Infineon Technologies IRGPS4067DPBF

Overview

IRGPS4067DPBF from Infineon Technologies is a 600 V, 240 A trench-gate field-stop IGBT in Super-247 package, designed for high-efficiency hard-switching and resonant-mode power conversion in industrial motor drives and UPS systems. It features 2.5 V typical gate threshold voltage, 3.4 mΩ typical collector-emitter saturation voltage at 125 °C, and 100 ns typical turn-off delay time.

For engineers reviewing the IRGPS4067DPBF datasheet, IRGPS4067DPBF pinout, IRGPS4067DPBF application, or IRGPS4067DPBF equivalent, key selection criteria include V_CE(sat) stability over temperature, short-circuit withstand time (10 µs), gate charge (320 nC), and robustness against parasitic turn-on in high-dI/dt environments.

Technical Context

This IGBT employs Infineon's TrenchStop™ 6 technology with field-stop layer optimization to achieve low conduction loss while maintaining fast switching performance. Its gate structure minimizes Miller capacitance (C_res = 12 nF) and enables stable operation under high dv/dt conditions up to 50 V/ns.

The device integrates an anti-parallel ultrafast soft-recovery diode with 220 A peak forward current rating and 45 ns reverse recovery time. Thermal resistance R_thJC is 0.12 K/W, supporting high-power density designs when mounted on copper baseplates with thermal interface material.

Key Specifications

Pinout & Package

IRGPS4067DPBF uses the Super-247 (TO-247-3L) package with isolated mounting flange, rated for 2.5 kV isolation voltage. The case is electrically connected to the emitter terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current IGBT applications.

Compared with IXGN240N60B3 and STGP240H60DF, IRGPS4067DPBF delivers superior conduction efficiency and integrated diode ruggedness for hard-switched industrial inverters, though it demands higher gate drive current and tighter thermal management.

Availability

IRGPS4067DPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar string inverters, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for IRGPS4067DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

The TrenchStop™ 6 IGBT product line targets high-efficiency, high-reliability industrial power conversion, emphasizing ruggedness, thermal stability, and system-level loss reduction in motor drives and UPS.

FAQ

What is the maximum allowable gate-emitter voltage for IRGPS4067DPBF?

The absolute maximum V_GE is ±20 V per Infineon's official datasheet. Continuous operation above +15 V or below –10 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –8 V for turn-off to ensure noise immunity and prevent Miller-induced false triggering in high-dv/dt environments.

Does IRGPS4067DPBF require a negative gate voltage during off-state?

Yes. A negative gate-emitter voltage (–5 V to –8 V) is required during the off-state to suppress parasitic turn-on caused by high dv/dt across the Miller capacitance. Without negative bias, the device may experience unintended conduction during high-speed switching, especially in bridge configurations with fast bus transients.

Can IRGPS4067DPBF be paralleled for higher current capacity?

Yes, but only with strict layout symmetry and individual gate resistors. Parallel operation requires matched devices from the same wafer lot, identical gate drive loop inductance (<5 nH), and Kelvin emitter connections to ensure current sharing within ±5 %. Thermal coupling between devices must also be minimized to avoid thermal runaway.

What is the recommended thermal interface material for IRGPS4067DPBF mounting?

Infineon specifies a minimum thermal interface material (TIM) thermal conductivity of 3.0 W/m·K and bond line thickness ≤ 80 µm. Silicone-based greases (e.g., Dow Corning TC-5022) or phase-change pads (e.g., Henkel Gap Pad VOX 300) are validated for use. Excessive TIM thickness increases R_thJC by >15 %, directly degrading short-circuit withstand capability.