Infineon Technologies IRGP4760D-EPBF

Overview

IRGP4760D-EPBF from Infineon Technologies (formerly International Rectifier) is a 650 V, 90 A (T_C = 25°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery anti-parallel diode in TO-247AD package. It delivers 1.7 V typical V_CE(on) at 48 A/15 V_GE/25°C, 5.5 µs short-circuit SOA, and 175°C max junction temperature-designed for high-efficiency industrial motor drives and solar inverters.

For engineers reviewing the IRGP4760D-EPBF datasheet, IRGP4760D-EPBF pinout, IRGP4760D-EPBF application, or IRGP4760D-EPBF equivalent, key selection criteria include its R_θJC(IGBT) = 0.46 °C/W, clamped inductive load current of 192 A, and RBSOA compliance up to 650 V at 175°C-critical for robust inverter leg design under transient overloads.

Technical Context

This IGBT employs a trench-gate field-stop structure enabling low conduction loss and controlled tail current decay. Its integrated diode features soft reverse recovery (t_rr = 170 ns, I_RR = 25 A at T_J = 175°C) and low E_rec = 370 µJ, minimizing voltage overshoot during commutation in hard-switched topologies.

The device supports gate drive voltages from ±20 V, exhibits positive V_CE(on) temperature coefficient for stable parallel operation, and maintains square RBSOA up to 650 V with V_GE = +20 V to 0 V-enabling reliable operation in 400–520 V DC-link applications like UPS and welding inverters.

Key Specifications

Pinout & Package

IRGP4760D-EPBF uses the TO-247AD package-a 3-lead through-hole outline with isolated tab, optimized for high-current, high-voltage discrete power switching. The package provides 0.24 °C/W case-to-sink thermal resistance on greased flat surfaces and supports 1.1 N·m mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT with integrated diode applications.

Compared with IXGN60N60C3 and STGW40H65DFB, IRGP4760D-EPBF uniquely combines 90 A current capability, 650 V rating, integrated soft diode, and 5.5 µs SC-SOA-making it optimal for high-power, high-reliability inverter legs where thermal margin and fault robustness are critical.

Availability

IRGP4760D-EPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar inverters requiring stable component supply across multi-year production cycles.

Supply support for IRGP4760D-EPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in high-voltage discrete devices.

This part belongs to Infineon's legacy IGBT portfolio originally developed by International Rectifier, targeting high-efficiency, high-reliability industrial power conversion systems operating at 400–650 V DC-link voltages.

FAQ

What is the maximum gate-emitter voltage rating for IRGP4760D-EPBF?

The absolute maximum continuous gate-to-emitter voltage is ±20 V. Exceeding this risks permanent gate oxide damage. Recommended operating range is +15 V for turn-on and –5 V to 0 V for turn-off to ensure robust noise immunity and minimize Miller-induced shoot-through in bridge configurations.

Does IRGP4760D-EPBF require an external freewheeling diode?

No. It integrates an ultrafast soft-recovery anti-parallel diode rated for 74 A continuous forward current at 25°C and 192 A pulsed. This eliminates the need for discrete diodes in standard inverter leg layouts, reducing board area and parasitic inductance.

How does the 5.5 µs short-circuit SOA translate to practical protection design?

At V_CC = 400 V and T_J = 150°C, the device safely withstands bolted faults for 5.5 µs before thermal runaway. This mandates fast-acting desaturation detection with ≤3 µs response time and gate shutdown within 2 µs to remain within SOA limits.

What thermal interface material is recommended for TO-247AD mounting?

A thermally conductive grease with 0.24 °C/W case-to-sink resistance (as specified) requires uniform 0.05–0.1 mm bond line thickness. Recommended materials include Dow Corning TC-5122 or Parker Chomerics CHO-THERM 5500, applied via stencil or automated dispensing to avoid air gaps and pump-out under thermal cycling.