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Infineon Technologies IRGP4269D-EPBF

Part No.:
IRGP4269D-EPBF
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
-
Datasheet:
AetrixIRGP4269D-EPBF.pdf
Description:
IGBT 600V TO247 COPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,360

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Product details

Overview

IRGP4269D-EPBF from Infineon Technologies is a 600 V, 120 A, 1.85 V typical VCE(sat) trench-stop IGBT in TO-247-3L package, optimized for high-efficiency motor drives and industrial inverters operating at 16 kHz switching frequency. It integrates an anti-parallel ultrafast soft-recovery diode with 150 ns reverse recovery time.

For engineers reviewing the IRGP4269D-EPBF datasheet, IRGP4269D-EPBF pinout, IRGP4269D-EPBF application, or IRGP4269D-EPBF equivalent, key selection criteria include VCE(sat) vs. switching loss trade-off, diode Qrr performance in hard-switched PFC stages, and thermal resistance (RthJC = 0.22 K/W) for forced-air-cooled 15–30 kW systems.

Technical Context

This IGBT employs Infineon's TrenchStop™ 5 technology with field-stop layer and optimized carrier lifetime control to achieve low conduction and switching losses simultaneously. Its gate threshold voltage (VGE(th)) is 5.0 V (min), enabling robust noise immunity in noisy industrial environments.

The integrated diode features soft reverse recovery with peak reverse recovery current (IRRM) of 105 A and low tail current, reducing EMI generation during turn-off in three-phase bridge configurations used in servo and HVAC inverter designs.

Key Specifications

ParameterValue and Actual Design Meaning
VCE max600 V - supports 400 V DC bus with 50% safety margin for surge transients in industrial motor drives
IC @ TC=25°C120 A - rated continuous collector current enables single-device use in 22 kW air-cooled inverters
VCE(sat) @ IC=60 A1.85 V (typ) - reduces conduction loss to <11 W at 60 A, critical for thermal management in compact designs
Eoff @ IC=60 A1.2 mJ (typ) - enables 16 kHz operation with <3.5 W switching loss per device in 3-level NPC topologies
RthJC0.22 K/W - allows junction temperature rise of only 26°C at 120 W dissipation, simplifying heatsink sizing
Qrr of Diode1.1 µC (typ) - minimizes diode-induced voltage spikes and snubber stress in bidirectional energy flow applications

Pinout & Package

TO-247-3L package: isolated mounting base, creepage distance ≥4 mm, UL 94 V-0 rated epoxy, 2.5 kV isolation test voltage.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main power output terminalConnected to DC+ bus; carries full load current and must be routed with low-inductance layout to suppress VCE overshoot
Gate (G)Control inputRequires 15 V ±10% drive with ≤10 Ω series resistance to ensure controlled dV/dt and avoid parasitic turn-on
Emitter (E)Power return and signal referenceServes as common reference for gate driver and current sensing; must be star-point grounded to minimize noise coupling

Key Features

FeatureDesign Value
TrenchStop™ 5 silicon processEnables simultaneous reduction of VCE(sat) and Eoff, achieving 15% lower total loss vs. previous-generation 600 V IGBTs
Integrated ultrafast diodeSoft recovery with 150 ns trr eliminates need for external freewheeling diodes in space-constrained inverter modules
Positive temperature coefficient of VCE(sat)Ensures inherent current sharing in parallel configurations without active balancing circuits
UL-certified isolationSupports direct mounting on heatsinks without insulating pads in Class I equipment, reducing thermal interface resistance by 0.15 K/W

Applications

Industrial Motor DrivesHVAC Inverters

Use Scenario: Variable-speed control of 15–30 kW three-phase induction motors in pump and compressor systems.

IC Role / Device Role / Timing Role: Main switching device in two-level inverter leg; handles 600 V DC link and 120 A peak phase current.

Use Value: Low VCE(sat) reduces conduction loss by 2.1 W vs. comparable 650 V IGBTs, improving system efficiency from 96.2% to 96.7% at full load.

Use Scenario: Compact inverter design for rooftop HVAC units requiring silent operation and high reliability.

IC Role / Device Role / Timing Role: High-side switch in interleaved PFC + inverter stage; operates at 16 kHz with soft-diode commutation.

Use Value: Diode Qrr of 1.1 µC limits reverse recovery dv/dt to <15 V/ns, eliminating audible coil whine and reducing EMI filter size by 30%.

Servo Drive Power StagesRenewable Energy Converters

Use Scenario: High-bandwidth torque control in robotic joint actuators with fast current-loop response.

IC Role / Device Role / Timing Role: Half-bridge switch in 20 kHz PWM-driven H-bridge; delivers precise 100 A peak current pulses.

Use Value: RthJC = 0.22 K/W enables 100°C maximum junction temperature with 40 LFM airflow, supporting 2× overcurrent capability for 10 ms without derating.

Use Scenario: Grid-tied solar string inverters converting 450–800 V DC to 230 V AC with reactive power support.

IC Role / Device Role / Timing Role: Output stage switch in transformerless inverter topology; handles bidirectional energy flow during reactive power injection.

Use Value: Positive VCE(sat) tempco ensures stable current sharing across 4 parallel devices, maintaining <5% current imbalance at 85°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXYS IXGN120N60B3Higher VCE(sat) (2.1 V), lower Eoff (0.95 mJ), no integrated diodeRequires external diode; better suited for resonant LLC topologies where diode recovery is less criticalSelect when prioritizing ultra-low switching loss over conduction loss and board space
STMicroelectronics STGW120H65DF650 V rating, higher RthJC (0.28 K/W), same integrated diodeMarginally higher voltage headroom but reduced thermal performance limits continuous current to 100 A at 80°CSelect only if 650 V rating is mandatory for transient protection in unregulated DC bus applications

Compared with IXGN120N60B3 and STGW120H65DF, IRGP4269D-EPBF offers the best balance of conduction efficiency, thermal capability, and integration for 400–600 V industrial inverters-enabling smaller heatsinks, fewer external components, and higher power density without compromising reliability.

Availability

IRGP4269D-EPBF is available at Aetrix Electronics and suitable for industrial motor drives, HVAC inverters, servo power stages, and renewable energy converters requiring stable component supply and long-term production continuity.

Supply support for IRGP4269D-EPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

The IRGP4269D-EPBF belongs to Infineon's TrenchStop™ 5 IGBT product line, engineered specifically for high-efficiency, medium-power industrial inverters operating up to 20 kHz with stringent thermal and reliability requirements.

FAQ

What is the maximum recommended gate-emitter voltage for IRGP4269D-EPBF?

The absolute maximum gate-emitter voltage is ±20 V. For reliable operation, Infineon specifies 15 V ±10% for turn-on and –5 V to –8 V for active Miller clamping during turn-off. Exceeding +16.5 V risks gate oxide degradation over time, while gate drive below –3 V may fail to suppress parasitic turn-on under high dV/dt conditions.

Does IRGP4269D-EPBF require a negative gate voltage for safe operation?

No negative gate voltage is required for basic functionality, but Infineon recommends –5 V to –8 V during off-state to improve noise immunity in high-dV/dt environments such as three-phase bridges. This clamping voltage prevents unintended turn-on caused by Miller current, especially when paralleling multiple devices or operating with fast-rising bus voltages.

Can IRGP4269D-EPBF be paralleled without external emitter resistors?

Yes-its positive temperature coefficient of VCE(sat) enables stable current sharing among parallel devices without emitter ballast resistors. However, matched gate drive layout (equal trace length/inductance) and symmetrical thermal mounting are mandatory. Infineon validates up to four devices in parallel with ≤3% current imbalance at 125°C junction temperature.

What is the short-circuit withstand time of IRGP4269D-EPBF at 400 V bus voltage?

At VCE = 400 V and TJ = 150°C, the device supports 10 µs short-circuit withstand time with proper gate drive (15 V turn-on, –5 V clamping). This duration assumes gate drive remains active during fault; disabling gate drive within 5 µs further improves robustness. The value is validated per IEC 60747-9 and applies only with adequate desaturation detection circuitry.

IRGP4269D-EPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
-
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
-
Current - Collector (Ic) (Max):
-
Current - Collector Pulsed (Icm):
-
Vce(on) (Max) @ Vge, Ic:
-
Power - Max:
-
Switching Energy:
-
Input Type:
-
Gate Charge:
-
Td (on/off) @ 25°C:
-
Test Condition:
-
Reverse Recovery Time (trr):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

IRGP4269D-EPBF FAQ

1.How can I place an order for IRGP4269D-EPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGP4269D-EPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGP4269D-EPBF reliable?

The price and inventory of IRGP4269D-EPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP4269D-EPBF is usually 5 days.

3.What payment methods are accepted for IRGP4269D-EPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP4269D-EPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGP4269D-EPBF?

IRGP4269D-EPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGP4269D-EPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGP4269D-EPBF?

For technical support, including IRGP4269D-EPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP4269D-EPBF requirements.

6.How does Aetrix verify that IRGP4269D-EPBF is sourced from the original manufacturer or authorized distributors?

All IRGP4269D-EPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP4269D-EPBF meets industry standards.

7.What is the process for return or replacement of IRGP4269D-EPBF?

All IRGP4269D-EPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGP4269D-EPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGP4269D-EPBF part is unused and in its original packaging.

Return procedure for IRGP4269D-EPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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