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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGP4066-EPBF

Name: IRGP4066-EPBF
Brand: Infineon Technologies
SKU: IRGP4066-EPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGP4066-EPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IRGP4066-EPBF.pdf

Description:: IGBT 600V 140A 454W TO247AD

Quantity:: RFQ Add To RFQ list

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Inventory:7,883

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Product details

Overview

IRGP4066-EPBF from Infineon Technologies is a 600 V, 75 A nominal insulated gate bipolar transistor (IGBT) in TO-247AC package, featuring trench IGBT technology, 5 μs short-circuit SOA, 175 °C max junction temperature, and 1.7 V typical V_CE(on) at 75 A/15 V/25 °C - used in industrial motor drives and UPS inverters.

For engineers reviewing the IRGP4066-EPBF datasheet, IRGP4066-EPBF pinout, IRGP4066-EPBF application, or IRGP4066-EPBF equivalent, key selection criteria include V_CE(on) temperature coefficient, RBSOA squareness, clamped inductive load rating (300 A), gate charge (150–225 nC), and thermal resistance (R_θJC = 0.33 °C/W).

Technical Context

This IGBT employs trench-gate field-stop structure to achieve low conduction loss and controlled tail current, enabling efficient operation up to 20 kHz in hard-switched topologies. Its positive V_CE(on) temperature coefficient ensures stable parallel operation without external current-sharing resistors.

The device integrates full-square RBSOA and 5 μs short-circuit withstand capability under V_CC = 400 V, V_GE = +15 V → 0 V, with tight parameter distribution verified by 100% I_LM testing - critical for high-reliability industrial power conversion stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - supports DC bus voltages up to 480 V in three-phase rectified systems with margin.
I_C(Nominal)	75 A - rated continuous collector current at T_C = 25 °C, defining baseline conduction capability.
V_CE(on) typ.	1.7 V @ 75 A, 15 V, 25 °C - directly determines conduction loss (P_cond ≈ 127.5 W at full load).
t_SC	≥5 μs - enables robust protection response in fault conditions without desaturation circuitry delay.
R_θJC	0.33 °C/W - defines minimum heatsink requirement for 454 W dissipation at T_C = 25 °C.
Q_g	150–225 nC - sets gate driver peak current demand (e.g., ≥22.5 A for 10 ns rise time).
E_off typ.	2155–3040 μJ @ 75 A, 400 V, 25 °C - quantifies turn-off energy loss impacting thermal design at switching frequencies >5 kHz.

Pinout & Package

Package: TO-247AC - industry-standard 3-lead through-hole power package with isolated mounting hole, optimized for low-inductance layout and mechanical stability on heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input terminal	Receives voltage-controlled signal (±20 V max); requires low-impedance drive due to 150–225 nC total gate charge.
C (Collector)	High-side power output node	Connects to DC bus or inductive load; rated for 600 V blocking and 300 A clamped inductive surge.
E (Emitter)	Power return and reference node	Serves as common source for gate drive return path; layout must minimize inductance to suppress voltage spikes during switching.

Key Features

Feature	Design Value
Low V_CE(on) trench IGBT technology	1.7 V typical at 75 A reduces conduction loss by ~25% vs. planar IGBTs of same voltage class.
Full-square RBSOA	Enables reliable operation at high V_CE and high I_C simultaneously - essential for snubberless designs.
100% I_LM tested	Guarantees 300 A clamped inductive load capability per unit - eliminates batch-level screening uncertainty.
Positive V_CE(on) temp. coefficient	Ensures inherent current sharing in paralleled configurations without external balancing components.
Tight parameter distribution	Reduces gate drive design margin requirements and improves system-level efficiency predictability.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage converting DC bus to variable-frequency AC for 15–30 kW induction motors.

IC Role / Device Role / Timing Role: Main switching element in each leg of the inverter bridge, operating at 4–16 kHz PWM frequency.

Use Value: 5 μs short-circuit SOA allows safe shutdown during rotor lock or cable fault without destructive failure.

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz sine wave output during grid outage.

IC Role / Device Role / Timing Role: Inverter-stage switch handling bidirectional power flow between battery bank and AC output.

Use Value: 175 °C max junction temperature supports derated operation in sealed, fan-limited enclosures.

Solar Inverters

Induction Heating Systems

Use Scenario: String inverter DC–AC stage interfacing photovoltaic arrays to utility grid.

IC Role / Device Role / Timing Role: High-efficiency switching device in H-bridge topology, operating with unipolar modulation.

Use Value: Low 1.7 V V_CE(on) minimizes conduction loss at partial-load conditions typical of daytime solar generation profiles.

Use Scenario: Resonant half-bridge inverter driving series-tuned LC tank at 20–100 kHz for metal heating.

IC Role / Device Role / Timing Role: Hard-switched power switch managing high di/dt and voltage transients in resonant circuits.

Use Value: Square RBSOA permits operation near voltage and current limits simultaneously - critical for high-power density designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN75N60B3	600 V, 75 A, 2.2 V V_CE(on), 150 nC Q_g, TO-247AD package	Higher V_CE(on) increases conduction loss; lower Q_g eases gate drive but reduces short-circuit ruggedness (3 μs t_SC)	Select when gate drive simplicity outweighs conduction loss sensitivity and fault tolerance.
STMicroelectronics STGW75H65DFB	650 V, 75 A, 1.8 V V_CE(on), 200 nC Q_g, TO-247 long leads	Higher voltage rating adds margin for 600 V systems; higher Q_g demands stronger gate driver; no published t_SC spec	Prefer for designs requiring extended voltage headroom and where gate drive strength is available.

Compared with IXGN75N60B3 and STGW75H65DFB, IRGP4066-EPBF offers the best balance of low V_CE(on), proven 5 μs short-circuit ruggedness, and tight parameter spread - making it optimal for high-reliability industrial inverters where thermal and fault margins are constrained.

Availability

IRGP4066-EPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and induction heating systems requiring stable component supply and long-term manufacturing continuity.

Supply support for IRGP4066-EPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The IRGP4066-EPBF belongs to Infineon's legacy "IR" high-power IGBT portfolio, engineered specifically for rugged, high-efficiency industrial inverters operating at elevated junction temperatures and demanding fault conditions.

FAQ

What is the maximum allowable gate-to-emitter voltage for IRGP4066-EPBF?

The absolute maximum continuous gate-to-emitter voltage is ±20 V, with transient rating up to ±30 V for ≤100 ns pulses. Exceeding ±20 V continuously risks gate oxide degradation; recommended gate drive is +15 V turn-on and –5 V to –10 V turn-off to ensure fast, reliable switching and noise immunity.

Does IRGP4066-EPBF include an integrated anti-parallel diode?

No, IRGP4066-EPBF is a discrete IGBT die in TO-247AC package with no integrated freewheeling diode. External ultrafast or soft-recovery diodes (e.g., IDW75E60, DSEPxx-12A) must be used in anti-parallel configuration for inductive load commutation and reverse recovery management.

How does the 175 °C maximum junction temperature impact thermal design?

A 175 °C T_J(max) allows higher power density and reduced heatsink size compared to 150 °C-rated devices. With R_θJC = 0.33 °C/W, the case temperature must be held ≤115 °C to maintain 175 °C junction limit at full 454 W dissipation - requiring forced-air or liquid cooling in most 75 A applications.

Is IRGP4066-EPBF lead-free and RoHS compliant?

Yes, IRGP4066-EPBF is lead-free (PbF) and RoHS compliant per EU Directive 2011/65/EU. The "-EPbF" suffix explicitly denotes lead-free packaging; soldering temperature is rated to 300 °C for 10 seconds at 1.6 mm from case, consistent with standard Pb-free reflow profiles.

IRGP4066-EPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 140 A

Current - Collector Pulsed (Icm):: 225 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 75A

Power - Max:: 454 W

Switching Energy:: 2.47mJ (on), 2.16mJ (off)

Input Type:: Standard

Gate Charge:: 150 nC

Td (on/off) @ 25°C:: 50ns/200ns

Test Condition:: 400V, 75A, 10Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AD

IRGP4066-EPBF FAQ

1.How can I place an order for IRGP4066-EPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGP4066-EPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGP4066-EPBF reliable?

The price and inventory of IRGP4066-EPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP4066-EPBF is usually 5 days.

3.What payment methods are accepted for IRGP4066-EPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP4066-EPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGP4066-EPBF?

IRGP4066-EPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGP4066-EPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGP4066-EPBF?

For technical support, including IRGP4066-EPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP4066-EPBF requirements.

6.How does Aetrix verify that IRGP4066-EPBF is sourced from the original manufacturer or authorized distributors?

All IRGP4066-EPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP4066-EPBF meets industry standards.

7.What is the process for return or replacement of IRGP4066-EPBF?

All IRGP4066-EPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGP4066-EPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGP4066-EPBF part is unused and in its original packaging.

Return procedure for IRGP4066-EPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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