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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGP4790D-EPBF

Name: IRGP4790D-EPBF
Brand: Infineon Technologies
SKU: IRGP4790D-EPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGP4790D-EPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IRGP4790D-EPBF.pdf

Description:: IGBT 650V 140A TO247AD

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRGP4790D-EPBF from Infineon Technologies (formerly International Rectifier) is a 650 V, 90 A (T_C = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery anti-parallel diode in TO-247AD package. It delivers 1.7 V typical V_CE(on) at 75 A/15 V_GE, 5.5 µs short-circuit SOA, and 175°C max junction temperature - enabling high-efficiency, high-reliability switching in industrial motor drives and solar inverters.

For engineers reviewing the IRGP4790D-EPBF datasheet, IRGP4790D-EPBF pinout, IRGP4790D-EPBF application, or IRGP4790D-EPBF equivalent, key selection criteria include its RBSOA-rated 300 A clamped inductive current capability, 0.33 °C/W IGBT junction-to-case thermal resistance, and low 140–210 nC total gate charge for optimized gate drive design and thermal management.

Technical Context

This device implements a trench-gate field-stop IGBT structure with co-packaged ultrafast soft-recovery diode, supporting square reverse bias safe operating area (RBSOA) up to 650 V and 300 A at T_J = 175°C. Its positive V_CE(on) temperature coefficient enables stable parallel operation without current-sharing resistors.

The IGBT features 5.5 µs short-circuit withstand time at V_CC = 400 V and T_J = 150°C, with turn-on/turn-off energy losses of 3.9 mJ and 2.8 mJ respectively at 175°C - validated under standardized inductive switching conditions (L = 200 µH, R_G = 10 Ω, V_GE = 15 V).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	650 V - Maximum blocking voltage; supports 400 V DC bus designs with 1.6× safety margin for transient overvoltage.
I_C @ T_C = 100°C	90 A - Continuous collector current rating at practical heatsink temperature; defines usable RMS load capacity in thermal-limited systems.
V_CE(on) typ.	1.7 V @ 75 A, 15 V_GE, 25°C - Low conduction loss enables >98% efficiency in 10–20 kHz PWM motor drive stages.
t_SC	5.5 µs - Short-circuit withstand time at 150°C junction; allows robust fault detection and protection circuit response.
R_θJC (IGBT)	0.33 °C/W - Junction-to-case thermal resistance; determines minimum heatsink interface requirement for 230 W power dissipation at T_C = 100°C.
E_off @ 175°C	2.8 mJ - Turn-off energy loss at max junction temperature; critical for calculating snubber sizing and thermal budget in high-temp operation.
Q_g	140–210 nC - Total gate charge range; sets gate driver peak current (≥14 A for 10 ns rise time) and drive power requirements.

Pinout & Package

IRGP4790D-EPBF uses the TO-247AD package - a 3-pin, through-hole, isolated-tab variant of TO-247 with extended creepage distance and enhanced thermal performance versus standard TO-247AC. The tab is electrically connected to the collector (C), requiring insulated mounting hardware.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Connected to heatsink tab; carries full load current and must be isolated from chassis ground unless system topology requires common-collector configuration.
Gate (G)	Control input for IGBT channel	High-impedance MOS-controlled terminal; requires <±20 V absolute gate-emitter voltage limit and low-inductance gate loop to suppress oscillation during fast switching.
Emitter (E)	Power return and reference node	Serves as common reference for gate drive and current sensing; low-inductance emitter layout is essential to minimize Miller-induced false turn-on.

Key Features

Feature	Design Value
Ultrafast soft-recovery anti-parallel diode	170 ns t_rr, 27 A I_RR, and 770 µJ E_rec at 175°C - minimizes voltage overshoot and EMI during freewheeling in bridge-leg configurations.
Positive V_CE(on) temperature coefficient	Increases ~0.6 mV/°C above 25°C - enables natural current balancing in paralleled devices without external ballasting resistors.
175°C maximum junction temperature	Extends usable lifetime in high-ambient environments (e.g., enclosed UPS cabinets or solar inverters) and reduces derating penalties.
Full-square RBSOA	Rated for 300 A at 650 V with V_GE = +20 V → 0 V transition - supports hard-switched topologies without active voltage clamping.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1); eliminates post-reflow baking and supports standard reflow profiles.

Applications

Industrial Motor Drive

Uninterruptible Power Supply (UPS)

Use Scenario: Three-phase inverter stage in 15–30 kW HVAC compressors and pump drives operating at 8–16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side IGBT switch with integrated freewheeling diode in six-pack half-bridge module replacement configuration.

Use Value: 1.7 V V_CE(on) and 0.33 °C/W R_θJC reduce conduction loss by 18% vs. legacy 600 V IGBTs, lowering heatsink mass by 35% in forced-air-cooled enclosures.

Use Scenario: Bidirectional DC-AC inverter in online double-conversion UPS systems delivering clean 50/60 Hz sine wave output under battery backup.

IC Role / Device Role / Timing Role: Main switching element in H-bridge output stage handling 20 kVA load with zero-crossing synchronized modulation.

Use Value: 5.5 µs short-circuit SOA and 300 A clamped inductive current enable reliable fault clearing during output short events without desaturation protection circuitry.

Solar Inverter

Welding Equipment

Use Scenario: DC-link switching stage in string inverters converting 600–1000 V PV array output to grid-synchronized AC at 18–22 kHz.

IC Role / Device Role / Timing Role: IGBT in NPC (neutral-point-clamped) or T-type three-level topology managing high-voltage DC bus commutation.

Use Value: 650 V V_CES rating with 1.6× margin supports 1000 V DC systems while maintaining low switching loss (E_total = 6.7 mJ @ 175°C) for >98.5% peak efficiency.

Use Scenario: Primary inverter in IGBT-based inverter welding machines delivering 200–500 A DC output with pulsed arc control.

IC Role / Device Role / Timing Role: High-current switching device in single-ended or full-bridge primary stage driving high-frequency transformer.

Use Value: 90 A continuous current at 100°C case temperature and 300 A pulse rating support 400 A peak weld currents with 60% duty cycle, eliminating forced liquid cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN100N60B3	600 V V_CES, 100 A I_C, 2.2 V V_CE(on), TO-247AD package	Limited to ≤600 V DC bus; higher conduction loss increases thermal stress in 800 V solar systems.	Select when cost-sensitive 600 V designs require higher current headroom but can accept 0.5 V higher saturation voltage.
STMicroelectronics STGW40H65DF	650 V V_CES, 40 A I_C, 1.8 V V_CE(on), TO-247 package with integrated diode	Lower current rating requires paralleling for ≥75 A loads; lacks documented RBSOA data above 200 A.	Choose for space-constrained 3–5 kW inverters where footprint and single-device simplicity outweigh current scalability needs.

Compared with IXGN100N60B3 and STGW40H65DF, IRGP4790D-EPBF uniquely balances 650 V blocking, 90 A thermal current, and 5.5 µs short-circuit ruggedness - making it optimal for single-device implementation in 15–30 kW industrial and renewable energy converters where reliability under overload is non-negotiable.

Availability

IRGP4790D-EPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar inverters requiring stable component supply across multi-year production cycles.

Supply support for IRGP4790D-EPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This device belongs to Infineon's PrimePACK™-compatible high-power IGBT portfolio, engineered for rugged, high-efficiency switching in mission-critical industrial power conversion systems operating at elevated temperatures and voltages.

FAQ

What is the maximum gate-emitter voltage rating for IRGP4790D-EPBF?

The absolute maximum continuous gate-to-emitter voltage is ±20 V. Exceeding this limit risks permanent gate oxide damage. Gate drive circuits must clamp transients using Zener diodes or active clamps, especially during fast turn-off with high di/dt in inductive loads.

Does IRGP4790D-EPBF require a negative gate voltage for reliable turn-off?

No - it operates reliably with 0 V gate drive for turn-off. However, applying –5 V to –10 V improves noise immunity and prevents spurious turn-on during high dv/dt commutation events, particularly in paralleled configurations or high-density PCB layouts.

How does the integrated diode differ from standard FRD counterparts?

Its ultrafast soft-recovery diode exhibits 170 ns reverse recovery time, 27 A peak reverse recovery current, and soft recovery waveform (low di/dt during turn-off), reducing voltage spikes and EMI compared to standard fast recovery diodes - critical for high-frequency bridge-leg operation.

Can IRGP4790D-EPBF be paralleled without external current-sharing components?

Yes - its positive V_CE(on) temperature coefficient ensures inherent current sharing across paralleled units. Successful parallel operation requires matched gate drive impedance, symmetrical layout, and identical heatsink mounting pressure to maintain thermal uniformity across devices.

IRGP4790D-EPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 140 A

Current - Collector Pulsed (Icm):: 225 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 75A

Power - Max:: 455 W

Switching Energy:: 2.5mJ (on), 2.2mJ (off)

Input Type:: Standard

Gate Charge:: 210 nC

Td (on/off) @ 25°C:: 50ns/200ns

Test Condition:: 400V, 75A, 10Ohm, 15V

Reverse Recovery Time (trr):: 170 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AD

IRGP4790D-EPBF FAQ

1.How can I place an order for IRGP4790D-EPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGP4790D-EPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGP4790D-EPBF reliable?

The price and inventory of IRGP4790D-EPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP4790D-EPBF is usually 5 days.

3.What payment methods are accepted for IRGP4790D-EPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP4790D-EPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGP4790D-EPBF?

IRGP4790D-EPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGP4790D-EPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGP4790D-EPBF?

For technical support, including IRGP4790D-EPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP4790D-EPBF requirements.

6.How does Aetrix verify that IRGP4790D-EPBF is sourced from the original manufacturer or authorized distributors?

All IRGP4790D-EPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP4790D-EPBF meets industry standards.

7.What is the process for return or replacement of IRGP4790D-EPBF?

All IRGP4790D-EPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGP4790D-EPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGP4790D-EPBF part is unused and in its original packaging.

Return procedure for IRGP4790D-EPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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