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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGP6640D-EPBF

Name: IRGP6640D-EPBF
Brand: Infineon Technologies
SKU: IRGP6640D-EPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGP6640D-EPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IRGP6640D-EPBF.pdf

Description:: IGBT 600V 40A TO247AD

Quantity:: RFQ Add To RFQ list

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Inventory:8,505

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Product details

Overview

IRGP6640D-EPBF from Infineon Technologies (formerly International Rectifier) is a 600 V, 40 A (T_C = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery anti-parallel diode in TO-247AD package. It delivers 1.65 V typical V_CE(on) at 24 A/15 V_GE/25°C, 5 µs short-circuit withstand capability, and R_θJC = 0.75°C/W (IGBT) for high-power welding and H-bridge converter applications.

For engineers reviewing the IRGP6640D-EPBF datasheet, IRGP6640D-EPBF pinout, IRGP6640D-EPBF application, or IRGP6640D-EPBF equivalent, key selection criteria include its square RBSOA up to 175°C, positive V_CE(on) temperature coefficient for parallel operation, clamped inductive load rating of 96 A, and optimized diode reverse recovery (E_rec = 120 µJ, t_rr = 70 ns at 175°C).

Technical Context

This IGBT employs a trench-gate field-stop structure enabling low conduction loss and fast switching with soft diode recovery. Its 5 µs short-circuit safe operating area (SCSOA) at V_CC = 400 V and T_J = 150°C supports robust protection in hard-switched inverters. The integrated diode features 2.8 V max V_F at 8 A/25°C and 1.3 V at 8 A/175°C, with peak reverse recovery current (I_RR) ≤ 21 A under specified conditions.

The device operates across -40°C to +175°C junction temperature range and exhibits a +0.7 V/°C breakdown voltage temperature coefficient. Gate threshold voltage (V_GE(th)) ranges 4.0–6.5 V with -18 mV/°C temperature coefficient, ensuring stable turn-on behavior across temperature. Input capacitance (C_ies) is 1550 pF at V_GE = 0 V, supporting predictable gate drive design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands DC bus voltages up to 480 V in 400 V nominal systems with margin.
I_C @ T_C = 100°C	40 A - Continuous output current capability at heatsink temperature of 100°C.
V_CE(on) typ.	1.65 V @ 24 A/15 V_GE/25°C - Low conduction loss enabling >98% efficiency in 10–20 kHz welder inverters.
t_SC	5 µs - Enables reliable desaturation-based short-circuit protection without external sensing delay.
R_θJC (IGBT)	0.75 °C/W - Allows thermal design with <10 K rise per 100 W dissipation directly to heatsink.
E_rec	120 µJ @ T_J = 175°C - Low diode recovery energy reduces snubber stress and EMI in full-bridge topologies.
Q_g	50 nC - Determines gate driver peak current requirement (~5 A for 10 ns rise time with 10 Ω resistor).

Pinout & Package

IRGP6640D-EPBF uses the TO-247AD package - a 3-pin, through-hole, isolated-tab variant of TO-247 with collector-connected tab for direct heatsink mounting and enhanced creepage/clearance versus standard TO-247AC.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Tab)	Main power output terminal (high-side switch node)	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink.
Gate	Control input for IGBT channel	High-impedance MOS-controlled terminal; requires 15 V drive for full saturation and ±20 V absolute max rating.
Emitter	Power return path and diode cathode reference	Common emitter for IGBT and anti-parallel diode; serves as current sense and gate drive reference point.

Key Features

Feature	Design Value
Square RBSOA up to 175°C	Enables reliable hard-switching at full voltage/current without derating at elevated temperatures.
Positive V_CE(on) tempco	Ensures inherent current sharing stability when paralleling multiple devices without external ballasting.
Ultrafast soft-recovery diode	Reduces diode-induced voltage overshoot and EMI during commutation in bridge-leg configurations.
Lead-free, RoHS-compliant	Meets environmental compliance requirements for industrial and commercial equipment without exemption waivers.
Clamped inductive load rating	96 A at V_GE = 20 V enables robust operation under worst-case inductive fault conditions.

Applications

Industrial Welding Inverters

H-Bridge Motor Drives

Use Scenario: High-frequency (10–20 kHz) DC output welding power supplies using full-bridge topology with active current control.

IC Role / Device Role / Timing Role: Main switching device in primary-side inverter stage; handles 400–600 V DC bus and 30–50 A RMS load current.

Use Value: 1.65 V V_CE(on) and 690 µJ total switching loss at 25°C reduce thermal load by ~15% vs. legacy 650 V IGBTs, enabling smaller heatsinks.

Use Scenario: Regenerative braking and bidirectional torque control in servo drives for CNC machines and robotics.

IC Role / Device Role / Timing Role: Half-bridge leg switch with integrated freewheeling diode; operates at 8–16 kHz PWM with 50% duty cycle.

Use Value: 70 ns diode t_rr and 120 µJ E_rec minimize cross-conduction losses and snubber sizing, improving system efficiency by 2–3%.

Induction Heating Systems

UPS Inverter Stages

Use Scenario: Medium-frequency (20–50 kHz) resonant tank drivers for domestic and commercial induction cooktops.

IC Role / Device Role / Timing Role: High-side switch in asymmetrical half-bridge; subjected to repetitive 5–10 µs short-circuit events during zero-voltage switching transitions.

Use Value: 5 µs SCSOA and 175°C max junction temperature allow continuous operation without thermal shutdown during transient overloads.

Use Scenario: Online double-conversion UPS units delivering clean 50/60 Hz sine wave output from rectified AC or battery DC input.

IC Role / Device Role / Timing Role: Output inverter switch handling 400 V DC link and 30 A RMS output current into resistive/inductive loads.

Use Value: Square RBSOA and 0.75°C/W R_θJC support stable 100% load operation at 40°C ambient without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT with integrated diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN60N60A3	600 V/60 A, R_θJC = 0.45°C/W, V_CE(on) = 1.8 V @ 30 A, no integrated diode	Requires external ultrafast diode; higher current rating but larger footprint and higher gate charge (95 nC)	Preferred where higher current headroom and lower thermal resistance outweigh added board area and component count.
STMicroelectronics STGW40H65DFB	650 V/40 A, R_θJC = 0.7°C/W, V_CE(on) = 1.7 V @ 20 A, integrated diode with t_rr = 120 ns	Higher voltage rating but slower diode recovery increases E_rec to 210 µJ, raising snubber losses in high-frequency bridges	Selected when 650 V bus margin is required and switching frequency remains below 10 kHz to limit diode losses.

Compared with IXGN60N60A3 and STGW40H65DFB, IRGP6640D-EPBF offers the lowest combined conduction and recovery loss at 10–20 kHz, optimal thermal resistance for TO-247 mounting, and built-in diode matching-making it ideal for compact, high-efficiency welding and motor drive inverters where layout space and EMI are critical.

Availability

IRGP6640D-EPBF is available at Aetrix Electronics and suitable for industrial welding inverters, H-bridge motor drives, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for IRGP6640D-EPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This device belongs to Infineon's PrimePACK™-compatible 600 V IGBT portfolio designed specifically for high-reliability, medium-frequency industrial inverters where ruggedness, thermal performance, and integrated diode optimization are essential.

FAQ

What is the maximum gate-emitter voltage rating for IRGP6640D-EPBF?

The absolute maximum continuous gate-to-emitter voltage is ±20 V. Exceeding this rating risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and -5 V to -10 V for turn-off to ensure fast, noise-immune switching and prevent spurious conduction during high dv/dt events.

Does IRGP6640D-EPBF require a negative gate voltage for reliable turn-off?

No negative gate voltage is strictly required, but applying -5 V to -10 V improves noise immunity and ensures complete depletion of the channel during high-speed switching in noisy industrial environments. The device remains fully functional with 0 V turn-off, though Miller-induced false triggering risk increases above 10 kHz.

How does the integrated diode differ from standard FRDs in terms of recovery behavior?

Its ultrafast soft-recovery diode exhibits 70 ns reverse recovery time (t_rr) and 21 A peak reverse recovery current (I_RR) at 175°C, with minimal current tail and low E_rec (120 µJ). This reduces voltage overshoot and EMI compared to standard fast recovery diodes, which typically show longer tails and higher I_RR spikes.

Can IRGP6640D-EPBF be paralleled for higher current capacity?

Yes-its positive V_CE(on) temperature coefficient ensures natural current sharing across temperature gradients. Successful paralleling requires matched gate drive impedance (<±5%), symmetrical PCB layout, and identical heatsink contact resistance. Derating to 85% of total rated current is recommended for reliability.

IRGP6640D-EPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 53 A

Current - Collector Pulsed (Icm):: 72 A

Vce(on) (Max) @ Vge, Ic:: 1.95V @ 15V, 24A

Power - Max:: 200 W

Switching Energy:: 90µJ (on), 600µJ (off)

Input Type:: Standard

Gate Charge:: 50 nC

Td (on/off) @ 25°C:: 40ns/100ns

Test Condition:: 400V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr):: 70 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AD

IRGP6640D-EPBF FAQ

1.How can I place an order for IRGP6640D-EPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGP6640D-EPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGP6640D-EPBF reliable?

The price and inventory of IRGP6640D-EPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP6640D-EPBF is usually 5 days.

3.What payment methods are accepted for IRGP6640D-EPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP6640D-EPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGP6640D-EPBF?

IRGP6640D-EPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGP6640D-EPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGP6640D-EPBF?

For technical support, including IRGP6640D-EPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP6640D-EPBF requirements.

6.How does Aetrix verify that IRGP6640D-EPBF is sourced from the original manufacturer or authorized distributors?

All IRGP6640D-EPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP6640D-EPBF meets industry standards.

7.What is the process for return or replacement of IRGP6640D-EPBF?

All IRGP6640D-EPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGP6640D-EPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGP6640D-EPBF part is unused and in its original packaging.

Return procedure for IRGP6640D-EPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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