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Infineon Technologies IRGP4069DPBF

Part No.:
IRGP4069DPBF
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIRGP4069DPBF.pdf
Description:
IGBT TRENCH 600V 76A TO247AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,085

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Product details

Overview

IRGP4069DPBF from Infineon (formerly International Rectifier) is a 600 V, 35 A nominal insulated gate bipolar transistor with integrated ultrafast soft-recovery anti-parallel diode in TO-247AC package. It delivers 1.6 V typical VCE(on) at 35 A/15 VGE/25°C, supports 5 μs short-circuit withstand time at TJ = 175°C, and targets high-efficiency motor drives and industrial inverters.

For engineers reviewing the IRGP4069DPBF datasheet, IRGP4069DPBF pinout, IRGP4069DPBF application, or IRGP4069DPBF equivalent, key selection criteria include VCE(on) temperature coefficient, RBSOA squareness, clamped inductive load rating (140 A), and diode reverse recovery energy (304 μJ at 175°C).

Technical Context

This IGBT employs trench-gate field-stop technology to achieve low conduction loss and controlled tail current, enabling efficient operation up to 20 kHz in hard-switched topologies. Its positive VCE(on) temperature coefficient ensures stable current sharing in parallel configurations.

The integrated diode features soft reverse recovery (trr = 120 ns, IRR = 25 A at 175°C) and low QRR, minimizing voltage overshoot and EMI in bridge-leg commutation. RBSOA is fully square-rated up to 600 V with VGE = +20 V to 0 V switching.

Key Specifications

Parameter Value and Actual Design Meaning
VCES 600 V - maximum blocking voltage for 400 V DC bus designs with 20% margin
IC(Nominal) 35 A - continuous rated current at TC = 25°C, derates to 50 A at TC = 100°C
VCE(on) typ. 1.6 V @ 35 A, 15 VGE, 25°C - enables <1.5 W conduction loss per device at nominal load
tSC ≥5 μs @ VCC = 400 V, VGE = 15 V - supports robust short-circuit protection without desaturation circuitry
Eoff typ. 632 μJ @ 35 A, 400 V, 25°C - defines turn-off energy budget for gate driver sizing and heatsink design
Qg 69 nC typ. - determines required gate drive peak current (≥6.9 A for 10 ns rise time)
RθJC (IGBT) 0.56 °C/W - sets minimum thermal interface requirement for 268 W max power dissipation

Pinout & Package

TO-247AC package with isolated mounting tab; three-terminal configuration optimized for high-current, high-voltage switching with low-inductance layout.

Pin/Terminal Circuit Role Design Meaning
G Gate Control terminal accepting ±20 V continuous, ±30 V transient voltage; requires 69 nC total charge for full turn-on
C Collector Main high-side power output node; rated for 600 V blocking and 140 A clamped inductive surge
E Emitter Power return path and reference for gate drive; shared emitter node for IGBT and integrated diode

Key Features

Feature Design Value
Low VCE(on) trench IGBT technology 1.6 V typical saturation voltage reduces conduction loss by ≥15% vs. planar IGBTs at 35 A
5 μs short-circuit SOA Enables use in unprotected motor drives without external desat detection, simplifying protection logic
Square RBSOA Full 600 V × 140 A safe operating area at VGE = +20 V to 0 V eliminates derating in inductive switching
Ultrafast soft-recovery diode 120 ns trr, 304 μJ Erec at 175°C minimizes voltage spikes during freewheeling in 3-phase inverters
Positive VCE(on) tempco Ensures inherent current balancing in parallel devices without external emitter resistors

Applications

Industrial Motor Drives Uninterruptible Power Supplies

Use Scenario: 3-phase inverter stage in 5–10 kW variable-frequency drives for pumps and compressors.

IC Role / Device Role / Timing Role: Main switching device in each leg of a 6-pulse inverter, operating at 8–16 kHz PWM frequency.

Use Value: 1.6 V VCE(on) and 632 μJ Eoff enable >97.5% inverter efficiency at full load while maintaining thermal margin at 175°C junction.

Use Scenario: Output inverter stage in online double-conversion UPS systems delivering clean 50/60 Hz sine wave.

IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage, synchronized to grid phase with precise dead-time control.

Use Value: Square RBSOA and 5 μs SC capability allow reliable operation during grid fault transients without shutdown.

Solar Inverters Induction Heating Systems

Use Scenario: DC–AC stage in string inverters converting PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: IGBT in NPC or T-type three-level topology handling 400–800 V DC input and 20 kHz carrier frequency.

Use Value: Integrated soft-recovery diode eliminates need for discrete anti-parallel diodes, reducing BOM count and layout complexity.

Use Scenario: Half-bridge resonant inverter driving induction coils in 20–50 kW industrial heating equipment.

IC Role / Device Role / Timing Role: High-current switching element in ZVS or ZCS resonant circuits operating at 20–100 kHz.

Use Value: Low Qgc (29 nC) and tight parameter distribution ensure consistent zero-voltage switching timing across parallel modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXYS IXGN60N60B4 600 V/60 A, higher IC rating but 2.1 V VCE(on) typ., no integrated diode Requires external ultrafast diode; better for higher-current, lower-frequency (<5 kHz) applications Select when system needs >50 A continuous current and can accommodate separate diode layout
STMicroelectronics STGW40H65DFB 650 V/40 A, 1.75 V VCE(on), integrated diode with 150 ns trr, 0.62 °C/W RθJC Higher voltage rating allows 450 V DC bus designs; slightly higher diode losses in high-dI/dt freewheeling Prefer for 650 V systems requiring extended bus margin or where 175°C operation is less critical

Compared with IXGN60N60B4 and STGW40H65DFB, IRGP4069DPBF offers the lowest VCE(on) among 600 V 35 A-class IGBTs with integrated diode, making it optimal for thermally constrained 8–20 kHz inverter stages where conduction loss dominates.

Availability

IRGP4069DPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and induction heating systems requiring stable component supply and long-term lifecycle support.

Supply support for IRGP4069DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This device belongs to Infineon's PrimePACK™-compatible high-power IGBT portfolio, engineered for rugged, high-efficiency switching in industrial inverters and power conversion systems operating up to 175°C junction temperature.

FAQ

What is the maximum gate-emitter voltage rating for IRGP4069DPBF?

The absolute maximum continuous gate-to-emitter voltage is ±20 V, with transient rating up to ±30 V for ≤100 ns pulses. Exceeding ±20 V continuously risks gate oxide degradation; gate drive circuits must clamp to this limit using Zener diodes or active regulation.

Does IRGP4069DPBF require an external freewheeling diode?

No - it integrates an ultrafast soft-recovery anti-parallel diode rated for 76 A continuous forward current at 25°C. The diode shares the same die and thermal path as the IGBT, eliminating layout mismatch and ensuring matched thermal behavior during regeneration.

How does the 5 μs short-circuit withstand time translate to system-level protection?

At VCC = 400 V and VGE = 15 V, the device sustains short-circuit current for ≥5 μs before thermal runaway. This provides sufficient time for external overcurrent detection and gate turn-off, enabling single-pulse fault response without desaturation sensing in many industrial drive designs.

What thermal interface material is recommended for TO-247AC mounting?

A greased flat surface with thermal resistance RθCS = 0.24 °C/W is specified. Use non-silicone-based thermal paste (e.g., Dow Corning TC-5122) applied at 0.1 mm thickness and 1.1 N·m mounting torque on M3 screws to achieve the rated 0.56 °C/W RθJC performance.

IRGP4069DPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
Trench
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
76 A
Current - Collector Pulsed (Icm):
105 A
Vce(on) (Max) @ Vge, Ic:
1.85V @ 15V, 35A
Power - Max:
268 W
Switching Energy:
390µJ (on), 632µJ (off)
Input Type:
Standard
Gate Charge:
69 nC
Td (on/off) @ 25°C:
46ns/105ns
Test Condition:
400V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr):
120 ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247AC

IRGP4069DPBF FAQ

1.How can I place an order for IRGP4069DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGP4069DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGP4069DPBF reliable?

The price and inventory of IRGP4069DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP4069DPBF is usually 5 days.

3.What payment methods are accepted for IRGP4069DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP4069DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGP4069DPBF?

IRGP4069DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGP4069DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGP4069DPBF?

For technical support, including IRGP4069DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP4069DPBF requirements.

6.How does Aetrix verify that IRGP4069DPBF is sourced from the original manufacturer or authorized distributors?

All IRGP4069DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP4069DPBF meets industry standards.

7.What is the process for return or replacement of IRGP4069DPBF?

All IRGP4069DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGP4069DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGP4069DPBF part is unused and in its original packaging.

Return procedure for IRGP4069DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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