Infineon Technologies IRGP4630DPBF

Overview

IRGP4630DPBF from Infineon Technologies is a 600 V, 30 A (T_C = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery diode in TO-247AC package, optimized for industrial motor drives, UPS inverters, and welding power stages where rugged short-circuit capability (t_SC ≥ 5 µs), low V_CE(on) (1.65 V @ 18 A, 25°C), and 175°C maximum junction temperature are critical.

For engineers reviewing the IRGP4630DPBF datasheet, IRGP4630DPBF pinout, IRGP4630DPBF application, or IRGP4630DPBF equivalent, this device requires attention to gate drive voltage range (±20 V), R_θJC (0.78 °C/W for IGBT, 2.1 °C/W for diode), SOA compliance at 175°C, and clamped inductive load current rating (72 A).

Technical Context

This IGBT features a positive V_CE(on) temperature coefficient and tight parameter distribution-enabling stable parallel operation without current-sharing resistors. Its square RBSOA up to 175°C supports hard-switching in high-power converters without derating.

The integrated diode delivers t_rr = 100 ns and E_rec = 260 µJ at 175°C, with low reverse recovery peak current (I_rr = 23 A) and controlled di/dt sensitivity-reducing voltage overshoot and EMI in bridge-leg configurations.

Key Specifications

Pinout & Package

IRGP4630DPBF uses the TO-247AC package: isolated metal tab (collector), 3-pin through-hole layout with 2.54 mm pitch, designed for mechanical stability and low-inductance heatsink mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IXGN60N60C3 and STGW40H65DFB, IRGP4630DPBF offers optimal balance of integrated diode functionality, 5 µs short-circuit ruggedness, and proven thermal performance in 30 A industrial inverters-making it preferred for cost-sensitive, space-constrained UPS and motor drive designs where diode co-location reduces layout parasitics.

Availability

IRGP4630DPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and welding equipment requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRGP4630DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This device belongs to Infineon's "StrongIRFET" and "IGBT3" generation product line, engineered specifically for high-efficiency, high-reliability industrial power conversion with emphasis on ruggedness, thermal stability, and ease of paralleling.

FAQ

What is the maximum gate-emitter voltage rating for IRGP4630DPBF?

The absolute maximum continuous gate-to-emitter voltage is ±20 V, with transient rating up to ±30 V for ≤100 ns. Exceeding ±20 V continuously risks gate oxide degradation; typical gate drive uses +15 V for saturation and –5 V to –10 V for fast, noise-immune turn-off.

Does IRGP4630DPBF require an external freewheeling diode?

No. It integrates an ultrafast soft-recovery diode rated for 30 A continuous forward current at T_C = 25°C and 18 A at T_C = 100°C. The diode shares the same thermal path and exhibits matched temperature behavior with the IGBT die, eliminating mismatch-induced thermal stress.

How does the 5 µs short-circuit SOA translate to practical protection design?

The 5 µs rating means the device can safely withstand a direct collector-to-emitter short at V_CC = 400 V and T_J = 150°C for up to 5 µs before thermal runaway. This allows use of standard gate drivers with built-in DESAT detection and blanking times set between 2–4 µs, avoiding complex current-sensing circuits.

What is the recommended gate resistor value for switching at 16 kHz in a 3-phase inverter?

A 22 Ω gate resistor is validated in the datasheet for 18 A, 400 V, 16 kHz operation-yielding ~105 ns t_d(off), ~40 ns t_d(on), and total switching loss of 855 µJ at 175°C. Lower values increase dv/dt stress; higher values raise E_on/E_off and reduce efficiency.