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Infineon Technologies IRGP6690DPBF
- Part No.:
- IRGP6690DPBF
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
IRGP6690DPBF.pdf
- Description:
- IGBT 600V 140A 483W TO247AC
- Quantity:
- Payment:
- Shipping:
Inventory:9,585
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Product details
Overview
IRGP6690DPBF from Infineon Technologies (formerly International Rectifier) is a 600 V, 140 A (TC = 25°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery anti-parallel diode in TO-247AC package. It delivers 1.65 V typical VCE(on) at 75 A/15 VGE/25°C, 5 µs short-circuit SOA, and 175°C maximum junction temperature - engineered for high-power welding inverters and H-bridge motor drives.
For engineers reviewing the IRGP6690DPBF datasheet, IRGP6690DPBF pinout, IRGP6690DPBF application, or IRGP6690DPBF equivalent, key selection criteria include its square RBSOA at 175°C, clamped inductive load rating of 300 A, and diode reverse recovery energy of 210 µJ at TJ = 175°C - critical for hard-switched full-bridge topologies requiring ruggedness and thermal margin.
Technical Context
This IGBT employs a field-stop trench-gate structure optimized for low conduction loss and controlled tail current decay. Its integrated diode features soft recovery with 90 ns trr and 26 A peak reverse recovery current under 400 V, 18 A, 15 VGE, 10 Ω gate drive conditions at 175°C.
The device supports robust parallel operation via positive VCE(on) temperature coefficient (−19 mV/°C threshold shift) and maintains stable switching performance across −40°C to +175°C junction range. Its 0.31 °C/W RθJC (IGBT) and 2.10 °C/W RθJC (diode) enable high-power density thermal design in forced-air or liquid-cooled welder modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 600 V - Withstands DC bus voltage up to 600 V in industrial welders and UPS systems without breakdown. |
| IC (TC = 100°C) | 90 A - Sustains continuous 90 A collector current at 100°C case temperature, enabling compact heatsink sizing. |
| VCE(on) (75 A, 25°C) | 1.65 V typ. - Low saturation voltage reduces conduction loss to ~124 W at 75 A, improving system efficiency. |
| Etotal (75 A, 175°C) | 5.9 mJ - Total switching energy per cycle at elevated temperature enables 40 kHz operation in high-frequency inverters. |
| tSC SOA | 5 µs - Guaranteed short-circuit withstand time at VCC = 400 V and TJ = 150°C supports reliable overcurrent protection schemes. |
| RθJC (IGBT) | 0.31 °C/W - Enables direct mounting to heatsinks with minimal thermal interface resistance for high-power density designs. |
| Qg | 140 nC - Gate charge value determines required gate driver peak current (≥14 A for 10 ns rise time), guiding driver selection. |
Pinout & Package
IRGP6690DPBF uses the industry-standard TO-247AC package with three terminals: Collector (C), Gate (G), and Emitter (E). The package features isolated mounting hole, flat metal tab for thermal interface, and lead-free RoHS-compliant finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main high-side power terminal | Connects to DC bus positive; carries full load current and must be routed with low-inductance layout for EMI control. |
| Gate (G) | Control input for IGBT channel | Requires low-impedance gate driver (≤10 Ω series resistance) to achieve specified 85 ns td(on) and minimize Miller-induced turn-on risk. |
| Emitter (E) | Power return and reference node | Serves as common source for both IGBT and anti-parallel diode; must be tied to low-inductance emitter PCB plane to stabilize switching waveforms. |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast soft-recovery diode | 90 ns trr and 210 µJ Erec at 175°C reduce voltage overshoot and EMI in hard-switched H-bridges. |
| Square RBSOA at 175°C | Supports 300 A clamped inductive load at VCC = 480 V, enabling robust operation during transient overloads in welders. |
| Positive VCE(on) tempco | Enables stable current sharing in parallel configurations without external current-balancing resistors. |
| 5 µs short-circuit SOA | Allows implementation of fast-acting desaturation detection circuits with ≥2 µs response margin before thermal runaway. |
| Lead-free & RoHS compliant | Meets IPC-J-STD-020D reflow profile requirements for Pb-free assembly, supporting modern manufacturing standards. |
Applications
| Welding Inverter Power Stage | H-Bridge Motor Drive |
|---|---|
Use Scenario: High-duty-cycle arc welding with 30–100 kHz PWM switching and repetitive 300 A inductive load transients. IC Role / Device Role / Timing Role: Main switching element in primary-side inverter bridge, handling DC bus inversion into transformer primary. Use Value: 175°C junction rating and 5 µs SC SOA ensure uninterrupted operation during stick-welding short circuits and arc re-ignition surges. |
Use Scenario: Industrial servo drive delivering 75 A RMS output to 400 V AC induction motors with regenerative braking. IC Role / Device Role / Timing Role: High-side and low-side switch in complementary half-bridge legs, synchronized with dead-time control. Use Value: Ultrafast diode (90 ns trr) minimizes commutation losses during regenerative energy feedback, reducing heatsink size by ~22% vs. standard diodes. |
| Induction Heating Generator | Uninterruptible Power Supply (UPS) |
Use Scenario: 20–50 kW resonant tank inverter operating at 20–100 kHz with high di/dt (>1 kA/µs) during zero-voltage switching transitions. IC Role / Device Role / Timing Role: Half-bridge switch controlling resonant current flow through LC tank; diode conducts reverse recovery current during ZVS turn-on. Use Value: Soft recovery diode limits dv/dt stress on gate oxide and reduces snubber losses, extending reliability beyond 100,000 operating hours. |
Use Scenario: Online double-conversion UPS delivering clean 60 Hz sine wave with <1% THD under nonlinear loads and battery backup mode. IC Role / Device Role / Timing Role: Inverter-stage switch converting DC link voltage to regulated AC output; handles bidirectional power flow during battery charging/discharging. Use Value: Square RBSOA ensures safe operation during line-sag events causing momentary overload, preventing catastrophic failure during grid transition. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-power IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN60N60C3 | 600 V / 60 A rated; lower current capacity but higher VCE(on) (2.2 V typ.) and slower switching (Eoff = 4.1 mJ @ 75 A). | More suitable for lower-current, cost-sensitive UPS inverters where thermal margin > switching speed. | Select when system current demand ≤ 60 A and gate drive capability is limited to ≤10 A peak. |
| STMicroelectronics STGW40H65DFB | 650 V / 40 A; includes built-in NTC thermistor and faster diode (trr = 65 ns), but lower IC (40 A @ 100°C) and higher RθJC (0.45 °C/W). | Better suited for space-constrained PFC stages or auxiliary converters where sensing integration outweighs power density needs. | Prefer for designs requiring on-module temperature monitoring or where diode recovery speed is prioritized over current rating. |
Compared with IXGN60N60C3 and STGW40H65DFB, IRGP6690DPBF provides the highest continuous current (90 A @ 100°C) and lowest conduction loss in its voltage class, making it optimal for high-power welding and industrial motor drives where thermal headroom and efficiency are critical.
Availability
IRGP6690DPBF is available at Aetrix Electronics and suitable for welding inverters, H-bridge motor drives, and induction heating generators requiring stable component supply across multi-year production cycles.
Supply support for IRGP6690DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors for industrial and automotive applications.
This device belongs to the PrimePACK™-compatible high-current IGBT family designed specifically for ruggedized industrial inverters demanding high short-circuit robustness and extended thermal operation.
FAQ
What is the maximum gate-emitter voltage rating for IRGP6690DPBF?
The absolute maximum continuous gate-to-emitter voltage is ±20 V. Exceeding this rating risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and −5 V to −10 V for turn-off to ensure noise immunity and prevent spurious conduction during high di/dt events.
Does IRGP6690DPBF require an external freewheeling diode?
No - it integrates an ultrafast soft-recovery anti-parallel diode rated for 45 A repetitive peak forward current and 300 A clamped inductive load current. This eliminates need for discrete diodes in standard H-bridge configurations, reducing board area and parasitic inductance.
How does the 5 µs short-circuit SOA translate to practical protection design?
The 5 µs rating applies at VCC = 400 V and TJ = 150°C with gate drive transitioning from +15 V to 0 V. Protection circuits must detect desaturation and disable gate drive within ≤3 µs to maintain safe junction temperature, requiring sub-100 ns propagation delay in comparator-based desat blocks.
Can IRGP6690DPBF be paralleled for higher current capacity?
Yes - its positive VCE(on) temperature coefficient and matched dynamic characteristics enable stable current sharing. Use identical gate drive traces, Kelvin emitter connections, and symmetrical thermal mounting. Derate total current by 15% versus sum of individual ratings to account for layout mismatches.
IRGP6690DPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 140 A
- Current - Collector Pulsed (Icm):
- 225 A
- Vce(on) (Max) @ Vge, Ic:
- 1.95V @ 15V, 75A
- Power - Max:
- 483 W
- Switching Energy:
- 3.1mJ (on), 2.8mJ (off)
- Input Type:
- Standard
- Gate Charge:
- 140 nC
- Td (on/off) @ 25°C:
- 85ns/222ns
- Test Condition:
- 400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr):
- 90 ns
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
IRGP6690DPBF FAQ
1.How can I place an order for IRGP6690DPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRGP6690DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRGP6690DPBF reliable?
The price and inventory of IRGP6690DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGP6690DPBF is usually 5 days.
3.What payment methods are accepted for IRGP6690DPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGP6690DPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRGP6690DPBF?
IRGP6690DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRGP6690DPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRGP6690DPBF?
For technical support, including IRGP6690DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGP6690DPBF requirements.
6.How does Aetrix verify that IRGP6690DPBF is sourced from the original manufacturer or authorized distributors?
All IRGP6690DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGP6690DPBF meets industry standards.
7.What is the process for return or replacement of IRGP6690DPBF?
All IRGP6690DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGP6690DPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRGP6690DPBF part is unused and in its original packaging.
Return procedure for IRGP6690DPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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