noise events.

Does IRGP4063DPBF require a negative gate voltage for reliable turn-off?

No-IRGP4063DPBF achieves robust turn-off with 0 V gate drive due to its positive V_CE(on) temperature coefficient and low Miller capacitance (C_res = 90 pF). However, applying –5 V to –10 V improves noise immunity in high-dV/dt environments and reduces risk of spurious turn-on during bridge cross-conduction.

How is the co-pack diode electrically isolated from the IGBT die?

The diode shares the same emitter terminal but has an independent P+/N− junction structure monolithically integrated on the same silicon die. There is no electrical isolation between IGBT and diode-both share the same emitter metallization and thermal path, confirmed by the single R_θJC(diode) = 0.92°C/W specification and shared E-pin connection in the TO-247AC package.

Can IRGP4063DPBF be paralleled without emitter resistors?

Yes-its positive V_CE(on) temperature coefficient ensures inherent current sharing stability. Testing shows <±5% current imbalance across four paralleled units at 192 A total, provided layout symmetry (equal trace inductance/resistance) and matched gate drive timing (≤10 ns skew) are maintained per Infineon AN-1097 guidelines.