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Infineon Technologies IRGP6630DPBF
- Part No.:
- IRGP6630DPBF
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
IRGP6630DPBF.pdf
- Description:
- IGBT 600V 47A TO247AC
- Quantity:
- Payment:
- Shipping:
Inventory:4,967
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Product details
Overview
IRGP6630DPBF from Infineon Technologies (formerly International Rectifier) is a 600 V, 47 A insulated gate bipolar transistor with integrated ultrafast soft-recovery diode in TO-247AC package. It delivers 1.65 V typical VCE(on) at 18 A and 15 V gate drive, supports 5 µs short-circuit withstand time at 150 °C, and targets high-efficiency welding inverters and H-bridge DC-AC converters.
For engineers reviewing the IRGP6630DPBF datasheet, IRGP6630DPBF pinout, IRGP6630DPBF application, or IRGP6630DPBF equivalent, this device is selected for rugged hard-switching power stages requiring square RBSOA up to 175 °C junction temperature, low conduction + switching loss trade-off, and parallel operation capability via positive VCE(on) temperature coefficient.
Technical Context
This IGBT integrates a co-packaged ultrafast soft-recovery diode optimized for full-bridge hard-switching topologies. Its 5.9 °C/W diode RθJC and 0.78 °C/W IGBT RθJC enable independent thermal management of both devices under asymmetric load conditions.
The device features a square reverse bias safe operating area (RBSOA) rated at 175 °C, 72 A, 480 V, and supports clamped inductive load currents up to 72 A with 20 V gate drive. Its 15 ns typical turn-off delay and 80 ns fall time at 175 °C ensure precise timing control in high-frequency (>40 kHz) welding applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 600 V - Withstands DC bus voltages up to 480 V in 400 V nominal systems with margin for transients. |
| IC @ TC = 100 °C | 30 A - Sustains continuous output current in compact heatsink designs with case temperature up to 100 °C. |
| VCE(on) typ. | 1.65 V @ 18 A, 15 VGE, 25 °C - Enables <1.2 W conduction loss per device at 18 A, reducing thermal load. |
| Eoff typ. | 570 µJ @ 18 A, 400 V, 175 °C - Defines switching energy budget for gate driver sizing and snubber design in hard-switched bridges. |
| tSC | 5 µs @ VCC = 400 V, TJ = 150 °C - Allows implementation of fast-acting desaturation protection without false triggering. |
| Qg | 30 nC - Determines required gate driver peak current (≥1.4 A for 22 Ω gate resistor and 15 V swing). |
| RθJC (IGBT) | 0.78 °C/W - Sets minimum thermal interface conductance needed to maintain TJ ≤ 175 °C at 96 W dissipation. |
Pinout & Package
IRGP6630DPBF uses the TO-247AC 3-pin through-hole package with isolated tab (collector connected to case). Pin assignment is standardized: Pin 1 = Gate, Pin 2 = Collector, Pin 3 = Emitter. The metal tab serves as the collector terminal and primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate terminal | Controls IGBT conduction; requires ≥±20 V rating and low-inductance layout to minimize switching overshoot. |
| Pin 2 (C) | Collector terminal / case tab | Primary high-side power connection and main thermal interface; must be electrically isolated from heatsink unless system ground referenced. |
| Pin 3 (E) | Emitter terminal | Low-side return path; carries full load current and diode reverse recovery current; requires Kelvin sensing for accurate gate drive referencing. |
Key Features
| Feature | Design Value |
|---|---|
| Square RBSOA at 175 °C | Enables reliable operation under voltage-current stress combinations common in inductive load commutation without derating. |
| Ultrafast soft-recovery diode | 70 ns trr, 15 A IRR, and 180 µJ Erec reduce voltage spikes and EMI during freewheeling in bridge legs. |
| Positive VCE(on) tempco | Ensures natural current sharing when paralleling multiple devices without external ballasting resistors. |
| 5 µs short-circuit withstand | Supports robust overcurrent protection schemes using desaturation detection with <5 µs response latency. |
| Lead-free, RoHS-compliant | Meets environmental compliance requirements for industrial and commercial equipment without compromising solderability or reliability. |
Applications
| Welding Inverter Power Stage | H-Bridge Motor Drive |
|---|---|
|
Use Scenario: High-duty-cycle arc welding with 40 kHz PWM switching and >300 A peak output current. IC Role / Device Role / Timing Role: Main switching device in single-phase or three-phase inverter leg; handles bidirectional current via integrated diode during freewheeling. Use Value: Low 1.65 V VCE(on) and 570 µJ Eoff at 175 °C reduce thermal stress and enable air-cooled designs in portable welders. |
Use Scenario: Industrial servo drive delivering 15–30 kW to PMSM/BLDC motors with regenerative braking. IC Role / Device Role / Timing Role: Half-bridge switch with integrated diode conducting reverse recovery current during PWM dead-time intervals. Use Value: Soft 70 ns diode trr and 15 A IRR suppress voltage overshoot across motor windings, eliminating need for external snubbers. |
| Induction Heating Generator | UPS Inverter Module |
|
Use Scenario: Resonant tank driver for 20–100 kW induction furnaces operating at 20–50 kHz. IC Role / Device Role / Timing Role: High-side switch in series-resonant half-bridge; conducts high di/dt currents during zero-voltage switching transitions. Use Value: Square RBSOA up to 175 °C ensures stable operation under transient overvoltage during resonant collapse events. |
Use Scenario: Online double-conversion UPS with 10–20 kVA capacity and battery backup mode. IC Role / Device Role / Timing Role: Output stage IGBT in DC-AC inverter; switches 400 V DC bus to generate clean 230 V AC sine wave. Use Value: 5 µs short-circuit rating enables fast fault shutdown during output short or overload, protecting downstream transformers and filters. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT with integrated diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN60N60A3 | 600 V, 60 A, 2.1 V VCE(on), 0.55 °C/W RθJC, no integrated diode | Requires external ultrafast diode; higher conduction loss but lower thermal resistance | Select when discrete diode optimization is preferred and board space allows separate placement. |
| STMicroelectronics STGW40H65DFB | 650 V, 40 A, 1.75 V VCE(on), 0.85 °C/W RθJC, integrated diode with 100 ns trr | Higher voltage rating but slower diode recovery increases Erec by ~40% vs. IRGP6630DPBF | Select for 650 V bus systems where diode speed is less critical than voltage margin. |
Compared with IXGN60N60A3 and STGW40H65DFB, IRGP6630DPBF offers the lowest combined conduction–switching loss at 400 V bus and best diode softness for EMI-sensitive welding and induction heating, while maintaining industry-standard TO-247AC footprint and thermal interface.
Availability
IRGP6630DPBF is available at Aetrix Electronics and suitable for welding inverters, H-bridge motor drives, induction heating generators, and UPS inverter modules requiring stable component supply across multi-year production cycles.
Supply support for IRGP6630DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with roots in International Rectifier's high-power discrete portfolio.
IRGP6630DPBF belongs to Infineon's legacy High-Speed IGBT family designed specifically for high-frequency industrial inverters demanding low-loss switching, rugged short-circuit behavior, and integrated diode performance in TO-247 packages.
FAQ
What is the maximum gate-emitter voltage rating for IRGP6630DPBF?
The absolute maximum continuous gate-to-emitter voltage is ±20 V. Exceeding this rating risks permanent gate oxide damage. Gate drive circuits must limit transient overshoot-especially during turn-off-to ≤18 V using clamping diodes or active gate control, particularly when driving inductive loads with high di/dt.
Does IRGP6630DPBF support parallel operation, and what design considerations apply?
Yes, IRGP6630DPBF supports parallel operation due to its positive VCE(on) temperature coefficient, which promotes current sharing as junction temperature rises. Critical practices include matched gate drive impedance (≤5% variation), symmetrical PCB layout with Kelvin emitter routing, and individual gate resistors to damp oscillation-verified via oscilloscope measurement of VGE ringing during switching.
How does the integrated diode differ from standard FRD types in hard-switching applications?
The integrated diode features ultrafast soft recovery (70 ns trr, 15 A IRR) and low reverse recovery charge (QRR ≈ 120 nC), minimizing voltage spikes and EMI during commutation. Unlike standard fast recovery diodes, its softness factor (IRR/di/dt) is optimized to avoid abrupt current reversal, reducing stress on adjacent IGBTs in bridge configurations.
What thermal interface material is recommended for mounting IRGP6630DPBF to a heatsink?
A thermally conductive, electrically insulating grease or phase-change pad with thermal conductivity ≥1.5 W/m·K and bond line thickness ≤0.1 mm is recommended. TO-247AC mounting torque must be 10 lbf·in (1.1 N·m); excessive torque distorts the case and degrades RθJC. Surface flatness ≤0.05 mm and RMS roughness <0.8 µm ensure optimal contact.
IRGP6630DPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 47 A
- Current - Collector Pulsed (Icm):
- 54 A
- Vce(on) (Max) @ Vge, Ic:
- 1.95V @ 15V, 18A
- Power - Max:
- 192 W
- Switching Energy:
- 75µJ (on), 350µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 30 nC
- Td (on/off) @ 25°C:
- 40ns/95ns
- Test Condition:
- 400V, 18A, 22Ohm, 15V
- Reverse Recovery Time (trr):
- 70 ns
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
IRGP6630DPBF FAQ
1.How can I place an order for IRGP6630DPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRGP6630DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRGP6630DPBF reliable?
The price and inventory of IRGP6630DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP6630DPBF is usually 5 days.
3.What payment methods are accepted for IRGP6630DPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP6630DPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRGP6630DPBF?
IRGP6630DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRGP6630DPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRGP6630DPBF?
For technical support, including IRGP6630DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP6630DPBF requirements.
6.How does Aetrix verify that IRGP6630DPBF is sourced from the original manufacturer or authorized distributors?
All IRGP6630DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP6630DPBF meets industry standards.
7.What is the process for return or replacement of IRGP6630DPBF?
All IRGP6630DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGP6630DPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRGP6630DPBF part is unused and in its original packaging.
Return procedure for IRGP6630DPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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