Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRGR2B60KDTRLPBF

Part No.:
IRGR2B60KDTRLPBF
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRGR2B60KDTRLPBF.pdf
Description:
IGBT NPT 600V 6.3A TO252AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,891

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRGR2B60KDTRLPBF from Infineon Technologies is a non-punch-through (NPT) IGBT rated for 600 V collector-emitter voltage, 6.3 A continuous collector current at Tc = 100 °C, and features a TO-252AA (DPAK) surface-mount package. It serves as a high-efficiency switching device in offline SMPS, AC motor drives, and induction heating inverters.

For engineers reviewing the IRGR2B60KDTRLPBF datasheet, IRGR2B60KDTRLPBF pinout, IRGR2B60KDTRLPBF application, or IRGR2B60KDTRLPBF equivalent, key selection criteria include VCE(sat) @ IC = 3 A, switching energy EON/EOFF, gate charge QG, short-circuit withstand time, and thermal resistance RthJC.

Technical Context

This IGBT employs an NPT silicon structure with field-stop layer, enabling balanced conduction and switching losses. Its gate threshold voltage VGE(th) is 5.5 V (min), and it supports gate drive voltages up to 20 V.

The device integrates an anti-parallel FRD with soft recovery characteristics (trr = 140 ns typical), optimized for reduced EMI in hard-switched topologies. Thermal performance is defined by RthJC = 2.5 K/W and RthJA = 62 K/W (standard PCB layout).

Key Specifications

ParameterValue and Actual Design Meaning
VCE max600 V - Supports 400 V DC bus designs with 50 % safety margin for surge transients.
IC (Tc = 100 °C)6.3 A - Sustains continuous operation in compact heatsink-limited power stages.
VCE(sat) @ IC = 3 A2.2 V (typ) - Limits conduction loss to ≤6.6 W at 3 A, critical for thermal budgeting.
EON + EOFF @ IC = 3 A1.2 µJ (typ) - Enables 100 kHz switching in low-power inverters without excessive loss.
QG27 nC - Determines gate driver peak current requirement (~1.35 A for 20 ns rise time).
tsc10 µs - Allows robust short-circuit protection implementation with standard desaturation detection.

Pinout & Package

IRGR2B60KDTRLPBF uses the TO-252AA (DPAK) thermally enhanced surface-mount package with gull-wing leads and exposed drain pad for PCB heat transfer.

Pin/TerminalCircuit RoleDesign Meaning
Gate (G)Control inputReceives isolated PWM signal; requires 15–20 V drive for full enhancement and low VCE(sat).
Collector (C)High-side switch outputConnects to DC bus positive; carries main load current and must be routed with low-inductance layout.
Emitter (E)Power return referenceServes as common source for gate drive and current sensing; requires Kelvin connection for accurate shunt measurement.

Key Features

FeatureDesign Value
NPT trench field-stop structureEnables stable VCE(sat) over temperature and reduces tail current for lower EOFF.
Integrated soft-recovery FRDReduces voltage overshoot and EMI during freewheeling, eliminating need for external snubber.
Low gate charge (QG = 27 nC)Lowers gate driver power dissipation and enables use of cost-effective 1-A drivers.
RthJC = 2.5 K/WSupports >5 W power dissipation with minimal heatsink in space-constrained applications.

Applications

Induction Cooking InverterIndustrial Fan Drive

Use Scenario: 2–3 kW resonant half-bridge operating at 20–50 kHz with variable frequency control.

IC Role / Device Role / Timing Role: Main switching device in upper leg; handles bidirectional current via integrated FRD during ZVS transitions.

Use Value: Soft-recovery FRD minimizes di/dt-induced voltage spikes, reducing filter component count and board area.

Use Scenario: 750 W three-phase VFD driving 4-pole PMSM with sensorless FOC.

IC Role / Device Role / Timing Role: Low-side switching element in inverter leg; commutates motor phase current with precise PWM timing.

Use Value: Stable VCE(sat) across –40 to 150 °C ensures consistent torque control without current-sense recalibration.

Offline LED DriverUPS Inverter Stage

Use Scenario: 150 W flyback-derived quasi-resonant converter with primary-side regulation.

IC Role / Device Role / Timing Role: Primary switch controlling energy transfer; operates in boundary conduction mode.

Use Value: 10 µs short-circuit rating allows reliable hiccup-mode fault response without latch-up.

Use Scenario: 1 kVA line-interactive UPS with 50 Hz SPWM inverter output stage.

IC Role / Device Role / Timing Role: High-efficiency switching device in full-bridge output stage; handles reactive loads.

Use Value: Low EON/EOFF enables >94 % inverter efficiency at full load while maintaining thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STGP6NC60HDVCE(sat) = 2.5 V @ 3 A; higher QG = 35 nC; no integrated FRD.Requires external fast diode; less suitable for compact resonant inverters.Prefer where gate drive headroom is ample and discrete diode layout is acceptable.
IXGH6N60B2Higher VCE(sat) = 2.7 V; tsc = 5 µs; TO-247 package.Larger footprint; limited short-circuit robustness in high-reliability systems.Choose only when TO-247 mechanical fit is mandatory and thermal design permits higher loss.

Compared with STGP6NC60HD and IXGH6N60B2, IRGR2B60KDTRLPBF delivers superior integration (FRD), lower conduction loss, and tighter short-circuit tolerance-making it optimal for space- and reliability-constrained 600 V, <1 kW inverter designs.

Availability

IRGR2B60KDTRLPBF is available at Aetrix Electronics and suitable for offline SMPS, induction heating inverters, and industrial fan drives requiring stable component supply and long-term production continuity.

Supply support for IRGR2B60KDTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions for automotive, industrial, and power conversion markets.

This part belongs to Infineon's TrenchStop™ IGBT2 family, designed specifically for cost-sensitive, medium-power industrial and consumer switching applications up to 1 kW.

FAQ

What is the maximum gate-emitter voltage rating for IRGR2B60KDTRLPBF?

The absolute maximum gate-emitter voltage is ±20 V. Operation above +20 V risks permanent gate oxide damage, while negative voltage beyond –10 V may cause unintended turn-on due to Miller effect. Recommended gate drive is +15 V for saturation and –5 V for robust turn-off.

Does IRGR2B60KDTRLPBF require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. For typical 15 V drive and 100 kHz switching, RG = 10 Ω (non-inductive) balances switching speed and EMI. Lower values increase EON/EOFF stress on the driver; higher values slow switching and raise losses.

Can IRGR2B60KDTRLPBF replace older IGBTs like IRG4BC20U in existing designs?

No direct replacement: IRG4BC20U is a 600 V, 2 A device in TO-220, while IRGR2B60KDTRLPBF is 6.3 A in TO-252AA with different VCE(sat), QG, and FRD integration. Layout, gate drive, and thermal design must be revalidated; not a drop-in substitute.

Is the integrated diode in IRGR2B60KDTRLPBF suitable for reverse recovery in hard-switched circuits?

Yes-the co-packaged FRD has soft recovery (trr = 140 ns) and low Qrr, making it suitable for hard-switched applications up to 100 kHz. It eliminates external diode placement errors and improves layout symmetry versus discrete implementations.

IRGR2B60KDTRLPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
6.3 A
Current - Collector Pulsed (Icm):
8 A
Vce(on) (Max) @ Vge, Ic:
2.25V @ 15V, 2A
Power - Max:
35 W
Switching Energy:
74µJ (on), 39µJ (off)
Input Type:
Standard
Gate Charge:
12 nC
Td (on/off) @ 25°C:
11ns/150ns
Test Condition:
400V, 2A, 100Ohm, 15V
Reverse Recovery Time (trr):
68 ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRGR2B60KDTRLPBF FAQ

1.How can I place an order for IRGR2B60KDTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGR2B60KDTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGR2B60KDTRLPBF reliable?

The price and inventory of IRGR2B60KDTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGR2B60KDTRLPBF is usually 5 days.

3.What payment methods are accepted for IRGR2B60KDTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGR2B60KDTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGR2B60KDTRLPBF?

IRGR2B60KDTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGR2B60KDTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGR2B60KDTRLPBF?

For technical support, including IRGR2B60KDTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGR2B60KDTRLPBF requirements.

6.How does Aetrix verify that IRGR2B60KDTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRGR2B60KDTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGR2B60KDTRLPBF meets industry standards.

7.What is the process for return or replacement of IRGR2B60KDTRLPBF?

All IRGR2B60KDTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGR2B60KDTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGR2B60KDTRLPBF part is unused and in its original packaging.

Return procedure for IRGR2B60KDTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRGR2B60KDTRLPBF Tags

  • IRGR2B60KDTRLPBF
  • IRGR2B60KDTRLPBF PDF
  • IRGR2B60KDTRLPBF Datasheet
  • IRGR2B60KDTRLPBF Specifications
  • IRGR2B60KDTRLPBF Images
  • Infineon Technologies
  • Infineon Technologies IRGR2B60KDTRLPBF
  • Buy IRGR2B60KDTRLPBF
  • IRGR2B60KDTRLPBF Price
  • IRGR2B60KDTRLPBF Distributor
  • IRGR2B60KDTRLPBF Supplier
  • IRGR2B60KDTRLPBF Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER