Infineon Technologies IRGP4630D-EPBF
- Part No.:
- IRGP4630D-EPBF
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
IRGP4630D-EPBF.pdf
- Description:
- IGBT 600V 47A 206W TO247AD
- Quantity:
- Payment:

- Shipping:

Inventory:4,097
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Product details
Overview
IRGP4630D-EPBF from Infineon Technologies is a 600 V, 30 A (TC = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery diode in TO-247AD package. It delivers 1.65 V typical VCE(on) at 18 A/15 VGE, supports 5 µs short-circuit withstand time, and operates up to 175°C junction temperature-designed for high-efficiency industrial motor drives and UPS inverters.
For engineers reviewing the IRGP4630D-EPBF datasheet, IRGP4630D-EPBF pinout, IRGP4630D-EPBF application, or IRGP4630D-EPBF equivalent, this device's square RBSOA, positive VCE(on) temperature coefficient, and low switching losses (Etotal = 855 µJ @ TJ = 175°C) are critical for parallel operation, hard-switching reliability, and thermal management in high-power converters.
Technical Context
This IGBT employs a trench-gate field-stop structure optimized for balanced conduction and switching performance. Its integrated diode features soft reverse recovery (trr = 100 ns, IRR = 23 A) and low Erec = 260 µJ at 175°C, minimizing voltage overshoot and EMI in bridge-leg configurations.
The device exhibits a robust short-circuit SOA (5 µs at VCC = 400 V) and full-square RBSOA up to 72 A at 175°C, enabled by precise threshold voltage distribution (VGE(th) = 4.0–6.5 V) and tight parameter matching across production lots.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 600 V - Withstands DC bus voltages up to 480 V in 3-phase inverters with 20% safety margin. |
| IC @ TC = 100°C | 30 A - Sustains continuous output current in forced-air-cooled motor drive heatsinks. |
| VCE(on) typ. | 1.65 V @ 18 A/15 VGE/25°C - Reduces conduction loss to ~30 W per device at rated current. |
| tSC | ≥5 µs - Enables robust hardware-based short-circuit protection without desaturation sensing delay. |
| Eoff @ TJ = 175°C | 570 µJ - Determines snubber sizing and gate driver peak current (IGPK ≥ 1.3 A for RG = 22 Ω). |
| RθJC (IGBT) | 0.78 °C/W - Defines minimum heatsink thermal resistance required to maintain TJ ≤ 175°C at 103 W dissipation. |
| Qg | 35 nC - Sets gate driver power requirement (PDRV ≈ 5.3 mW/MHz at 15 V swing). |
Pinout & Package
IRGP4630D-EPBF uses the TO-247AD package-a 3-pin, isolated-tab variant of TO-247 with collector-connected tab and separate emitter/gate leads. The package enables direct mounting to heatsinks while maintaining creepage/clearance for 600 V systems.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (Tab) | Main power output terminal | Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink. |
| Emitter | Power return path | Low-inductance connection point for shunt resistor placement and gate loop closure. |
| Gate | Control input | High-impedance MOS-controlled terminal; requires <100 nH gate loop inductance for stable switching. |
Key Features
| Feature | Design Value |
|---|---|
| Square RBSOA up to 72 A | Enables safe operation under inductive load transients without derating at high VCE. |
| Positive VCE(on) tempco | Ensures inherent current sharing in paralleled devices without external ballasting resistors. |
| 5 µs short-circuit SOA | Allows fixed-time desaturation detection circuitry instead of complex analog sensing. |
| Ultrafast soft-recovery diode | Reduces diode reverse recovery stress on complementary IGBT, lowering Eoff by ~15% in bridge legs. |
| RoHS-compliant Pb-free finish | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1), eliminating bake requirements pre-reflow. |
Applications
| Industrial Motor Drive | Inverter Systems |
|---|---|
|
Use Scenario: 3-phase 7.5 kW variable-frequency drive for HVAC compressors operating at 4 kHz PWM frequency. IC Role / Device Role / Timing Role: High-side IGBT in 6-pack module configuration, switching at 4 kHz with 15 V gate drive. Use Value: Low VCE(on) reduces conduction loss by 12% vs. legacy 650 V IGBTs, improving system efficiency from 94.2% to 95.1% at full load. |
Use Scenario: Solar string inverter DC-AC stage with unipolar modulation and active clamping. IC Role / Device Role / Timing Role: Main switching device in H-bridge leg, handling 400 V DC bus and 50 A peak AC current. Use Value: 5 µs SC-SOA allows deterministic fault response within 3 switching cycles, meeting UL 1741 anti-islanding timing constraints. |
| Uninterruptible Power Supply | Induction Welding Equipment |
|
Use Scenario: Online double-conversion UPS delivering 10 kVA with zero-transfer-time switchover. IC Role / Device Role / Timing Role: Inverter-stage IGBT managing bidirectional energy flow between battery bank and AC output. Use Value: 175°C max junction temperature enables compact heatsink design, reducing enclosure volume by 28% vs. 150°C-rated alternatives. |
Use Scenario: Medium-frequency (20 kHz) inverter for resistance spot welding with 10 ms on-time pulses. IC Role / Device Role / Timing Role: Primary switching element controlling primary-side current into step-down transformer. Use Value: Soft-recovery diode limits di/dt-induced voltage spikes to <650 V during turn-off, eliminating need for RC snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN60N60B4 | 600 V/60 A, higher IC rating but 2.1 V VCE(on); RθJC = 0.45 °C/W. | Better suited for higher-current, lower-frequency (<5 kHz) welder designs requiring >45 A RMS. | Select when thermal budget permits higher VCE(on) for increased current headroom. |
| STMicroelectronics STGW40H65DFB | 650 V/40 A, integrated diode with 120 ns trr; RθJC = 0.55 °C/W. | Preferred for 650 V DC-link systems (e.g., EV chargers) where higher blocking voltage is mandatory. | Choose only if system VDC exceeds 500 V or diode trr tolerance >100 ns is acceptable. |
Compared with IXGN60N60B4 and STGW40H65DFB, IRGP4630D-EPBF offers the lowest conduction loss at 18 A and optimal thermal resistance for 4–10 kHz motor drive applications, making it the most efficient choice for space-constrained 600 V industrial inverters.
Availability
IRGP4630D-EPBF is available at Aetrix Electronics and suitable for industrial motor drives, UPS systems, and induction welding equipment requiring stable component supply and long-term manufacturing continuity.
Supply support for IRGP4630D-EPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global fabrication and packaging facilities.
This device belongs to Infineon's "StrongIRFET" IGBT portfolio, engineered specifically for ruggedized industrial switching applications demanding high reliability, thermal robustness, and integrated diode performance.
FAQ
What is the maximum gate-emitter voltage rating for IRGP4630D-EPBF?
The absolute maximum continuous VGE is ±20 V, with transient capability up to ±30 V for ≤100 ns. Exceeding ±20 V continuously risks oxide degradation and threshold voltage shift; gate drivers must include clamping (e.g., 18 V Zener) to ensure long-term reliability under switching noise.
Can IRGP4630D-EPBF be paralleled without external emitter resistors?
Yes-its positive VCE(on) temperature coefficient and tight VGE(th) distribution (4.0–6.5 V) enable stable current sharing. However, matched gate drive impedance (≤5% variation) and symmetrical PCB layout are mandatory to prevent dynamic imbalance during turn-on/turn-off transitions.
What is the recommended gate resistor value for 4 kHz motor drive operation?
A 22 Ω gate resistor is validated in the datasheet for 400 V bus, 18 A load, and 175°C junction temperature. This value balances switching loss (Etotal = 855 µJ) and EMI; reducing below 15 Ω increases dV/dt stress on the diode and raises Eoff by >22%.
Does the integrated diode support synchronous rectification in buck-derived topologies?
No-the diode is optimized for freewheeling in inverter half-bridges, not synchronous rectification. Its 2.3 V forward drop at 18 A and 100 ns trr result in higher conduction and recovery losses than discrete SiC Schottky diodes; use external FETs for true synchronous operation.
IRGP4630D-EPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 47 A
- Current - Collector Pulsed (Icm):
- 54 A
- Vce(on) (Max) @ Vge, Ic:
- 1.95V @ 15V, 18A
- Power - Max:
- 206 W
- Switching Energy:
- 95µJ (on), 350µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 35 nC
- Td (on/off) @ 25°C:
- 40ns/105ns
- Test Condition:
- 400V, 18A, 22Ohm, 15V
- Reverse Recovery Time (trr):
- 100 ns
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AD
IRGP4630D-EPBF FAQ
1.How can I place an order for IRGP4630D-EPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRGP4630D-EPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRGP4630D-EPBF reliable?
The price and inventory of IRGP4630D-EPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP4630D-EPBF is usually 5 days.
3.What payment methods are accepted for IRGP4630D-EPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP4630D-EPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRGP4630D-EPBF?
IRGP4630D-EPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRGP4630D-EPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRGP4630D-EPBF?
For technical support, including IRGP4630D-EPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP4630D-EPBF requirements.
6.How does Aetrix verify that IRGP4630D-EPBF is sourced from the original manufacturer or authorized distributors?
All IRGP4630D-EPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP4630D-EPBF meets industry standards.
7.What is the process for return or replacement of IRGP4630D-EPBF?
All IRGP4630D-EPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGP4630D-EPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRGP4630D-EPBF part is unused and in its original packaging.
Return procedure for IRGP4630D-EPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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