Infineon Technologies IRGPC30FD2

Overview

IRGPC30FD2 from Infineon Technologies is a co-packaged n-channel IGBT with integrated ultrafast soft-recovery HEXFRED™ diode in TO-247AC package, rated for 600 V V_CES, 31 A continuous collector current at T_C = 25°C, and 2.1 V V_CE(sat) @ 15 V V_GE, 17 A - optimized for 1–10 kHz motor control, UPS, and industrial power supplies.

For engineers reviewing the IRGPC30FD2 datasheet, IRGPC30FD2 pinout, IRGPC30FD2 application, or IRGPC30FD2 equivalent, key selection criteria include total switching loss (3.0–4.6 mJ), diode reverse recovery time (42–120 ns), junction-to-case thermal resistance (1.2 °C/W IGBT / 2.5 °C/W diode), and gate charge (27–30 nC) under 400 V bus conditions.

Technical Context

This device integrates a planar-gate IGBT and a soft-recovery diode in a single TO-247AC thermally optimized package, enabling reduced layout parasitics and simplified thermal management in high-current half-bridge configurations. Its gate threshold voltage (3.0–5.5 V) and negative temperature coefficient of V_GE(th) (−11 mV/°C) support stable parallel operation across temperature.

Switching behavior is characterized by low tail current and controlled diode reverse recovery: trr = 42–120 ns, Qrr = 80–600 nC, and di(rec)M/dt up to 180 A/µs at 25°C - critical for minimizing voltage overshoot and EMI in hard-switched inverters.

Key Specifications

Pinout & Package

TO-247AC package with isolated mounting base; three-terminal configuration: Collector (tab), Gate (pin 1), Emitter (pin 2). Thermal path optimized via direct copper die attach to metal tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT + integrated diode applications.

Compared with IXGN30N60B3 and STGP30NC60WD, IRGPC30FD2 offers the lowest total switching loss (3.0 mJ min) at 10 kHz and best thermal resistance (1.2 °C/W), making it optimal for space-constrained industrial inverters prioritizing efficiency over ultra-low EMI.

Availability

IRGPC30FD2 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, welding equipment, and induction heating generators requiring stable component supply and long-term production continuity.

Supply support for IRGPC30FD2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, with global manufacturing and R&D centers.

This device belongs to Infineon's legacy "Fast CoPack" IGBT family, designed specifically for cost-sensitive, medium-frequency industrial inverters where integration, thermal performance, and soft switching reliability are prioritized over ultra-high-speed operation.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies td(off) and tf increase significantly above RG = 23 Ω, with Eoff rising to 2.1 mJ at 23 Ω and exceeding 3.5 mJ at 100 Ω. For 480 V, 17 A operation, RG ≤ 33 Ω maintains Eoff <2.5 mJ and ensures safe SOA compliance per Fig. 12. Higher values risk overvoltage during inductive turn-off.

Can IRGPC30FD2 be used in parallel configurations?

Yes - its negative V_GE(th) temperature coefficient (−11 mV/°C) and flat output characteristics (Fig. 2, 5) enable current sharing across multiple devices. Design requires matched gate drive impedance, symmetrical layout, and individual emitter resistors (0.1 Ω) to balance dynamic current distribution during switching transitions.

Is the integrated diode suitable for synchronous rectification?

No - the HEXFRED™ diode is optimized for freewheeling and clamping, not unidirectional forward conduction. Its V_F = 1.4–1.7 V at 12 A is higher than Schottky or MOSFET synchronous rectifiers, and its reverse recovery behavior is not tailored for ZVS/ZCS synchronous topologies requiring near-zero Qrr.

What is the minimum gate drive voltage required for full saturation?

V_GE(th) ranges from 3.0 to 5.5 V, but full saturation (V_CE(sat) ≤2.1 V) requires V_GE ≥15 V per Fig. 2 and Table. At 12 V, V_CE(sat) rises to ~2.6 V at 17 A, increasing conduction loss by 30%. 15 V ±10% is the validated drive level for rated performance.