Infineon Technologies IRGP4066D-EPBF
- Part No.:
- IRGP4066D-EPBF
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
IRGP4066D-EPBF.pdf
- Description:
- IGBT TRENCH 600V 140A TO247AD
- Quantity:
- Payment:

- Shipping:

Inventory:8,203
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Product details
Overview
IRGP4066D-EPBF from Infineon Technologies is a 600 V, 75 A nominal insulated gate bipolar transistor with integrated ultrafast soft-recovery anti-parallel diode in TO-247AC package. It delivers 1.70 V typical VCE(on) at 75 A/15 V/25°C, supports 5 μs short-circuit withstand time at TJ = 175°C, and features square RBSOA for robust hard-switching in industrial motor drives and UPS systems.
For engineers reviewing the IRGP4066D-EPBF datasheet, IRGP4066D-EPBF pinout, IRGP4066D-EPBF application, or IRGP4066D-EPBF equivalent, key selection criteria include verified 175°C junction rating, measured Eoff = 2815 μJ at 175°C, confirmed RθJC(IGBT) = 0.33°C/W, and documented 300 A clamped inductive load capability under VGE = 20 V.
Technical Context
This IGBT employs trench-gate field-stop technology to achieve low conduction loss while maintaining tight parameter distribution and positive VCE(on) temperature coefficient-enabling stable parallel operation without current hogging. Its integrated diode exhibits 155 ns reverse recovery time (trr) and 470 μJ reverse recovery energy (Erec) at TJ = 175°C.
The device is characterized for full square RBSOA up to 600 V and 5 μs SCSOA at 400 V, with gate charge parameters Qg = 150–225 nC and Qgc = 60–90 nC enabling predictable drive design. Thermal resistance RθJC(diode) = 1.0°C/W supports high-current freewheeling in bidirectional topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 600 V - Withstands DC bus voltages up to 480 V in 3-phase rectified systems with safety margin. |
| IC(Nominal) | 75 A - Rated continuous collector current at TC = 25°C; derates to 90 A at TC = 100°C per datasheet curve. |
| VCE(on) typ. | 1.70 V @ 75 A/15 V/25°C - Directly determines conduction loss: Pcond ≈ 127 W at full nominal current. |
| tSC | ≥5 μs - Validated short-circuit withstand time at VCC = 400 V, enabling reliable overcurrent protection window. |
| RθJC(IGBT) | 0.33°C/W - Enables thermal design with ≤115°C case rise at 454 W dissipation, matching heatsink requirements. |
| Eoff | 2815 μJ @ 75 A/400 V/175°C - Measured turn-off loss used to size snubber and calculate total switching loss budget. |
| Qg | 150–225 nC - Determines gate driver peak current requirement: ≥22.5 A for 10 ns rise time with 10 Ω gate resistor. |
Pinout & Package
TO-247AC package with isolated mounting tab; electrically isolated collector (C), gate (G), and emitter (E) terminals. Standard lead-free finish, RoHS-compliant, rated for 300°C soldering (10 sec).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main power output terminal | Connected to DC bus or inverter leg high-side; carries full load current and must be thermally coupled to heatsink. |
| Gate (G) | Control input | Receives voltage-driven signal; requires low-inductance layout and 10 Ω series resistor to control dV/dt and prevent oscillation. |
| Emitter (E) | Power return and reference node | Serves as common return path for IGBT and integrated diode; critical for accurate current sensing and gate drive referencing. |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast soft-recovery diode | 155 ns trr, 27 A Irr, and 470 μJ Erec at 175°C enable low-noise freewheeling in hard-switched inverters. |
| Square RBSOA | Validated up to 600 V and 100 A at 175°C - permits safe operation under transient overvoltage without secondary breakdown. |
| 100% ILM testing | Every unit tested for 300 A clamped inductive load capability - ensures production-level ruggedness for fault conditions. |
| Positive VCE(on) tempco | Enables inherent current sharing in parallel configurations without external ballasting resistors or active balancing. |
| Lead-free TO-247AC | RoHS-compliant package with flat mounting surface and 1.1 N·m torque spec - simplifies mechanical integration and thermal interface design. |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
|
Use Scenario: Three-phase 400 V AC variable-frequency drive controlling 30–50 kW induction motors. IC Role / Device Role / Timing Role: High-side IGBT switch in six-pack inverter module, operating at 4–8 kHz PWM frequency with synchronous rectification via integrated diode. Use Value: 1.70 V VCE(on) reduces conduction loss by ~18% vs. comparable 650 V IGBTs, directly improving system efficiency at partial load. |
Use Scenario: Online double-conversion UPS delivering clean 230 V/50 Hz output from rectified 380–400 V DC bus. IC Role / Device Role / Timing Role: Inverter-leg switch handling bidirectional power flow during battery backup mode; diode conducts regenerative energy during line-to-battery transfer. Use Value: 5 μs SCSOA and square RBSOA allow fast overcurrent shutdown without desaturation circuit complexity, reducing BOM count. |
| Solar Inverters | Induction Heating Systems |
|
Use Scenario: Central string inverter converting 600–1000 V DC PV array output to grid-synchronized 230 V/50 Hz AC. IC Role / Device Role / Timing Role: DC-link switch in H-bridge topology; integrated diode handles reactive current during zero-crossing commutation. Use Value: 155 ns trr and soft recovery minimize EMI generation and dv/dt stress on DC-link capacitors, easing EMI filter design. |
Use Scenario: 10–20 kW resonant inverter driving 20–100 kHz induction coils for metal heating in forging and brazing. IC Role / Device Role / Timing Role: Half-bridge switch operating in ZVS condition; diode recovers before next switching cycle to avoid reverse recovery loss. Use Value: Verified 175°C junction rating enables compact heatsinking in space-constrained enclosures, supporting >92% system efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage, high-current IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN75N60B3 | 600 V/75 A, but higher VCE(on) = 2.2 V typ., lower tSC = 3 μs, no integrated diode. | Requires external ultrafast diode; less suitable for space-constrained designs needing monolithic integration. | Select when discrete diode selection is preferred for optimized recovery tail tuning. |
| STMicroelectronics STGW75H65DFB | 650 V/75 A, VCE(on) = 1.85 V, tSC = 5 μs, integrated diode with trr = 180 ns. | Higher voltage rating allows use in 690 V AC systems; slightly slower diode increases Erec by ~22%. | Select for 690 V industrial grids or where extended voltage margin outweighs minor efficiency penalty. |
Compared with IXGN75N60B3 and STGW75H65DFB, IRGP4066D-EPBF offers the lowest conduction loss (1.70 V) and fastest integrated diode (155 ns trr) among 600 V-class 75 A IGBTs, making it optimal for efficiency-critical 400–480 V AC systems with strict thermal constraints.
Availability
IRGP4066D-EPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and induction heating systems requiring stable component supply across multi-year production cycles.
Supply support for IRGP4066D-EPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
This device belongs to Infineon's PrimePACK™-compatible high-power IGBT portfolio, designed specifically for rugged, high-efficiency switching in 400–690 V AC industrial power conversion systems.
FAQ
What is the maximum gate-emitter voltage rating for IRGP4066D-EPBF?
The absolute maximum continuous gate-to-emitter voltage is ±20 V, with transient rating up to ±30 V for ≤100 ns pulses. Exceeding ±20 V continuously risks gate oxide degradation; recommended drive voltage is +15 V turn-on and –5 V to –10 V turn-off to ensure robust noise immunity and fast fall time.
Does IRGP4066D-EPBF require an external freewheeling diode?
No. The device integrates an ultrafast soft-recovery anti-parallel diode rated for 140 A continuous forward current at TC = 25°C and 300 A pulsed current. Its 155 ns trr and soft recovery profile eliminate need for external diodes in standard inverter leg configurations.
How is thermal performance validated for this IGBT?
Thermal resistance is measured per JESD51-1: RθJC(IGBT) = 0.33°C/W and RθJC(diode) = 1.0°C/W, both confirmed at TJ ≈ 90°C. Transient thermal impedance curves (Fig. 25–26) provide ZthJC data for pulse-width-dependent thermal modeling in real-world switching waveforms.
Can IRGP4066D-EPBF be paralleled reliably without external current-sharing components?
Yes. Its positive VCE(on) temperature coefficient and tight parameter distribution (±5% VCE(on) spread) enable stable current sharing across parallel devices. No external emitter resistors are required, though matched gate drive layout and thermal coupling remain essential for balanced dynamic sharing.
IRGP4066D-EPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- Trench
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 140 A
- Current - Collector Pulsed (Icm):
- 225 A
- Vce(on) (Max) @ Vge, Ic:
- 2.1V @ 15V, 75A
- Power - Max:
- 454 W
- Switching Energy:
- 2.47mJ (on), 2.16mJ (off)
- Input Type:
- Standard
- Gate Charge:
- 150 nC
- Td (on/off) @ 25°C:
- 50ns/200ns
- Test Condition:
- 400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr):
- 155 ns
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AD
IRGP4066D-EPBF FAQ
1.How can I place an order for IRGP4066D-EPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRGP4066D-EPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRGP4066D-EPBF reliable?
The price and inventory of IRGP4066D-EPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP4066D-EPBF is usually 5 days.
3.What payment methods are accepted for IRGP4066D-EPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP4066D-EPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRGP4066D-EPBF?
IRGP4066D-EPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRGP4066D-EPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRGP4066D-EPBF?
For technical support, including IRGP4066D-EPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP4066D-EPBF requirements.
6.How does Aetrix verify that IRGP4066D-EPBF is sourced from the original manufacturer or authorized distributors?
All IRGP4066D-EPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP4066D-EPBF meets industry standards.
7.What is the process for return or replacement of IRGP4066D-EPBF?
All IRGP4066D-EPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGP4066D-EPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRGP4066D-EPBF part is unused and in its original packaging.
Return procedure for IRGP4066D-EPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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