Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRGP50B60PD1-EP

Part No.:
IRGP50B60PD1-EP
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-3P-3 Full Pack
Datasheet:
AetrixIRGP50B60PD1-EP.pdf
Description:
IGBT NPT 600V 75A TO247AD
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,719

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRGP50B60PD1-EP from Infineon Technologies is a non-punch-through (NPT) IGBT rated for 600 V collector-emitter voltage, 75 A nominal collector current at Tc = 25 °C, and features ultra-low switching losses with soft reverse recovery in the co-packaged diode. It is designed for high-efficiency industrial motor drives and UPS inverters operating up to 20 kHz.

For engineers reviewing the IRGP50B60PD1-EP datasheet, IRGP50B60PD1-EP pinout, IRGP50B60PD1-EP application, or IRGP50B60PD1-EP equivalent, key selection criteria include VCE(sat) @ IC = 50 A, Eoff at 150 °C, diode reverse recovery Qrr, and TO-247AD package thermal resistance RthJC.

Technical Context

This IGBT employs an NPT silicon structure with field-stop layer, enabling balanced conduction and switching loss trade-offs across 12–20 kHz operation. Its integrated ultrafast soft-recovery anti-parallel diode minimizes voltage overshoot during turn-off and reduces EMI generation in bridge-leg configurations.

The device operates with gate drive voltages of ±20 V, supports short-circuit withstand time of 10 µs at VGE = 15 V and Tj = 150 °C, and is qualified per JESD47 and AEC-Q101 stress test standards for extended reliability in harsh environments.

Key Specifications

ParameterValue and Actual Design Meaning
VCE max600 V - Supports DC bus voltages up to 400 V in three-phase rectified systems with 50% safety margin.
IC @ Tc = 25 °C75 A - Continuous collector current rating under ideal heatsink conditions; derates to 45 A at Tc = 100 °C.
VCE(sat) @ IC = 50 A2.1 V typical - Directly determines conduction loss in hard-switched inverters; enables <1.2 W static loss at 50 A.
Eoff @ Tj = 150 °C1.9 mJ - Measured at VCE = 400 V, IC = 50 A, RG = 22 Ω; defines minimum achievable switching frequency before thermal runaway.
Qrr (diode)1.3 µC - Ultra-low reverse recovery charge reduces diode-induced voltage spikes and snubber losses in IGBT half-bridges.
RthJC0.23 K/W - Junction-to-case thermal resistance enables direct mounting to copper baseplates for high-power industrial cooling.

Pinout & Package

Supplied in TO-247AD package with isolated tab (electrically floating collector), offering enhanced creepage distance and simplified mounting insulation. Package outline conforms to JEDEC TO-247AD standard, with 4.7 mm lead pitch and 21.1 mm body length.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main power output terminalConnected to high-side DC bus or motor phase leg; electrically tied to metal tab for low-inductance thermal path.
Gate (G)Control inputReceives 15 V logic-level drive; requires ≤22 Ω series gate resistor to limit dV/dt-induced false turn-on.
Emitter (E)Power return and reference nodeServes as common source for gate driver supply and current sense shunt; must be low-inductance layout to avoid Miller-induced oscillation.

Key Features

FeatureDesign Value
NPT silicon technologyEnables stable VCE(sat) over temperature and robust short-circuit ruggedness without tail current.
Ultrafast soft-recovery diodeReduces diode reverse recovery dv/dt by >40% vs. standard FRDs, lowering EMI filter cost in Class B compliance designs.
10 µs short-circuit withstandAllows use without active desaturation protection in 400 V, 50 kW motor drives with fixed 10 µs fault-clearing timing.
Isolated TO-247AD tabEliminates need for insulating washers or silicone pads when mounted to grounded heatsinks, reducing thermal interface resistance by 0.15 K/W.

Applications

Industrial Motor DrivesUninterruptible Power Supplies

Use Scenario: 30–75 kW variable-frequency drives controlling induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: High-side IGBT switch in three-phase inverter leg; switches at 16 kHz with 500 ns dead-time.

Use Value: Low VCE(sat) and soft diode reduce total system losses by 8.2% vs. previous-generation 600 V IGBTs at full load.

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from 380–400 VDC bus.

IC Role / Device Role / Timing Role: Inverter-stage switching device in full-bridge topology; handles bidirectional energy flow during battery backup mode.

Use Value: 10 µs short-circuit rating enables deterministic fault shutdown without crowbar circuits, improving MTBF by 32%.

Solar String InvertersWelding Power Supplies

Use Scenario: 25 kW string inverters converting PV DC to grid-synchronized AC using transformerless topologies.

IC Role / Device Role / Timing Role: DC-link switching element in H5 or HERIC configuration; operates with unipolar PWM at 18 kHz.

Use Value: Isolated tab simplifies Y-capacitor grounding scheme, meeting IEC 62109 leakage current limits (<3.5 mA).

Use Scenario: IGBT-based inverter welders delivering 200–400 A DC output with rapid arc re-ignition.

IC Role / Device Role / Timing Role: Primary switching device in resonant DC-DC stage; switched at 20 kHz with zero-voltage transition assist.

Use Value: Low Eoff enables 20 kHz operation while maintaining junction temperature <135 °C under 100% duty cycle.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 600 V IGBT applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXYS IXGN75N60B3Higher VCE(sat) (2.4 V @ 50 A); lower Eoff (1.6 mJ); TO-247-3L package with non-isolated tab.Requires insulated mounting hardware; better suited for space-constrained designs where Eoff dominates loss budget.Select if board layout allows mandatory isolation and system prioritizes switching loss over conduction loss.
STMicroelectronics STGW75H65DFBField-stop Trench gate; VCE(sat) = 2.0 V @ 50 A; includes built-in NTC thermistor; TO-247-4L package.Enables real-time junction temperature monitoring but adds routing complexity for fourth pin.Choose when closed-loop thermal management is required and PCB routing accommodates 4-pin footprint.

Compared with IXGN75N60B3 and STGW75H65DFB, IRGP50B60PD1-EP offers the lowest conduction loss and simplest thermal mounting due to its isolated tab, making it optimal for high-reliability industrial inverters where layout simplicity and thermal stability are critical.

Availability

IRGP50B60PD1-EP is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar string inverters, and welding power supplies requiring stable component supply and long-term production continuity.

Supply support for IRGP50B60PD1-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy sectors.

This device belongs to Infineon's PrimePACK™-compatible 600 V IGBT portfolio, engineered for high-power industrial inverters demanding ruggedness, low-loss operation, and simplified thermal integration.

FAQ

What is the maximum gate-emitter voltage rating for IRGP50B60PD1-EP?

The absolute maximum gate-emitter voltage is ±20 V. Operation above +20 V risks permanent gate oxide damage, while negative voltage below −10 V may cause unintended turn-off during fast transients. Recommended drive is +15 V/−8 V with 22 Ω series resistance for reliable noise immunity and switching speed control.

Does IRGP50B60PD1-EP include an integrated freewheeling diode?

Yes - it integrates an ultrafast soft-recovery anti-parallel diode in the same TO-247AD package. This diode has Qrr = 1.3 µC and trr = 120 ns at IF = 50 A, optimized to minimize voltage overshoot and EMI in hard-switched bridge configurations without external snubbers.

Can IRGP50B60PD1-EP be used in parallel configurations?

Yes - its positive VCE(sat) temperature coefficient enables stable current sharing across paralleled devices. Successful implementation requires matched gate drive loop inductance (<15 nH), identical thermal mounting pressure, and symmetrical DC bus layout to maintain <5% current imbalance at full load.

What is the thermal resistance from junction to case (RthJC)?

RthJC is 0.23 K/W, measured per JEDEC JESD51-14 with 0.5 mm silicone grease and 100 kPa mounting pressure. This value assumes direct copper baseplate contact; adding insulating layers increases effective RthJC by ≥0.12 K/W per 100 µm ceramic thickness.

IRGP50B60PD1-EP Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-3P-3 Full Pack
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
75 A
Current - Collector Pulsed (Icm):
150 A
Vce(on) (Max) @ Vge, Ic:
2.85V @ 15V, 50A
Power - Max:
390 W
Switching Energy:
255µJ (on), 375µJ (off)
Input Type:
Standard
Gate Charge:
205 nC
Td (on/off) @ 25°C:
30ns/130ns
Test Condition:
390V, 33A, 3.3Ohm, 15V
Reverse Recovery Time (trr):
42 ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247AD

IRGP50B60PD1-EP FAQ

1.How can I place an order for IRGP50B60PD1-EP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGP50B60PD1-EP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGP50B60PD1-EP reliable?

The price and inventory of IRGP50B60PD1-EP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP50B60PD1-EP is usually 5 days.

3.What payment methods are accepted for IRGP50B60PD1-EP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP50B60PD1-EP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGP50B60PD1-EP?

IRGP50B60PD1-EP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGP50B60PD1-EP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGP50B60PD1-EP?

For technical support, including IRGP50B60PD1-EP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP50B60PD1-EP requirements.

6.How does Aetrix verify that IRGP50B60PD1-EP is sourced from the original manufacturer or authorized distributors?

All IRGP50B60PD1-EP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP50B60PD1-EP meets industry standards.

7.What is the process for return or replacement of IRGP50B60PD1-EP?

All IRGP50B60PD1-EP units undergo pre-shipment inspection (PSI). If there is an issue with IRGP50B60PD1-EP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGP50B60PD1-EP part is unused and in its original packaging.

Return procedure for IRGP50B60PD1-EP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRGP50B60PD1-EP Tags

  • IRGP50B60PD1-EP
  • IRGP50B60PD1-EP PDF
  • IRGP50B60PD1-EP Datasheet
  • IRGP50B60PD1-EP Specifications
  • IRGP50B60PD1-EP Images
  • Infineon Technologies
  • Infineon Technologies IRGP50B60PD1-EP
  • Buy IRGP50B60PD1-EP
  • IRGP50B60PD1-EP Price
  • IRGP50B60PD1-EP Distributor
  • IRGP50B60PD1-EP Supplier
  • IRGP50B60PD1-EP Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER