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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGP6640DPBF

Name: IRGP6640DPBF
Brand: Infineon Technologies
SKU: IRGP6640DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGP6640DPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IRGP6640DPBF.pdf

Description:: IGBT 600V 53A 200W TO247AC

Quantity:: RFQ Add To RFQ list

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Inventory:5,320

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Product details

Overview

IRGP6640DPBF from Infineon Technologies (formerly International Rectifier) is a 600 V, 53 A insulated gate bipolar transistor with integrated ultrafast soft-recovery diode in TO-247AC package. It delivers 1.65 V typical V_CE(on) at 24 A and 15 V gate drive, supports 5 µs short-circuit withstand time at 150 °C, and operates up to 175 °C junction temperature-designed for high-efficiency welding inverters and H-bridge motor drives.

For engineers reviewing the IRGP6640DPBF datasheet, IRGP6640DPBF pinout, IRGP6640DPBF application, or IRGP6640DPBF equivalent, key selection criteria include its square RBSOA at 175 °C, 96 A clamped inductive load current, 690 µJ total switching loss at 25 °C, and optimized diode reverse recovery (E_rec = 120 µJ, t_rr = 70 ns) for hard-switched full-bridge topologies.

Technical Context

This IGBT employs a trench-gate field-stop structure with an integrated co-packaged ultrafast soft-recovery diode. Its positive V_CE(on) temperature coefficient enables stable parallel operation, while the 5 µs short-circuit rating (V_CC = 400 V, T_J = 150 °C) supports robust protection circuitry in industrial inverters.

The device features square reverse bias safe operating area (RBSOA) up to 600 V and 96 A at 175 °C, and its diode exhibits low Q_RR (16–24 nC) and controlled I_RR (21 A peak) under 175 °C conditions-critical for minimizing voltage overshoot and EMI in high-frequency H-bridge converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands DC bus voltages up to 480 V in 400 V nominal systems with margin
I_C @ T_C = 100 °C	40 A - Sustains continuous conduction in thermally constrained welder power stages
V_CE(on) typ.	1.65 V @ 24 A, 15 V_GE, 25 °C - Enables <1.5 W conduction loss per device at rated current
E_total	690 µJ @ 25 °C - Total switching energy at 400 V, 24 A, 10 Ω gate resistor
R_θJC (IGBT)	0.75 °C/W - Enables 100 W dissipation with ≤75 °C case-to-junction rise at 100 °C case
t_SC	5 µs @ T_J = 150 °C - Allows reliable desaturation detection and gate shutdown before thermal runaway
E_rec	120 µJ @ T_J = 175 °C - Low diode recovery energy reduces snubber stress and system losses

Pinout & Package

IRGP6640DPBF uses the industry-standard TO-247AC package with isolated tab (collector connected to case), offering mechanical robustness and thermal performance suitable for bolt-down heatsink mounting. The three-terminal configuration supports direct integration into half-bridge modules or discrete inverter legs.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Electrically tied to metal tab; requires insulating washer when mounted to grounded heatsink
Gate (G)	Control input for IGBT channel	High-impedance MOS-controlled terminal; requires 15 V ±10% drive for full saturation
Emitter (E)	Current return path and reference node	Serves as common source for both IGBT and anti-parallel diode; defines local ground reference

Key Features

Feature	Design Value
Ultrafast soft-recovery diode	70 ns t_rr, 120 µJ E_rec, and 21 A I_RR at 175 °C minimize voltage spikes and EMI in hard-switched bridges
Square RBSOA at 175 °C	Supports 600 V × 96 A operation without secondary breakdown-enables reliable overvoltage transient handling
Positive V_CE(on) tempco	Ensures natural current sharing in paralleled configurations without external ballasting resistors
5 µs short-circuit rating	Validated at V_CC = 400 V and T_J = 150 °C-provides deterministic timing window for protection logic
Lead-free, RoHS-compliant	Meets environmental compliance requirements for industrial and welding equipment sold globally

Applications

Welding Inverter Power Stage

H-Bridge Motor Drive

Use Scenario: High-duty-cycle arc welding with rapid current ramping and frequent short-circuit events during metal transfer.

IC Role / Device Role / Timing Role: Main switching element in primary-side inverter leg, operating at 20–50 kHz with precise current control and desaturation fault response.

Use Value: 5 µs short-circuit withstand time enables fast fault detection before thermal damage; low V_CE(on) reduces heat generation during sustained 40 A output.

Use Scenario: Bidirectional torque control in industrial servo drives requiring regenerative braking and zero-crossing commutation.

IC Role / Device Role / Timing Role: Half-bridge switch pair controlling motor phase voltage polarity and magnitude via PWM modulation.

Use Value: Optimized diode reverse recovery (t_rr = 70 ns, E_rec = 120 µJ) minimizes shoot-through risk and improves efficiency during freewheeling intervals.

Induction Heating Generator

UPS Inverter Output Stage

Use Scenario: Medium-frequency (20–100 kHz) resonant tank excitation for metal heating in industrial furnaces.

IC Role / Device Role / Timing Role: High-current switching device in series-resonant inverter topology, handling repetitive 96 A clamped inductive loads.

Use Value: Square RBSOA up to 600 V/96 A ensures stable operation under resonant overvoltage transients; 175 °C max junction temperature supports compact heatsink design.

Use Scenario: Online double-conversion UPS delivering clean sine-wave output during grid failure with high crest factor capability.

IC Role / Device Role / Timing Role: Final-stage IGBT in full-bridge inverter converting DC bus to regulated AC output.

Use Value: Low total switching loss (690 µJ @ 25 °C) improves system efficiency at partial load; soft diode recovery reduces output filter stress and THD.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT with integrated diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN60N60A3	600 V/60 A, 1.85 V V_CE(on), 1.0 °C/W R_θJC, no specified short-circuit rating	Lacks validated 5 µs SC rating; higher conduction loss impacts thermal design in high-duty-cycle welders	Preferred where higher current headroom is needed and short-circuit protection is implemented externally
STMicroelectronics STGW40H65DFB	650 V/40 A, 1.6 V V_CE(on), 0.85 °C/W R_θJC, 10 µs SC rating at 125 °C	Higher voltage rating but lower current; longer SC time at lower junction temperature	Better suited for 650 V bus systems with tighter thermal constraints and less aggressive fault response timing

Compared with IXGN60N60A3 and STGW40H65DFB, IRGP6640DPBF offers the best balance of short-circuit ruggedness (5 µs @ 150 °C), low conduction loss (1.65 V), and proven diode softness for 400–480 V welding and H-bridge applications-making it optimal where reliability under transient overload is critical.

Availability

IRGP6640DPBF is available at Aetrix Electronics and suitable for welding inverters, H-bridge motor drives, and induction heating generators requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRGP6640DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in high-voltage discrete devices and system-level power solutions.

This device belongs to Infineon's legacy High-Speed IGBT portfolio-engineered specifically for industrial switching applications demanding high ruggedness, low switching loss, and integrated diode performance in hard-switched topologies.

FAQ

What is the maximum gate-emitter voltage rating for IRGP6640DPBF?

The absolute maximum continuous gate-to-emitter voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure fast, noise-immune switching and prevent Miller-induced false turn-on in high-di/dt environments.

Does IRGP6640DPBF require a negative gate voltage for reliable turn-off?

No negative gate voltage is strictly required, but applying –5 V to –10 V during turn-off significantly improves noise immunity and prevents spurious conduction in high-frequency, high-di/dt applications like welding inverters. The device is fully functional with 0 V turn-off, though system-level robustness is enhanced with negative bias.

How does the integrated diode differ from standard FRDs in this IGBT?

The integrated diode is an ultrafast soft-recovery type with 70 ns reverse recovery time and 120 µJ recovery energy at 175 °C-optimized for minimal voltage overshoot and EMI in hard-switched full-bridge circuits. Unlike standard fast recovery diodes, it exhibits controlled I_RR (21 A peak) and soft tail current decay, reducing stress on snubbers and adjacent switches.

Can IRGP6640DPBF be paralleled for higher current capacity?

Yes-its positive V_CE(on) temperature coefficient ensures inherent current sharing across paralleled units. Successful paralleling requires matched gate drive impedance, symmetrical layout, and thermal coupling. Derating to 80% of total rated current is recommended to account for parameter spread and thermal gradients.

IRGP6640DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 53 A

Current - Collector Pulsed (Icm):: 72 A

Vce(on) (Max) @ Vge, Ic:: 1.95V @ 15V, 24A

Power - Max:: 200 W

Switching Energy:: 300µJ (on), 840µJ (off)

Input Type:: Standard

Gate Charge:: 50 nC

Td (on/off) @ 25°C:: 40ns/100ns

Test Condition:: 400V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr):: 70 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRGP6640DPBF FAQ

1.How can I place an order for IRGP6640DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGP6640DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGP6640DPBF reliable?

The price and inventory of IRGP6640DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP6640DPBF is usually 5 days.

3.What payment methods are accepted for IRGP6640DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP6640DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGP6640DPBF?

IRGP6640DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGP6640DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGP6640DPBF?

For technical support, including IRGP6640DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP6640DPBF requirements.

6.How does Aetrix verify that IRGP6640DPBF is sourced from the original manufacturer or authorized distributors?

All IRGP6640DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP6640DPBF meets industry standards.

7.What is the process for return or replacement of IRGP6640DPBF?

All IRGP6640DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGP6640DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGP6640DPBF part is unused and in its original packaging.

Return procedure for IRGP6640DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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