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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGP50B60PDPBF

Name: IRGP50B60PDPBF
Brand: Infineon Technologies
SKU: IRGP50B60PDPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGP50B60PDPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IRGP50B60PDPBF.pdf

Description:: IGBT NPT 600V 75A TO247AC

Quantity:: RFQ Add To RFQ list

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Inventory:9,806

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Product details

Overview

IRGP50B60PDPBF from Infineon (formerly International Rectifier) is a 600 V, 50 A NPT IGBT with co-packaged ultrafast soft-recovery HEXFRED diode in TO-247AC package. It delivers V_CE(on) = 2.00 V @ 33 A/15 V, 150 kHz max switching frequency, and R_θJC(IGBT) = 0.34 °C/W - optimized for telecom/server SMPS and PFC circuits.

For engineers reviewing the IRGP50B60PDPBF datasheet, IRGP50B60PDPBF pinout, IRGP50B60PDPBF application, or IRGP50B60PDPBF equivalent, key selection criteria include its low tail current, tight parameter distribution, clamped inductive load rating (150 A), and integrated diode reverse recovery performance (t_rr = 50–75 ns @ 25°C).

Technical Context

This IGBT uses Non-Punch-Through (NPT) technology with positive temperature coefficient for stable parallel operation. Its gate threshold voltage (V_GE(th) = 3.0–5.0 V) and transconductance (g_fe = 42 S) support robust drive margin across –40°C to +150°C junction range.

The integrated HEXFRED diode provides soft reverse recovery (Q_rr = 112–375 nC, I_rr = 4.5–10 A) and low forward voltage (V_FM = 1.3–2.0 V), enabling ZVS operation in resonant topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - supports 400 V DC bus designs with 50% safety margin against transients
I_C @ T_C = 25°C	75 A - enables high-current single-device solutions in compact SMPS layouts
V_CE(on) typ.	2.00 V @ 33 A/15 V - reduces conduction loss to ~66 W at rated current, easing thermal design
E_off typ.	380 µJ @ 33 A/390 V - enables efficient 100–150 kHz switching with minimal heatsink requirement
t_rr (diode)	50–75 ns @ 25°C - suppresses voltage overshoot and EMI in hard-switched PFC stages
R_θJC (IGBT)	0.34 °C/W - allows direct mounting to heatsink with <10°C rise at 100 W dissipation
Q_g total	240–360 nC - determines gate driver peak current (≥2 A) and PCB trace inductance limits

Pinout & Package

TO-247AC package: isolated tab (collector), 3-pin through-hole outline with 0.21 g mass and 300°C soldering tolerance at 1.6 mm from case. Mounting torque: 10 lbf·in (1.1 N·m).

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main power output terminal	Connected to high-side switch node; electrically tied to metal tab for low-inductance heatsink coupling
Gate (G)	Control input	Requires low-impedance drive path (R_G = 3.3 Ω typical); sensitive to dV/dt-induced turn-on
Emitter (E)	Power return and reference	Serves as common source for IGBT and diode; must be low-inductance connection to minimize shoot-through risk

Key Features

Feature	Design Value
NPT structure with positive tempco	Enables stable current sharing in paralleled configurations without external ballast resistors
Ultrafast soft-recovery co-pack diode	Eliminates need for external anti-parallel diode in half-bridge PFC, reducing BOM count and layout area
Minimal tail current	Reduces turn-off energy by >20% vs. standard IGBTs, critical for high-frequency ZVS designs
Tighter parameter distribution	±10% V_CE(on) spread ensures predictable thermal behavior across production lots
High RBSOA (full square)	Supports 480 V clamp at 150 A pulse without derating - simplifies overcurrent protection design

Applications

Telecom/Server SMPS

PFC Circuits

Use Scenario: Primary-side switching in 1–3 kW telecom rectifiers operating at 100–150 kHz.

IC Role / Device Role / Timing Role: High-side IGBT switch in phase-shifted full-bridge topology with synchronous rectification.

Use Value: Low V_CE(on) and minimal tail current reduce conduction + switching losses to <1.2% total efficiency penalty at full load.

Use Scenario: Boost PFC stage in server power supplies handling 2.5 kW at universal AC input.

IC Role / Device Role / Timing Role: Active switch in continuous conduction mode (CCM) boost converter with 65 kHz switching.

Use Value: Integrated HEXFRED diode's soft recovery cuts EMI filter size by 30% and eliminates snubber losses.

Uninterruptible Power Supplies

Consumer Power Supplies

Use Scenario: Inverter stage of online UPS systems delivering clean 230 VAC output from 400 VDC bus.

IC Role / Device Role / Timing Role: Half-bridge leg switch with bidirectional current capability during battery backup mode.

Use Value: Clamped inductive load rating (150 A) supports 200% surge current for 10 ms without desaturation.

Use Scenario: Main power switch in high-efficiency 500 W gaming PSU with active PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: Primary-side switch in LLC half-bridge, leveraging diode for freewheeling during dead time.

Use Value: Co-pack diode V_FM = 1.3 V @ 25 A/125°C maintains <0.5 W conduction loss during light-load burst mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN50N60B3	600 V/50 A, trench-gate PT IGBT; lower Q_g (180 nC) but higher V_CE(on) (2.3 V typ.)	Better suited for <100 kHz fixed-frequency hard-switching; less optimal for ZVS due to higher tail current	Select when gate drive power budget is constrained and thermal margin exceeds 15°C
STMicroelectronics STGW50H60DLF	600 V/50 A, Trench-Stop IGBT; integrated fast diode (t_rr = 65 ns), R_θJC = 0.37 °C/W	Valid for same PFC/SMPS roles but requires larger heatsink due to 9% higher thermal resistance	Prefer when sourcing from ST-authorized channels is required for automotive-qualified supply chains

Compared with IXGN50N60B3 and STGW50H60DLF, IRGP50B60PDPBF offers the lowest combined conduction–switching loss at 125°C and best RBSOA margin - making it optimal for high-reliability telecom and industrial SMPS where thermal headroom is limited.

Availability

IRGP50B60PDPBF is available at Aetrix Electronics and suitable for telecom/server SMPS, PFC circuits, uninterruptible power supplies, and consumer electronics power supplies requiring stable component supply and long-term lifecycle continuity.

Supply support for IRGP50B60PDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This device belongs to Infineon's WARP2 series of high-speed IGBTs designed specifically for high-frequency, high-efficiency switched-mode power supplies in datacenter and telecom infrastructure.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies R_G = 3.3 Ω for characterization at 125°C. For reliable turn-off across temperature and process variation, use 2.2–4.7 Ω with ≤100 pF gate loop capacitance. Values >6.8 Ω increase t_d(off) beyond 160 ns and risk cross-conduction in bridge configurations.

Can IRGP50B60PDPBF replace MOSFETs in existing 600 V designs?

Yes - its FET-equivalent ID = 50 A and R_CE(on) = 61 mΩ allow drop-in replacement in many 600 V superjunction MOSFET designs. However, gate drive voltage must be increased to 15 V (vs. typical 10 V for MOSFETs), and layout must accommodate higher dI/dt sensitivity during turn-on.

Is the co-packaged diode rated for continuous conduction in synchronous rectification?

Yes - the diode supports I_F = 50 A continuous at T_C = 25°C and 25 A at T_C = 100°C, with V_FM = 1.5 V typ. @ 50 A. Its soft recovery and low Q_rr make it suitable for synchronous rectification in LLC and phase-shifted topologies up to 150 kHz.

Does this IGBT require negative gate bias for robust noise immunity?

No - the V_GE(th) = 4.0 V typ. and positive temperature coefficient provide inherent noise margin. However, applying –5 V during off-state improves immunity to Miller-induced false turn-on in high-dV/dt environments (e.g., >5 kV/µs), especially when paralleling multiple devices.

IRGP50B60PDPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 75 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.6V @ 15V, 50A

Power - Max:: 370 W

Switching Energy:: 360µJ (on), 380µJ (off)

Input Type:: Standard

Gate Charge:: 240 nC

Td (on/off) @ 25°C:: 34ns/130ns

Test Condition:: 390V, 33A, 3.3Ohm, 15V

Reverse Recovery Time (trr):: 50 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRGP50B60PDPBF FAQ

1.How can I place an order for IRGP50B60PDPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGP50B60PDPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGP50B60PDPBF reliable?

The price and inventory of IRGP50B60PDPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP50B60PDPBF is usually 5 days.

3.What payment methods are accepted for IRGP50B60PDPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP50B60PDPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGP50B60PDPBF?

IRGP50B60PDPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGP50B60PDPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGP50B60PDPBF?

For technical support, including IRGP50B60PDPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP50B60PDPBF requirements.

6.How does Aetrix verify that IRGP50B60PDPBF is sourced from the original manufacturer or authorized distributors?

All IRGP50B60PDPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP50B60PDPBF meets industry standards.

7.What is the process for return or replacement of IRGP50B60PDPBF?

All IRGP50B60PDPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGP50B60PDPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGP50B60PDPBF part is unused and in its original packaging.

Return procedure for IRGP50B60PDPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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