My Inquiry
My Account
Infineon Technologies IRGP6690D-EPBF
- Part No.:
- IRGP6690D-EPBF
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
IRGP6690D-EPBF.pdf
- Description:
- IGBT 600V 90A TO247AD
- Quantity:
- Payment:
- Shipping:
Inventory:7,781
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRGP6690D-EPBF from Infineon (formerly International Rectifier) is a 600 V, 140 A (TC = 25°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery anti-parallel diode in TO-247AD package. It delivers 1.65 V typical VCE(on) at 75 A/15 VGE/25°C, 5 µs short-circuit SOA, and 175°C max junction temperature-designed for high-power welding inverters and H-bridge motor drives.
For engineers reviewing the IRGP6690D-EPBF datasheet, IRGP6690D-EPBF pinout, IRGP6690D-EPBF application, or IRGP6690D-EPBF equivalent, key selection criteria include clamped inductive load current (300 A), RθJC(IGBT) = 0.31 °C/W, diode reverse recovery time (90 ns @ 175°C), square RBSOA up to 600 V, and gate charge (140 nC) for optimized hard-switching efficiency.
Technical Context
This IGBT employs a trench-gate field-stop structure with an optimized co-packaged diode exhibiting low QRR (typ. 140 nC) and soft recovery (IRR = 26 A, trr = 90 ns). Its positive VCE(on) temperature coefficient enables stable parallel operation without current-sharing resistors.
The device supports full-bridge hard switching at 40 kHz with 241 W power dissipation at TC = 100°C and meets 5 µs short-circuit withstand capability under VCC = 400 V, VGE = 15 V, and TJ = 150°C-critical for arc stability in industrial welding systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 600 V - Withstands DC bus voltage spikes up to rated breakdown without avalanche conduction. |
| IC (TC = 100°C) | 90 A - Sustained continuous collector current at 100°C case temperature for thermal design margin. |
| VCE(on) (75 A, 15 VGE, 25°C) | 1.65 V typ. - Low conduction loss enabling >98% inverter efficiency in 40 kHz welding inverters. |
| Eoff (75 A, 400 V, 175°C) | 2.8 mJ - Measured turn-off energy under worst-case junction temperature for snubber sizing. |
| tSC SOA | 5 µs - Guaranteed short-circuit withstand time with gate drive clamping, enabling robust protection schemes. |
| RθJC (IGBT) | 0.31 °C/W - Junction-to-case thermal resistance defining heatsink interface requirements for 483 W max dissipation. |
| Qg | 140 nC - Total gate charge determining gate driver peak current (≥14 A for 10 Ω RG) and switching speed control. |
| trr (Diode) | 90 ns @ 175°C - Reverse recovery time limiting diode commutation losses and EMI in hard-switched bridges. |
Pinout & Package
IRGP6690D-EPBF uses the TO-247AD package-a 3-pin through-hole variant with isolated tab (collector connected to case), optimized for high-voltage isolation and mechanical mounting torque (1.1 N·m).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main high-side power terminal | Electrically bonded to metal tab; requires insulated mounting hardware and thermal interface material. |
| Gate (G) | Control input for IGBT channel | High-impedance MOS-controlled terminal; sensitive to ESD and requires <±20 V gate drive compliance. |
| Emitter (E) | Power return and reference node | Serves as common source for both IGBT and anti-parallel diode; critical for low-inductance emitter layout. |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast soft-recovery diode | 90 ns trr, 26 A IRR, and low Erec (210 µJ) minimize switching stress and EMI in bridge-leg commutation. |
| Square RBSOA | Rated for 300 A clamped inductive load at 600 V, supporting full-bridge operation without derating at high VCE. |
| Positive VCE(on) tempco | Enables natural current sharing in parallel configurations without external balancing resistors or active control. |
| 5 µs short-circuit SOA | Guaranteed withstand time under fault conditions allows implementation of simple, reliable overcurrent protection. |
| Lead-free & RoHS compliant | Meets environmental regulations for industrial equipment; compatible with standard Pb-free reflow and wave soldering profiles. |
Applications
| Industrial Welding Inverters | H-Bridge Motor Drives |
|---|---|
|
Use Scenario: High-frequency DC inverter for MIG/TIG welders operating at 20–40 kHz with 300–600 V DC bus. IC Role / Device Role / Timing Role: Main switching device in primary-side full-bridge topology, handling 75–140 A peak load current. Use Value: Low VCE(on) and soft diode reduce heat generation and enable compact heatsink design; 5 µs SC SOA ensures arc stability during stick-out events. |
Use Scenario: Bidirectional power stage in servo drives for CNC machines and robotics requiring regenerative braking. IC Role / Device Role / Timing Role: High-side/low-side switch in dual half-bridge configuration controlling 3-phase motor phase currents. Use Value: Square RBSOA and 175°C junction rating support high peak torque bursts; low Qg enables fast PWM response (<100 ns dead-time). |
| Induction Heating Systems | UPS Power Stages |
|
Use Scenario: Resonant inverter stage in medium-frequency (10–50 kHz) induction cooktops and metal heating units. IC Role / Device Role / Timing Role: Half-bridge switch managing 10–30 kW output with zero-voltage switching assistance. Use Value: Optimized diode reverse recovery minimizes body-diode conduction loss during ZVS transitions; 0.31 °C/W RθJC sustains high duty-cycle operation. |
Use Scenario: Online double-conversion UPS with 10–20 kVA capacity and battery backup for data centers. IC Role / Device Role / Timing Role: Inverter-stage IGBT in three-phase full-bridge delivering clean 50/60 Hz sine-wave output. Use Value: High ILM (300 A) handles surge loads during generator transfer; rugged 175°C operation ensures reliability under sustained overload. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT with integrated diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN120N60B3 | 600 V / 120 A, 2.1 V VCE(on), 120 nC Qg, no specified tSC SOA | Lacks documented 5 µs short-circuit rating; higher conduction loss reduces efficiency in high-duty-cycle welding. | Prefer where lower gate drive complexity is prioritized over fault robustness. |
| STMicroelectronics STGW40H65DFB | 650 V / 40 A, 1.75 V VCE(on), 100 nC Qg, 150°C max TJ | Lower current rating and junction temperature limit restrict use to <5 kW systems; unsuitable for 140 A welding loads. | Select only for space-constrained 650 V designs where thermal headroom is abundant. |
Compared with IXGN120N60B3 and STGW40H65DFB, IRGP6690D-EPBF uniquely combines 140 A current capability, 5 µs SC SOA, and 175°C operation-making it the only option validated for high-reliability, high-current industrial welding and H-bridge motor drives demanding full thermal and fault margin.
Availability
IRGP6690D-EPBF is available at Aetrix Electronics and suitable for industrial welding inverters, H-bridge motor drives, and induction heating systems requiring stable component supply across multi-year production cycles.
Supply support for IRGP6690D-EPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in high-voltage discrete devices.
This part belongs to Infineon's legacy High-Speed IGBT portfolio-engineered specifically for high-efficiency, high-reliability industrial power conversion where ruggedness, thermal performance, and soft switching behavior are critical.
FAQ
What is the maximum gate-emitter voltage rating for IRGP6690D-EPBF?
The absolute maximum continuous gate-to-emitter voltage is ±20 V. Exceeding this rating risks permanent gate oxide damage. Gate drive circuits must clamp transient overshoot using TVS diodes or zener clamps, especially during fast switching with high di/dt in high-inductance layouts.
Does IRGP6690D-EPBF require a negative gate voltage for turn-off?
No. The device is fully controllable with 0 V to +15 V gate drive; -5 V to -10 V is not required. However, applying -5 V during off-state improves noise immunity and reduces Miller-induced false turn-on in high-dV/dt environments such as multi-level inverters.
How does the TO-247AD package differ from TO-247AC in IRGP6690D-EPBF?
TO-247AD features an electrically isolated collector tab (no internal connection between collector and mounting surface), unlike TO-247AC where the collector is tied to the tab. This enables direct heatsink mounting without insulating washers in floating topologies like three-phase bridges.
Can IRGP6690D-EPBF be paralleled for higher current capacity?
Yes-its positive VCE(on) temperature coefficient ensures inherent current sharing. Successful parallel operation requires matched gate drive impedance, symmetrical PCB layout, and identical thermal mounting to avoid thermal runaway; empirical testing at full load is recommended before production deployment.
IRGP6690D-EPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 140 A
- Current - Collector Pulsed (Icm):
- 225 A
- Vce(on) (Max) @ Vge, Ic:
- 1.95V @ 15V, 75A
- Power - Max:
- 483 W
- Switching Energy:
- 2.4mJ (on), 2.2mJ (off)
- Input Type:
- Standard
- Gate Charge:
- 140 nC
- Td (on/off) @ 25°C:
- 85ns/222ns
- Test Condition:
- 400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr):
- 90 ns
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AD
IRGP6690D-EPBF FAQ
1.How can I place an order for IRGP6690D-EPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRGP6690D-EPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRGP6690D-EPBF reliable?
The price and inventory of IRGP6690D-EPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP6690D-EPBF is usually 5 days.
3.What payment methods are accepted for IRGP6690D-EPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP6690D-EPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRGP6690D-EPBF?
IRGP6690D-EPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRGP6690D-EPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRGP6690D-EPBF?
For technical support, including IRGP6690D-EPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP6690D-EPBF requirements.
6.How does Aetrix verify that IRGP6690D-EPBF is sourced from the original manufacturer or authorized distributors?
All IRGP6690D-EPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP6690D-EPBF meets industry standards.
7.What is the process for return or replacement of IRGP6690D-EPBF?
All IRGP6690D-EPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGP6690D-EPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRGP6690D-EPBF part is unused and in its original packaging.
Return procedure for IRGP6690D-EPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRGP6690D-EPBF Tags
;;2.jpg)
-
STGD3NB60SDT4
STMicroelectronics
-
HGTD1N120BNS9A
onsemi
-
STGF7NB60SL
STMicroelectronics
-
FGD5T120SH
onsemi
-
STGB3NC120HDT4
STMicroelectronics
-
IKP20N60TXKSA1
Infineon Technologies
-
STGW30H60DFB
STMicroelectronics
-
STGB30M65DF2
STMicroelectronics
-
IKB20N60TATMA1
Infineon Technologies
-
STGB30V60DF
STMicroelectronics
-
IKW30N60DTPXKSA1
Infineon Technologies
-
ISL9V3040P3
onsemi
Tech Hub
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
