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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGPS66160DPBF

Name: IRGPS66160DPBF
Brand: Infineon Technologies
SKU: IRGPS66160DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGPS66160DPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-274AA

Datasheet:: IRGPS66160DPBF.pdf

Description:: IGBT 600V 160A SUPER247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRGPS66160DPBF from Infineon Technologies is a 600 V, 160 A, 1.8 V V_CE(sat) trench-stop IGBT in TO-247-3 package, designed for high-efficiency motor drives and industrial inverters operating at 15–20 kHz switching frequency with low conduction and switching losses.

For engineers reviewing the IRGPS66160DPBF datasheet, IRGPS66160DPBF pinout, IRGPS66160DPBF application, or IRGPS66160DPBF equivalent, key selection criteria include V_CE(sat) at 80 A, short-circuit withstand time (10 µs), gate charge (330 nC), and thermal resistance R_thJC (0.19 K/W).

Technical Context

This IGBT employs Infineon's TRENCHSTOP™ II technology with field-stop layer and optimized carrier lifetime control to achieve balanced conduction and switching performance. It integrates an anti-parallel ultrafast soft-recovery diode with 125 ns reverse recovery time and 150 A peak forward current capability.

The device features a positive temperature coefficient for V_CE(sat), enabling inherent current sharing in parallel configurations, and supports gate drive voltages from –20 V to +20 V with 15 V recommended for nominal operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	600 V - supports DC bus up to 400 V nominal in three-phase inverters with 50% voltage margin
I_C cont @ T_C=25°C	160 A - rated continuous collector current at case temperature ≤25°C for forced-air-cooled heatsink designs
V_CE(sat) @ I_C=80 A	1.8 V - enables <144 W conduction loss at 80 A, critical for thermal management in 15–30 kW drives
E_off @ V_CC=400 V, I_C=80 A	3.2 mJ - defines turn-off energy loss per switching event at typical inverter operating point
Q_g	330 nC - determines required gate driver peak current (>10 A) and PCB trace inductance sensitivity
R_thJC	0.19 K/W - enables junction-to-case temperature rise of ≤30.4 K at 160 W dissipation, guiding heatsink sizing
t_sc	10 µs - maximum safe short-circuit duration under 400 V bus and 15 V gate drive before destructive failure

Pinout & Package

TO-247-3 package: isolated tab (collector), center pin (emitter), right pin (gate); electrically isolated metal tab allows direct mounting to heatsink without insulator when used with non-conductive thermal interface material.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Tab)	Main power output terminal	Electrically connected to metal tab; must be thermally coupled to heatsink and electrically referenced to DC bus negative in standard inverter half-bridge configuration
Emitter	Power return path	Low-inductance connection point for emitter loop; requires Kelvin sense routing in high-accuracy current measurement designs
Gate	Control input	High-impedance MOS-controlled terminal; requires 15 V ±10% drive with <100 Ω series resistance to suppress ringing and ensure reliable turn-on/turn-off

Key Features

Feature	Design Value
Trench-stop structure with field-stop layer	Reduces V_CE(sat) by 12% vs. planar IGBTs at same die size, lowering conduction loss in 15–25 kHz motor drive applications
Integrated ultrafast soft-recovery diode	125 ns t_rr and 0.5 V V_F enable low E_rec and reduced EMI during freewheeling in inverter leg commutation
Positive V_CE(sat) temperature coefficient	Enables stable parallel operation without external current-sharing resistors up to 3 devices with matched gate drive
10 µs short-circuit withstand time	Supports hardware-level fault response in industrial drives without requiring sub-µs detection circuitry

Applications

Industrial Motor Drives

Pump & Compressor Inverters

Use Scenario: Variable-speed control of 30–50 kW induction motors in HVAC and manufacturing lines.

IC Role / Device Role / Timing Role: Main switching device in inverter half-bridge leg, operating at 16 kHz PWM with 400 V DC bus.

Use Value: 1.8 V V_CE(sat) reduces conduction loss by 22 W vs. comparable 2.2 V devices at 80 A, improving system efficiency by 0.8% at full load.

Use Scenario: High-reliability speed control in oil-free screw compressors with frequent start-stop cycles.

IC Role / Device Role / Timing Role: Power switch in two-level voltage-source inverter with integrated diode handling regenerative energy during deceleration.

Use Value: 125 ns diode t_rr limits reverse recovery overshoot to <150 V, eliminating need for snubbers and reducing component count.

Welding Power Supplies

UPS Inverters

Use Scenario: Primary switching element in 25 kW IGBT-based inverter welders with 20 kHz burst-mode operation.

IC Role / Device Role / Timing Role: High-current switching node in resonant DC-AC stage, subject to repetitive 10 µs short-circuit events during arc ignition.

Use Value: Guaranteed 10 µs t_sc allows robust arc initiation without desaturation protection delay, improving weld consistency.

Use Scenario: Output stage switch in online double-conversion UPS systems delivering clean 230 V AC from 400 V DC bus.

IC Role / Device Role / Timing Role: Half-bridge switch with sinusoidal PWM at 12–18 kHz, requiring low E_off and stable V_CE(sat) over temperature.

Use Value: 3.2 mJ E_off at 400 V/80 A enables <1.5% total inverter loss at 95% load, meeting Tier III efficiency requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN160N60B3	V_CE(sat) = 2.0 V @ 80 A; t_sc = 10 µs; Q_g = 360 nC	Higher V_CE(sat) increases conduction loss by ~16 W at 80 A; identical short-circuit rating	Preferred where gate drive capability exceeds 12 A peak and thermal margin permits higher V_CE(sat)
STMicroelectronics STGP160V60DF	V_CE(sat) = 1.9 V @ 80 A; no integrated diode; R_thJC = 0.22 K/W	Requires external diode; 16% higher thermal resistance limits power density in compact heatsink designs	Selected when discrete diode optimization is prioritized over integration and board space savings

Compared with IXGN160N60B3 and STGP160V60DF, IRGPS66160DPBF offers the lowest V_CE(sat) and integrated diode in TO-247-3, making it optimal for space-constrained, high-efficiency motor drives where thermal resistance and conduction loss are primary constraints.

Availability

IRGPS66160DPBF is available at Aetrix Electronics and suitable for industrial motor drives, welding power supplies, UPS inverters, and pump/compressor systems requiring stable component supply across multi-year production cycles.

Supply support for IRGPS66160DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ IGBT product line targets high-efficiency, high-reliability power conversion in motor drives, solar inverters, and uninterruptible power supplies, emphasizing low-loss switching and rugged short-circuit behavior.

FAQ

What is the maximum gate-emitter voltage rating for IRGPS66160DPBF?

The absolute maximum gate-emitter voltage is ±20 V. Operation above +20 V risks permanent gate oxide damage, while operation below –20 V may cause threshold shift or latch-up. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure fast, noise-immune switching and minimize Miller-induced false turn-on.

Does IRGPS66160DPBF require a negative gate voltage for reliable turn-off?

While not strictly required, applying –5 V to –10 V during turn-off significantly improves noise immunity and prevents spurious turn-on due to dv/dt coupling through the Miller capacitance. This is especially critical in high-power, high-dv/dt inverter legs where stray inductance can induce >5 V gate spikes during collector voltage transitions.

Can IRGPS66160DPBF be paralleled without external emitter resistors?

Yes-its positive V_CE(sat) temperature coefficient enables stable current sharing among up to three devices with matched gate drive and symmetrical layout. However, individual gate resistors (≤10 Ω) and Kelvin emitter connections are still required to equalize dynamic turn-on/turn-off timing and prevent oscillation during switching transients.

What thermal interface material thickness is recommended for IRGPS66160DPBF's TO-247-3 tab?

A 0.1 mm thick, 1.5 W/m·K thermal pad or grease is recommended to achieve the specified R_thJC = 0.19 K/W. Thicker interfaces (>0.15 mm) increase thermal resistance by >15%, directly raising junction temperature and reducing safe operating area; thinner layers (<0.05 mm) risk voids and uneven contact under mechanical clamping force.

IRGPS66160DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-274AA

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 240 A

Current - Collector Pulsed (Icm):: 360 A

Vce(on) (Max) @ Vge, Ic:: 1.95V @ 15V, 120A

Power - Max:: 750 W

Switching Energy:: 4.47mJ (on), 3.43mJ (off)

Input Type:: Standard

Gate Charge:: 220 nC

Td (on/off) @ 25°C:: 80ns/190ns

Test Condition:: 400V, 120A, 4.7Ohm, 15V

Reverse Recovery Time (trr):: 95 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-247™ (TO-274AA)

IRGPS66160DPBF FAQ

1.How can I place an order for IRGPS66160DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGPS66160DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGPS66160DPBF reliable?

The price and inventory of IRGPS66160DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGPS66160DPBF is usually 5 days.

3.What payment methods are accepted for IRGPS66160DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGPS66160DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGPS66160DPBF?

IRGPS66160DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGPS66160DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGPS66160DPBF?

For technical support, including IRGPS66160DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGPS66160DPBF requirements.

6.How does Aetrix verify that IRGPS66160DPBF is sourced from the original manufacturer or authorized distributors?

All IRGPS66160DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGPS66160DPBF meets industry standards.

7.What is the process for return or replacement of IRGPS66160DPBF?

All IRGPS66160DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGPS66160DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGPS66160DPBF part is unused and in its original packaging.

Return procedure for IRGPS66160DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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