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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGP4650DPBF

Name: IRGP4650DPBF
Brand: Infineon Technologies
SKU: IRGP4650DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGP4650DPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IRGP4650DPBF.pdf

Description:: IGBT 600V 76A 268W TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRGP4650DPBF from Infineon Technologies is a 600 V, 50 A (T_C = 100°C) n-channel IGBT with integrated fast recovery anti-parallel diode in TO-247AC package. It delivers 1.60 V typical V_CE(on) at 35 A/15 V/25°C, supports 5 μs short-circuit SOA, and operates up to 175°C junction temperature. Used in industrial motor drives, UPS inverters, and welding power stages where ruggedness and high efficiency are critical.

For engineers reviewing the IRGP4650DPBF datasheet, IRGP4650DPBF pinout, IRGP4650DPBF application, or IRGP4650DPBF equivalent, key selection criteria include its square RBSOA, positive V_CE(on) temperature coefficient for parallel operation, low switching losses (E_on = 390 μJ, E_off = 632 μJ @ 25°C), and lead-free RoHS-compliant construction.

Technical Context

This IGBT employs a trench-gate field-stop structure optimized for hard-switching industrial applications. Its full-square RBSOA enables reliable operation under voltage overshoot during turn-off, while the integrated diode features 120 ns reverse recovery time and 304 μJ reverse recovery energy at 175°C.

The device exhibits a +1.3 mV/°C breakdown voltage temperature coefficient and -18 mV/°C gate threshold drift, supporting stable biasing across wide thermal ranges. Gate charge parameters (Q_g = 69 nC typ., Q_gc = 29 nC) are calibrated for 10 Ω gate resistance driving at 400 V DC bus.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands 80% of rated voltage (480 V) in RBSOA testing without failure.
I_C @ T_C = 100°C	50 A - Sustains continuous conduction at industrial ambient temperatures without derating.
V_CE(on) typ.	1.60 V @ 35 A/15 V/25°C - Enables <1.2 W conduction loss per device at rated current.
t_SC	≥5 μs - Supports robust hardware-based short-circuit protection with fixed gate drive timing.
R_θJC (IGBT)	0.56 °C/W - Allows 268 W max power dissipation at 25°C case temperature for thermal design.
E_off @ 175°C	929 μJ - Defines gate driver energy requirement and snubber sizing at maximum junction temperature.
Q_gc	29 nC typ. - Determines Miller-induced voltage spikes and required gate driver peak current.

Pinout & Package

IRGP4650DPBF uses the TO-247AC package: insulated tab, single-row 3-pin configuration, 0.063 in. (1.6 mm) minimum soldering distance from case, 10 lbf·in mounting torque rating.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls IGBT conduction via ±20 V continuous voltage; requires 69 nC total charge for full turn-on.
C	Collector	Main high-side power terminal; connects to DC bus; handles 140 A pulse current (I_CM).
E	Emitter	Power return path and reference for gate drive; shared with anti-parallel diode cathode.

Key Features

Feature	Design Value
Low V_CE(on) and switching losses	Reduces total system power loss in 4–20 kHz motor drive inverters, improving thermal margin by ≥15% vs. legacy 600 V IGBTs.
Square RBSOA	Enables safe operation at V_CC = 480 V with 100% rated current during transient overvoltage events without external clamping.
Positive V_CE(on) temp. coefficient	Ensures natural current sharing when paralleling ≥2 devices without active current balancing circuitry.
5 μs short-circuit SOA	Permits use of fixed 5 μs blanking time in gate driver ICs (e.g., 1ED020I12FA) for deterministic fault response.
Integrated fast diode	Provides 120 ns trr and 25 A I_rr at 175°C, reducing diode recovery losses in regenerative braking and bidirectional converters.

Applications

Industrial Motor Drive

Inverter Systems

Use Scenario: Three-phase 15–30 kW AC induction motor control in HVAC compressors and pump drives.

IC Role / Device Role / Timing Role: Main switching element in 6-pack inverter bridge; switches at 8–16 kHz with 500 ns dead-time.

Use Value: 1.60 V V_CE(on) reduces conduction loss by 0.8 W per device vs. competing 600 V IGBTs, lowering heatsink size by 22%.

Use Scenario: Grid-tied solar PV inverters converting DC to 50/60 Hz AC with reactive power support.

IC Role / Device Role / Timing Role: High-side switch in NPC or T-type three-level topology; operates with 1200 V blocking requirement per leg.

Use Value: Square RBSOA allows 480 V operation at full current during line surges, eliminating need for TVS clamps on DC link.

Uninterruptible Power Supply

Industrial Welding Equipment

Use Scenario: Online double-conversion UPS delivering clean 230 V/50 Hz output during mains failure.

IC Role / Device Role / Timing Role: Inverter stage switch handling 100% load step transients; duty cycle includes 100% overload for 10 sec.

Use Value: 175°C max junction temperature enables 100% rated output at 40°C ambient without fan derating, improving reliability in enclosed cabinets.

Use Scenario: IGBT-based inverter welder generating 200–500 A DC output with adjustable arc characteristics.

IC Role / Device Role / Timing Role: Primary power switch modulating 400 V DC bus at 15–25 kHz to regulate output current waveform.

Use Value: 5 μs short-circuit SOA supports arc-short detection and immediate shutdown, preventing transformer saturation and coil damage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N60B3	Higher V_CE(on) (1.85 V @ 35 A), lower Q_g (52 nC), same 600 V/50 A rating.	Better suited for higher-frequency (>30 kHz) resonant topologies due to lower gate charge.	Select when prioritizing switching speed over conduction loss in SMPS-derived welders.
STMicroelectronics STGW40H65DFB	Lower I_C rating (40 A @ 100°C), integrated diode with slower trr (150 ns), same TO-247AD package.	Limited to ≤12 kW motor drives; requires larger heatsink for equivalent power density.	Choose only if supply chain constraints prevent sourcing IRGP4650DPBF and thermal margin permits 20% derating.

Compared with IXGN50N60B3 and STGW40H65DFB, IRGP4650DPBF offers the lowest conduction loss and widest RBSOA among 600 V/50 A IGBTs, making it optimal for hard-switched industrial inverters requiring both efficiency and ruggedness.

Availability

IRGP4650DPBF is available at Aetrix Electronics and suitable for industrial motor drive, UPS inverter, and welding equipment requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for IRGP4650DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive MCUs, and security ICs, with global manufacturing and R&D centers.

This device belongs to Infineon's PrimePACK™-compatible 600 V TRENCHSTOP™ IGBT3 family, engineered for high-reliability industrial switching applications demanding low loss, high ruggedness, and extended temperature operation.

FAQ

What is the maximum gate-emitter voltage rating for IRGP4650DPBF?

The absolute maximum continuous gate-to-emitter voltage is ±20 V, with transient rating up to ±30 V for ≤100 ns pulses. Exceeding ±20 V continuously risks oxide degradation and threshold shift; gate drivers must clamp to this limit using Zener diodes or active regulation.

Can IRGP4650DPBF be paralleled without external current-sharing components?

Yes-its positive V_CE(on) temperature coefficient ensures inherent current balancing across devices operating at different junction temperatures. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and identical heatsinking to maintain thermal uniformity.

What is the recommended gate resistor value for 400 V bus operation?

A 10 Ω gate resistor is validated in the datasheet for 400 V bus, delivering td_on = 46 ns and E_off = 632 μJ at 25°C. For 175°C operation, increase to 12–15 Ω to reduce E_off rise and maintain safe SOA margins during high-temperature switching.

Does IRGP4650DPBF include an integrated freewheeling diode?

Yes-it integrates a fast recovery anti-parallel diode with 120 ns reverse recovery time and 304 μJ reverse recovery energy at 175°C. The diode shares the emitter terminal and is co-packaged in the same TO-247AC housing, enabling compact half-bridge designs without discrete diode placement.

IRGP4650DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 76 A

Current - Collector Pulsed (Icm):: 105 A

Vce(on) (Max) @ Vge, Ic:: 1.9V @ 15V, 35A

Power - Max:: 268 W

Switching Energy:: 390µJ (on), 632µJ (off)

Input Type:: Standard

Gate Charge:: 104 nC

Td (on/off) @ 25°C:: 46ns/105ns

Test Condition:: 400V, 35A, 10Ohm, 15V

Reverse Recovery Time (trr):: 120 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRGP4650DPBF FAQ

1.How can I place an order for IRGP4650DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGP4650DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGP4650DPBF reliable?

The price and inventory of IRGP4650DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP4650DPBF is usually 5 days.

3.What payment methods are accepted for IRGP4650DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP4650DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGP4650DPBF?

IRGP4650DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGP4650DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGP4650DPBF?

For technical support, including IRGP4650DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP4650DPBF requirements.

6.How does Aetrix verify that IRGP4650DPBF is sourced from the original manufacturer or authorized distributors?

All IRGP4650DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP4650DPBF meets industry standards.

7.What is the process for return or replacement of IRGP4650DPBF?

All IRGP4650DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGP4650DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGP4650DPBF part is unused and in its original packaging.

Return procedure for IRGP4650DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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