Infineon Technologies IRGP4790DPBF

Overview

IRGP4790DPBF from Infineon Technologies (formerly International Rectifier) is a 650 V, 140 A (T_C = 25°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery anti-parallel diode in TO-247AC package. It delivers 1.7 V typical V_CE(on) at 75 A/15 V_GE, 5.5 µs short-circuit SOA, and 175°C max junction temperature-designed for high-efficiency switching in industrial motor drives and solar inverters.

For engineers reviewing the IRGP4790DPBF datasheet, IRGP4790DPBF pinout, IRGP4790DPBF application, or IRGP4790DPBF equivalent, key selection criteria include its R_θJC(IGBT) = 0.33°C/W, 225 A pulse current rating, 140 nC total gate charge, and RBSOA compliance up to 650 V at T_J = 175°C-critical for robust inverter leg design under transient overload.

Technical Context

This IGBT employs a field-stop trench-gate structure enabling low conduction loss and controlled tail current decay. Its integrated diode exhibits 170 ns reverse recovery time and 770 µJ E_rec at T_J = 175°C, supporting soft-switching topologies without external snubbers.

The device features positive V_CE(on) temperature coefficient for stable parallel operation and a 5.5 µs short-circuit withstand capability at V_CC = 400 V and T_J = 150°C-enabling reliable overcurrent protection in UPS and welding systems without complex desaturation sensing.

Key Specifications

Pinout & Package

IRGP4790DPBF uses the industry-standard TO-247AC package with isolated tab (collector-connected), featuring three terminals: Gate (G), Collector (C), and Emitter (E). The metal tab is electrically connected to the collector, requiring insulating mounting hardware when used on grounded heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power IGBT applications.

Compared with IXGN120N60B3 and STGW40H65DFB, IRGP4790DPBF provides superior current density (140 A in TO-247AC), lowest V_CE(on) among 650 V peers, and integrated diode optimized for soft recovery-making it optimal for 30–50 kW industrial inverters demanding high efficiency and ruggedness.

Availability

IRGP4790DPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar inverters requiring stable component supply across multi-year production cycles.

Supply support for IRGP4790DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in high-voltage power devices and industrial system solutions.

This part belongs to Infineon's legacy High Voltage IGBT portfolio (originally developed by International Rectifier), engineered specifically for high-efficiency, high-reliability industrial power conversion systems operating at 650 V bus voltages.

FAQ

What is the maximum gate-emitter voltage rating for IRGP4790DPBF?

The absolute maximum continuous gate-to-emitter voltage is ±20 V. Exceeding this rating risks permanent gate oxide damage. Recommended operating range is –10 V to +15 V for reliable turn-on/turn-off; negative gate bias improves noise immunity and prevents spurious turn-on during high dv/dt conditions.

Does IRGP4790DPBF require a heatsink, and what thermal resistance is needed?

Yes-its 455 W maximum power dissipation at T_C = 25°C demands active or large passive heatsinking. To maintain T_J ≤ 150°C at 90 A continuous current and 100°C case temperature, total thermal resistance (R_θJC + R_θCS + R_θSA) must be ≤ 0.56°C/W, assuming 0.33°C/W junction-to-case and 0.24°C/W case-to-sink values.

Can IRGP4790DPBF be paralleled with other IGBTs for higher current capacity?

Yes-its positive V_CE(on) temperature coefficient ensures natural current sharing. Successful paralleling requires matched gate drive impedance (<5% variation), symmetrical PCB layout, and identical heatsink mounting pressure. No external emitter resistors are needed, but individual gate resistors (10–15 Ω) are recommended to damp oscillation.

Is the integrated diode in IRGP4790DPBF suitable for freewheeling in hard-switched topologies?

Yes-the ultrafast soft-recovery diode has 170 ns t_rr, 27 A I_RR, and 770 µJ E_rec at 175°C, making it suitable for freewheeling in 16–20 kHz hard-switched inverters without snubbers. Its soft recovery minimizes voltage overshoot and EMI generation compared to standard FRD counterparts.