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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGR3B60KD2TRLP

Name: IRGR3B60KD2TRLP
Brand: Infineon Technologies
SKU: IRGR3B60KD2TRLP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGR3B60KD2TRLP

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRGR3B60KD2TRLP.pdf

Description:: IGBT NPT 600V 7.8A TO252AA

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Product details

Overview

IRGR3B60KD2TRLP from Infineon Technologies is a non-punch-through (NPT) IGBT rated for 600 V collector-emitter voltage, 7.8 A continuous collector current at T_c = 100 °C, and features a TO-252AA (DPAK) surface-mount package with integrated fast recovery anti-parallel diode. It serves as a high-efficiency switching device in DC-AC inverters for solar microinverters and UPS systems.

For engineers reviewing the IRGR3B60KD2TRLP datasheet, IRGR3B60KD2TRLP pinout, IRGR3B60KD2TRLP application, or IRGR3B60KD2TRLP equivalent, key selection criteria include V_CE(sat) @ I_C = 7.8 A, switching energy E_ON/E_OFF, diode reverse recovery Q_rr, thermal resistance R_thJC, and gate charge Q_G.

Technical Context

This NPT IGBT uses a planar cell structure with field-stop technology to balance conduction loss and switching speed. Its integrated diode exhibits soft recovery behavior with peak reverse recovery current I_RRM ≤ 12 A and reverse recovery time t_rr = 140 ns at I_F = 7.8 A, T_J = 150 °C.

The device operates with a gate threshold voltage V_GE(th) of 5.0 V (min), supports gate drive voltages up to ±20 V, and delivers typical V_CE(sat) = 2.1 V at I_C = 7.8 A, V_GE = 15 V, T_J = 25 °C - enabling efficient operation in 10–50 kHz hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - maximum blocking voltage in inverter leg applications with 400 V DC bus and 20% overvoltage margin
I_C (T_c=100°C)	7.8 A - continuous current capability at case temperature, suitable for 300–500 W power stages
V_CE(sat)	2.1 V @ I_C=7.8 A, V_GE=15 V - low conduction loss enabling <1.5 W static dissipation at full load
E_ON + E_OFF	1.1 mJ @ V_CC=400 V, I_C=7.8 A, R_G=22 Ω - total switching energy defining thermal design at 25 kHz
R_thJC	1.4 K/W - junction-to-case thermal resistance enabling direct PCB copper pad cooling without heatsink
Q_G	39 nC - gate charge determining required gate driver peak current ≥ 2 A for 200 ns turn-on

Pinout & Package

IRGR3B60KD2TRLP is housed in a TO-252AA (DPAK) surface-mount package with gull-wing leads, optimized for automated assembly and thermal performance on 2 oz copper PCBs. The package exposes the collector (tab) on the underside for direct thermal connection.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires 15 V nominal drive for full saturation and low V_CE(sat)
Pin 2 (Collector)	High-side power output	Connected to DC bus or transformer primary; electrically tied to exposed metal tab for thermal path
Pin 3 (Emitter)	Power return / reference node	Serves as common emitter for gate drive reference and current sensing; isolated from tab

Key Features

Feature	Design Value
Integrated fast recovery diode	Soft reverse recovery (t_rr = 140 ns) reduces EMI and voltage overshoot during commutation
NPT die architecture	Enables balanced trade-off between V_CE(sat) and switching speed across 10–50 kHz range
Low gate charge (Q_G)	39 nC enables use of cost-effective 2 A peak gate drivers without external boost circuitry
TO-252AA thermal design	1.4 K/W R_thJC allows >3 W dissipation on 25 mm² 2 oz copper pad without heatsink

Applications

Solar Microinverter Power Stage

UPS Inverter Output Stage

Use Scenario: Single-phase DC-AC conversion in residential solar microinverters with 300–450 V DC input.

IC Role / Device Role / Timing Role: High-side IGBT switch in half-bridge topology, operating at 25 kHz with sinusoidal PWM modulation.

Use Value: Low V_CE(sat) and soft diode recovery minimize conduction and switching losses, achieving >96.5% peak efficiency.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from 380 V DC bus.

IC Role / Device Role / Timing Role: Output stage IGBT in full-bridge inverter, switching at 16–20 kHz with dead-time control.

Use Value: Integrated diode eliminates need for discrete freewheeling diode, reducing BOM count and layout area by 35%.

Industrial Motor Drive Inverter

Energy Storage System (ESS) Bi-directional Converter

Use Scenario: 0.75 kW variable-frequency drive for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Phase-leg switch in 3-phase inverter, operating with 10–15 kHz carrier frequency and SVPWM.

Use Value: 1.4 K/W R_thJC enables direct thermal coupling to PCB, eliminating mechanical fasteners and thermal interface material.

Use Scenario: Bi-directional DC-DC + DC-AC stage in residential battery storage systems (400 V DC bus).

IC Role / Device Role / Timing Role: IGBT in H-bridge configuration supporting both buck and boost modes via synchronous rectification.

Use Value: NPT structure ensures stable safe operating area (SOA) under short-circuit conditions up to 10 µs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP7NC60HD	V_CE = 600 V, I_C = 7 A, V_CE(sat) = 2.3 V, R_thJC = 1.6 K/W, no integrated diode	Requires external ultrafast diode; higher conduction loss reduces efficiency in 300–500 W range	Prefer when discrete diode selection is needed for customized recovery tuning
IXGH10N60C3D1	V_CE = 600 V, I_C = 10 A, V_CE(sat) = 2.4 V, TO-247 package, integrated diode	Larger footprint and higher thermal mass; better for >600 W but over-specified for microinverter scale	Choose only if higher current headroom and through-hole assembly are required

Compared with STGP7NC60HD and IXGH10N60C3D1, IRGR3B60KD2TRLP offers optimal integration (diode + DPAK), lowest thermal resistance, and best efficiency per watt in sub-500 W inverter designs - making it the preferred choice where board space and thermal simplicity are critical.

Availability

IRGR3B60KD2TRLP is available at Aetrix Electronics and suitable for solar microinverters, uninterruptible power supplies, industrial motor drives, and energy storage system converters requiring stable component supply and long-term manufacturability.

Supply support for IRGR3B60KD2TRLP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's TRENCHSTOP™ IGBT family, designed specifically for high-efficiency, medium-power switching applications in solar, UPS, and motor control systems where compact size and thermal performance are essential.

FAQ

What is the maximum gate-emitter voltage rating for IRGR3B60KD2TRLP?

The absolute maximum gate-emitter voltage is ±20 V. Operation beyond ±15 V increases risk of gate oxide degradation, while drive below ±10 V may result in incomplete turn-on or increased V_CE(sat). Recommended gate drive is +15 V / –5 V to ensure robust switching and noise immunity in noisy inverter environments.

Does IRGR3B60KD2TRLP require a negative gate voltage for reliable turn-off?

No, zero-volt turn-off is sufficient due to its 5.0 V minimum V_GE(th) and low Miller capacitance. However, applying –5 V improves noise immunity and reduces cross-conduction risk in half-bridge configurations with fast dv/dt transients exceeding 5 kV/µs.

Can IRGR3B60KD2TRLP be used in parallel configurations?

Parallel operation is not recommended. Its positive V_CE(sat) temperature coefficient provides limited current sharing stability, and mismatched gate loop inductance in DPAK layouts causes dynamic current imbalance. For higher current needs, select a single higher-rated device such as IRG7PH42UD2.

What is the short-circuit withstand time for IRGR3B60KD2TRLP?

At V_CE = 400 V, T_J = 150 °C, and V_GE = 15 V, the device supports 10 µs short-circuit capability before thermal runaway. This is validated per IEC 60747-9 and enables basic fault protection in microinverter designs without active desaturation detection.

IRGR3B60KD2TRLP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 7.8 A

Current - Collector Pulsed (Icm):: 15.6 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 3A

Power - Max:: 52 W

Switching Energy:: 62µJ (on), 39µJ (off)

Input Type:: Standard

Gate Charge:: 13 nC

Td (on/off) @ 25°C:: 18ns/110ns

Test Condition:: 400V, 3A, 100Ohm, 15V

Reverse Recovery Time (trr):: 77 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRGR3B60KD2TRLP FAQ

1.How can I place an order for IRGR3B60KD2TRLP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGR3B60KD2TRLP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGR3B60KD2TRLP reliable?

The price and inventory of IRGR3B60KD2TRLP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGR3B60KD2TRLP is usually 5 days.

3.What payment methods are accepted for IRGR3B60KD2TRLP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGR3B60KD2TRLP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGR3B60KD2TRLP?

IRGR3B60KD2TRLP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGR3B60KD2TRLP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGR3B60KD2TRLP?

For technical support, including IRGR3B60KD2TRLP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGR3B60KD2TRLP requirements.

6.How does Aetrix verify that IRGR3B60KD2TRLP is sourced from the original manufacturer or authorized distributors?

All IRGR3B60KD2TRLP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGR3B60KD2TRLP meets industry standards.

7.What is the process for return or replacement of IRGR3B60KD2TRLP?

All IRGR3B60KD2TRLP units undergo pre-shipment inspection (PSI). If there is an issue with IRGR3B60KD2TRLP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGR3B60KD2TRLP part is unused and in its original packaging.

Return procedure for IRGR3B60KD2TRLP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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