Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRGPS46160DPBF

Part No.:
IRGPS46160DPBF
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-274AA
Datasheet:
AetrixIRGPS46160DPBF.pdf
Description:
IGBT 600V 240A SUPER247
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,263

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRGPS46160DPBF from Infineon is a 600 V, 160 A (TC = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery anti-parallel diode in Super-247 package. It delivers VCE(on) = 1.70 V @ 120 A, 5 µs short-circuit SOA, and RthJC(IGBT) = 0.20 °C/W - enabling high-efficiency, rugged operation in industrial motor drives and UPS inverters.

For engineers reviewing the IRGPS46160DPBF datasheet, IRGPS46160DPBF pinout, IRGPS46160DPBF application, or IRGPS46160DPBF equivalent, key selection criteria include its square RBSOA at 175°C junction temperature, positive VCE(on) temperature coefficient for stable parallel operation, and low Erec = 500 µJ diode recovery energy under 175°C conditions.

Technical Context

This IGBT uses a trench-gate field-stop structure optimized for hard-switching applications up to 20 kHz. Its integrated diode features soft reverse recovery (trr = 130 ns, IRR = 36 A) and low QRR, minimizing voltage overshoot and EMI in inverter leg configurations.

The device supports gate drive voltages from ±20 V, with VGE(th) = 4.0–6.5 V and dVGE(th)/dTJ = −17 mV/°C. Its full-square RBSOA (up to 600 V, 480 A) and 5 µs SCSOA are validated at VGE = +15 V to 0 V with RG = 4.7 Ω, enabling robust protection in fault conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VCES600 V - Withstands DC bus voltages up to 480 V in 3-phase inverters with 20% margin.
IC @ TC = 100°C160 A - Continuous current rating at heatsink interface temperature, defining thermal design envelope.
VCE(on)1.70 V typ. @ 120 A - Directly determines conduction loss (Pcond ≈ 204 W) and heatsink sizing.
tSC≥5 µs - Enables reliable desaturation detection and gate-drive shutdown before thermal runaway.
RthJC(IGBT)0.20 °C/W - Sets minimum thermal resistance between die and heatsink for 375 W dissipation at TC = 100°C.
Eoff4390 µJ @ TJ = 175°C - Critical for snubberless hard-switching loss budget at elevated temperature.
Qg240 nC - Determines gate driver peak current requirement (IPK ≥ 50 A for 5 ns rise time).

Pinout & Package

IRGPS46160DPBF is housed in the Super-247 (TO-247-3L) package: isolated mounting base, single-plane leadframe, and 25-unit tube packaging. Thermal path is optimized via direct copper baseplate contact.

Pin/TerminalCircuit RoleDesign Meaning
GGateControls IGBT turn-on/turn-off; requires ±20 V absolute max rating and 240 nC total charge.
CCollectorMain high-side power terminal; connects to DC+ bus in inverter half-bridge configuration.
EEmitterCommon emitter node shared with anti-parallel diode cathode; referenced to power ground.

Key Features

FeatureDesign Value
Square RBSOA up to 600 VEnables safe operation at full VCE and high IC without secondary breakdown, critical for regenerative braking in motor drives.
Positive VCE(on) tempcoEnsures inherent current sharing when paralleling multiple devices without external ballasting resistors.
Ultrafast soft-recovery diodeDelivers trr = 130 ns and softness factor >1.5, reducing voltage spikes and EMI during freewheeling commutation.
5 µs short-circuit SOASupports implementation of fast-acting overcurrent protection using desaturation sensing and <5 µs gate turn-off.
Lead-free, RoHS-compliantMeets environmental compliance requirements for industrial equipment sold in EU, China, and North America.

Applications

Industrial Motor DriveInverter Systems

Use Scenario: Three-phase 400 V AC variable-frequency drive controlling 75 kW induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: High-side switch in 1200 V-class inverter leg, operating at 8–16 kHz PWM with 50% duty cycle.

Use Value: Low VCE(on) and soft diode reduce system losses by 12% vs. legacy 650 V IGBTs, improving efficiency from 96.1% to 97.3% at full load.

Use Scenario: Uninterruptible power supply (UPS) output stage delivering clean 230 V sine wave under dynamic load steps.

IC Role / Device Role / Timing Role: Bidirectional switching element in H-bridge topology, handling both forward conduction and reverse recovery during zero-crossing transitions.

Use Value: 5 µs SCSOA and square RBSOA allow reliable operation during grid-synchronization faults without derating.

Welding EquipmentRenewable Energy Inverters

Use Scenario: IGBT-based inverter for 300 A DC arc welding with rapid current slew rates (>500 A/ms) and frequent short-circuit events.

IC Role / Device Role / Timing Role: Primary switching device in primary-side DC-DC converter, subjected to repetitive 5–10 ms short circuits during arc ignition.

Use Value: Confirmed 5 µs short-circuit withstand capability enables elimination of crowbar circuits, reducing BOM count and failure points.

Use Scenario: Central string inverter converting 1000 V PV array output to 400 V AC grid interface with 98.5% peak efficiency.

IC Role / Device Role / Timing Role: Main switching device in NPC (neutral-point-clamped) topology, requiring precise VCE balancing and low Erec.

Use Value: Erec = 500 µJ and soft diode reduce diode-related switching loss by 38% compared to standard FRD-equipped IGBTs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXYS IXGN160N60B3600 V, 160 A; VCE(on) = 1.85 V @ 120 A; tSC = 10 µs; TO-247-3L package.Higher VCE(on) increases conduction loss by ~8.8 W at 120 A; longer SCSOA allows slower protection response.Select when higher short-circuit margin is prioritized over conduction efficiency.
STMicroelectronics STGW15H60DF600 V, 15 A (not 160 A); co-packaged diode with trr = 150 ns; TO-247-3L.Rated for only 15 A continuous - not a current-scalable alternative; suitable only for low-power auxiliary stages.Not recommended as functional replacement; use only in non-current-critical auxiliary functions.

Compared with IXGN160N60B3 and STGW15H60DF, IRGPS46160DPBF offers the lowest conduction loss and optimal balance of short-circuit ruggedness and diode softness for 100–200 kW industrial inverters, while the alternatives trade off either efficiency or scalability.

Availability

IRGPS46160DPBF is available at Aetrix Electronics and suitable for industrial motor drives, UPS systems, and welding equipment requiring stable component supply across multi-year production cycles and extended temperature operation.

Supply support for IRGPS46160DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's PrimePACK™-compatible high-current IGBT portfolio, designed specifically for rugged, high-efficiency switching in 3-phase motor drives and medium-power inverters operating up to 175°C junction temperature.

FAQ

What is the maximum gate-emitter voltage rating for IRGPS46160DPBF?

The absolute maximum continuous gate-to-emitter voltage is ±20 V, with transient rating up to ±30 V for ≤1 µs pulses. Exceeding ±20 V continuously risks oxide degradation and threshold shift; gate drive circuits must include clamping diodes or Zener regulation to maintain reliability over 10-year field life.

Can IRGPS46160DPBF be paralleled for higher current capacity?

Yes - its positive VCE(on) temperature coefficient ensures natural current sharing across devices. Parallel operation requires matched gate drive impedance (≤±5% RG tolerance), symmetrical PCB layout, and individual emitter degeneration resistors (0.01 Ω) to suppress oscillation during turn-on transients.

What thermal interface material is recommended for the Super-247 package?

A phase-change thermal pad (e.g., Laird TPCM 600 series) or silicone-based grease (e.g., Dow Corning TC-5622) with 0.2–0.3 mm bond line thickness is recommended. Achieving RthCS ≤ 0.24 °C/W requires surface flatness <25 µm and mounting torque of 1.1 N·m on M3 screws to ensure uniform pressure distribution.

Does the integrated diode support synchronous rectification in bidirectional topologies?

No - the diode is optimized for freewheeling and reverse recovery, not active control. Its VF = 2.4 V at 120 A and lack of gate control prevent use as a synchronous rectifier; external MOSFETs or dedicated SiC Schottky diodes are required for true bidirectional conduction control.

IRGPS46160DPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-274AA
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
240 A
Current - Collector Pulsed (Icm):
360 A
Vce(on) (Max) @ Vge, Ic:
2.05V @ 15V, 120A
Power - Max:
750 W
Switching Energy:
5.75mJ (on), 3.43mJ (off)
Input Type:
Standard
Gate Charge:
240 nC
Td (on/off) @ 25°C:
80ns/190ns
Test Condition:
400V, 120A, 4.7Ohm, 15V
Reverse Recovery Time (trr):
130 ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
SUPER-247™ (TO-274AA)

IRGPS46160DPBF FAQ

1.How can I place an order for IRGPS46160DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGPS46160DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGPS46160DPBF reliable?

The price and inventory of IRGPS46160DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGPS46160DPBF is usually 5 days.

3.What payment methods are accepted for IRGPS46160DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGPS46160DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGPS46160DPBF?

IRGPS46160DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGPS46160DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGPS46160DPBF?

For technical support, including IRGPS46160DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGPS46160DPBF requirements.

6.How does Aetrix verify that IRGPS46160DPBF is sourced from the original manufacturer or authorized distributors?

All IRGPS46160DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGPS46160DPBF meets industry standards.

7.What is the process for return or replacement of IRGPS46160DPBF?

All IRGPS46160DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGPS46160DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGPS46160DPBF part is unused and in its original packaging.

Return procedure for IRGPS46160DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRGPS46160DPBF Tags

  • IRGPS46160DPBF
  • IRGPS46160DPBF PDF
  • IRGPS46160DPBF Datasheet
  • IRGPS46160DPBF Specifications
  • IRGPS46160DPBF Images
  • Infineon Technologies
  • Infineon Technologies IRGPS46160DPBF
  • Buy IRGPS46160DPBF
  • IRGPS46160DPBF Price
  • IRGPS46160DPBF Distributor
  • IRGPS46160DPBF Supplier
  • IRGPS46160DPBF Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER