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Infineon Technologies IRGP4086PBF

Part No.:
IRGP4086PBF
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIRGP4086PBF.pdf
Description:
IGBT 300V 70A 160W TO247AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,670

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Product details

Overview

IRGP4086PBF from Infineon Technologies (formerly International Rectifier) is a 300 V, 70 A, n-channel trench IGBT optimized for sustain and energy recovery circuits in plasma display panel (PDP) drivers. It delivers 1.90 V typical VCE(on) at 70 A and 150 °C junction temperature, with 1075 μJ EPULSE at 240 V and 150 °C, enabling high-efficiency PDP sustain discharge.

For engineers reviewing the IRGP4086PBF datasheet, IRGP4086PBF pinout, IRGP4086PBF application, or IRGP4086PBF equivalent, key selection criteria include its low conduction loss at high junction temperature, robust repetitive peak current capability (250 A), and thermal resistance RθJC of 0.8 °C/W - critical for compact, high-density PDP sustain module designs.

Technical Context

This IGBT employs advanced trench gate structure with field-stop layer to minimize VCE(on) and switching losses simultaneously. Its output characteristics are stabilized across −40 °C to 150 °C, supporting reliable operation under high-duty-cycle sustain waveforms with 2 μs pulse width and 0.1 duty cycle.

The device integrates low-inductance internal layout (LC = 5.0 nH, LE = 13 nH) and exhibits 2250 pF Ciss at 25 V, enabling fast, controlled turn-on/off with 65 nC total gate charge and 112 ns td(off) at 25 °C - essential for precise timing in PDP energy recovery switching.

Key Specifications

ParameterValue and Actual Design Meaning
VCE max300 V - supports full PDP sustain voltage swing without breakdown risk
VCE(on) typ.1.90 V @ 70 A, 150 °C - reduces conduction loss and heatsink requirements in high-power sustain stages
IRP max250 A @ TC = 25 °C - handles high peak currents during PDP cell discharge pulses
EPULSE1075 μJ @ VCE = 240 V, TJ = 150 °C - enables efficient energy recovery in resonant sustain circuits
RθJC0.8 °C/W - allows direct mounting to heatsink with minimal thermal interface resistance
Qg65 nC - determines gate driver power and rise/fall time control in high-frequency sustain operation
tst100 ns minimum shoot-through blocking time - prevents cross-conduction in half-bridge sustain topologies

Pinout & Package

IRGP4086PBF uses the TO-247AC package - a through-hole, isolated-tab power package with 3 terminals. The case is electrically connected to the collector, requiring insulated mounting hardware.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control inputReceives 15 V logic-level drive; 65 nC Qg requires ≥1 A peak gate current for <35 ns rise time
C (Collector)High-side power outputConnected to PDP sustain bus; tab is collector - must be electrically isolated from heatsink
E (Emitter)Power return pathServes as reference for gate drive; low-inductance 13 nH internal emitter loop minimizes switching oscillation

Key Features

FeatureDesign Value
Advanced trench IGBT architectureEnables simultaneous low VCE(on) (1.90 V) and low EPULSE (1075 μJ) at 150 °C - critical for PDP thermal management
150 °C maximum junction temperatureSupports sustained operation in sealed PDP enclosures without derating below 70 A continuous current
High repetitive peak current rating250 A capability ensures margin against transient surge during plasma ignition and sustain transitions
Lead-free TO-247AC packageRoHS-compliant construction with tin-plated leads; thermal pad designed for >1.1 N·m mounting torque

Applications

Plasma Display Panel Sustain CircuitPDP Energy Recovery Stage

Use Scenario: Driving row/column electrodes during AC sustain phase in 42–65 inch plasma TVs and monitors.

IC Role / Device Role / Timing Role: High-speed switching element in half-bridge topology, conducting 200–240 V sustain pulses at 200–500 kHz.

Use Value: 1.90 V VCE(on) at 70 A reduces conduction loss by ~22% vs. comparable 125 °C-rated IGBTs, lowering module temperature rise.

Use Scenario: Recovering and recycling discharge energy between successive sustain pulses to improve system efficiency.

IC Role / Device Role / Timing Role: Bidirectional switch in resonant LC recovery circuit, handling reverse recovery current up to 250 A peak.

Use Value: 1075 μJ EPULSE at 150 °C enables >92% energy recovery efficiency while maintaining safe SOA margins.

PDP Address Driver Output StageIndustrial Plasma Ignition Module

Use Scenario: Final-stage switching for address electrode pulsing during write/erase phases in high-resolution PDPs.

IC Role / Device Role / Timing Role: Fast-turning IGBT with 112 ns td(off) at 25 °C, synchronized to microsecond-scale address timing windows.

Use Value: 100 ns minimum tst prevents shoot-through in stacked half-bridge configurations used for multi-level address voltage synthesis.

Use Scenario: High-reliability switching in industrial plasma torches and surface treatment systems operating continuously at elevated ambient temperatures.

IC Role / Device Role / Timing Role: Main power switch in DC-fed resonant inverter, cycling at 50–100 kHz with 0.1 duty factor pulses.

Use Value: RθJC = 0.8 °C/W and 150 °C TJmax allow stable operation at TC = 100 °C without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-based sustain and energy recovery applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXYS IXGN75N60B3600 V rating, higher VCE(on) (2.2 V @ 75 A), 125 °C TJmaxBetter overvoltage margin but lower efficiency and thermal headroom in 240 V PDP sustain railsSelect only if system requires >400 V bus tolerance; not recommended for space-constrained PDP modules
STMicroelectronics STGP7NC60HD600 V rating, 2.1 V VCE(on), TO-247 package with non-isolated tabLacks shoot-through blocking specification and PDP-optimized EPULSE data; higher thermal resistance (1.0 °C/W)Acceptable for lower-frequency industrial plasma, but not validated for PDP sustain waveform stress

Compared with IXGN75N60B3 and STGP7NC60HD, IRGP4086PBF offers the lowest conduction loss at 150 °C and the only published tst and EPULSE specs aligned to PDP timing requirements - making it the sole choice for production-grade plasma display sustain modules.

Availability

IRGP4086PBF is available at Aetrix Electronics and suitable for plasma display panel sustain circuits, PDP energy recovery inverters, and industrial plasma ignition systems requiring stable component supply and long-term lifecycle support.

Supply support for IRGP4086PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in high-voltage discrete devices and industrial power conversion.

The IRGP4086PBF belongs to Infineon's legacy "IR" high-performance IGBT portfolio, specifically engineered for plasma display panel sustain and energy recovery applications - emphasizing low-loss switching, thermal robustness, and waveform-specific reliability.

FAQ

What is the maximum gate-emitter voltage rating for IRGP4086PBF?

The absolute maximum VGE is ±30 V. Operation above ±20 V risks gate oxide damage; standard drive uses +15 V turn-on and −5 V to −10 V turn-off to ensure fast, noise-immune switching. Gate resistor selection must limit dV/dt-induced current spikes during high di/dt transitions.

Can IRGP4086PBF be used in hard-switched SMPS applications?

No - IRGP4086PBF is optimized for resonant, medium-frequency (200–500 kHz) PDP sustain waveforms with low duty cycle (0.1) and short pulse width (2 μs). Its SOA and EPULSE specs are not characterized for continuous hard-switching at >50 kHz, and its 300 V rating limits use in standard 400 V+ SMPS buses.

Is the TO-247AC package electrically isolated?

The TO-247AC package has an isolated collector tab: the metal case is internally connected to the collector terminal and must be mounted on an electrically insulated heatsink. Unlike TO-247AD, it does not feature a plastic isolation sleeve - mechanical insulation (e.g., mica washer + thermal grease) is mandatory for safe operation.

Does IRGP4086PBF require negative gate bias during off-state?

Negative gate bias (−5 V to −10 V) is strongly recommended to prevent spurious turn-on from Miller-induced dv/dt coupling during high di/dt switching. The device's VGE(th) shifts negatively with temperature (−11 mV/°C), so −5 V ensures >3 V margin across the full −40 °C to 150 °C range.

IRGP4086PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
Trench
Voltage - Collector Emitter Breakdown (Max):
300 V
Current - Collector (Ic) (Max):
70 A
Current - Collector Pulsed (Icm):
-
Vce(on) (Max) @ Vge, Ic:
2.96V @ 15V, 120A
Power - Max:
160 W
Switching Energy:
-
Input Type:
Standard
Gate Charge:
65 nC
Td (on/off) @ 25°C:
36ns/112ns
Test Condition:
196V, 25A, 10Ohm
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247AC

IRGP4086PBF FAQ

1.How can I place an order for IRGP4086PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGP4086PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGP4086PBF reliable?

The price and inventory of IRGP4086PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP4086PBF is usually 5 days.

3.What payment methods are accepted for IRGP4086PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP4086PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGP4086PBF?

IRGP4086PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGP4086PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGP4086PBF?

For technical support, including IRGP4086PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP4086PBF requirements.

6.How does Aetrix verify that IRGP4086PBF is sourced from the original manufacturer or authorized distributors?

All IRGP4086PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP4086PBF meets industry standards.

7.What is the process for return or replacement of IRGP4086PBF?

All IRGP4086PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGP4086PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGP4086PBF part is unused and in its original packaging.

Return procedure for IRGP4086PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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