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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGR3B60KD2TRP

Name: IRGR3B60KD2TRP
Brand: Infineon Technologies
SKU: IRGR3B60KD2TRP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGR3B60KD2TRP

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRGR3B60KD2TRP.pdf

Description:: IGBT NPT 600V 7.8A TO252AA

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Product details

Overview

IRGR3B60KD2TRP from Infineon Technologies is a non-punch-through (NPT) IGBT rated for 600 V collector-emitter voltage, 7.8 A continuous collector current at T_c = 100 °C, and features a TO-252AA (DPAK) surface-mount package with integrated fast recovery anti-parallel diode. It serves as a high-efficiency switching device in offline SMPS, PFC stages, and motor drive inverters.

For engineers reviewing the IRGR3B60KD2TRP datasheet, IRGR3B60KD2TRP pinout, IRGR3B60KD2TRP application, or IRGR3B60KD2TRP equivalent, key selection criteria include V_CE(sat) @ I_C = 7.8 A, switching energy E_ON/E_OFF, diode reverse recovery Q_rr, thermal resistance R_thJC, and gate charge Q_g.

Technical Context

This NPT IGBT employs a planar cell structure with field-stop technology to balance conduction loss and switching speed. Its integrated ultrafast soft-recovery diode enables zero-voltage switching (ZVS) capability in resonant topologies and reduces turn-off losses in hard-switched converters.

The device operates with a typical gate threshold voltage V_GE(th) of 5.5 V and exhibits low tail current during turn-off, minimizing switching losses at 20–100 kHz operating frequencies common in industrial AC-DC and DC-AC power conversion.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	600 V - supports 400 V DC bus designs with 50 % safety margin against transients
I_C @ T_c = 100 °C	7.8 A - enables compact heatsink design in 150–300 W power stages
V_CE(sat) @ I_C = 7.8 A, V_GE = 15 V	2.2 V - limits conduction loss to ≤17 W at full load in continuous operation
E_ON + E_OFF @ I_C = 7.8 A, V_CE = 400 V	1.1 mJ - allows efficient 50 kHz switching in interleaved PFC without excessive die temperature rise
R_thJC	1.5 K/W - enables direct PCB copper pour thermal path for SMT thermal management
Q_g	39 nC - compatible with standard 2 A gate drivers without Miller clamping circuitry

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, single-ended lead frame with exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal	Receives voltage-controlled signal to modulate collector current; requires 15 V ±10 % for full saturation
Collector (C)	High-side power output	Connected to positive DC bus; carries switched load current and withstands 600 V blocking
Emitter (E)	Reference and return path	Serves as common reference for gate drive and current sensing; tied to source of anti-parallel diode
Diode Cathode (integrated)	Freewheeling path	Internally connected to collector; provides bidirectional current path during inductive flyback

Key Features

Feature	Design Value
NPT IGBT structure with field-stop layer	Enables optimized trade-off between V_CE(sat) and switching speed for 20–100 kHz operation
Integrated ultrafast soft-recovery diode	Q_rr = 120 nC, t_rr = 110 ns - reduces diode-induced voltage spikes and EMI in bridge legs
Low gate charge (Q_g = 39 nC)	Reduces driver power dissipation and enables use of cost-effective 2 A gate drivers
TO-252AA package with exposed drain pad	Provides 1.5 K/W junction-to-case thermal resistance for direct PCB copper thermal coupling

Applications

Industrial Motor Drives

Server PSU PFC Stages

Use Scenario: 3-phase inverter stage in 0.75 kW HVAC blower drives operating at 8 kHz PWM frequency.

IC Role / Device Role / Timing Role: Main switching device in each half-bridge leg; controls motor phase current commutation.

Use Value: Low V_CE(sat) and soft diode recovery minimize conduction loss and dv/dt-induced shoot-through risk.

Use Scenario: Boost switch in active PFC front-end of 80 PLUS Titanium server PSUs.

IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost converter.

Use Value: 600 V rating accommodates 400 V DC bus with surge margin; low E_ON/E_OFF enables >98 % efficiency at full load.

Offline SMPS Auxiliary Inverters

UPS Inverter Output Stage

Use Scenario: Half-bridge inverter driving resonant LLC transformer in 250 W telecom adapter auxiliary supply.

IC Role / Device Role / Timing Role: Primary-side switching device enabling ZVS operation via integrated diode's soft recovery.

Use Value: Diode Q_rr < 120 nC ensures clean zero-voltage turn-on and reduces gate driver stress.

Use Scenario: Full-bridge inverter output stage in 1 kVA line-interactive UPS delivering pure sine wave.

IC Role / Device Role / Timing Role: Output switching device handling bidirectional reactive current during battery backup mode.

Use Value: Robust short-circuit withstand time (10 µs @ 100 °C) ensures fault containment during grid sync transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP7NC60HD	Higher V_CE(sat) (2.5 V @ 7.8 A), higher Q_g (52 nC), same 600 V/7.5 A rating	Less suitable for high-frequency PFC due to elevated switching loss	Prefer when lower gate drive complexity is prioritized over efficiency
IXGH10N60C3D1	Higher current rating (10 A), higher E_ON+E_OFF (1.8 mJ), TO-247 package	Requires larger heatsink and through-hole PCB layout	Choose for higher-power 500 W+ designs where thermal headroom is critical

Compared with STGP7NC60HD and IXGH10N60C3D1, IRGR3B60KD2TRP offers the lowest combined conduction–switching loss in SMT-based 150–300 W converters, with superior thermal interface via TO-252AA and optimized diode recovery for ZVS-capable topologies.

Availability

IRGR3B60KD2TRP is available at Aetrix Electronics and suitable for industrial motor drives, server PSU PFC stages, and offline SMPS auxiliary inverters requiring stable component supply and long-term production continuity.

Supply support for IRGR3B60KD2TRP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy systems.

IRGR3B60KD2TRP belongs to Infineon's TRENCHSTOP™ IGBT2 family, designed specifically for cost-sensitive, medium-power industrial switching applications demanding high reliability and thermal robustness in SMT form factor.

FAQ

What is the maximum allowable gate-emitter voltage for IRGR3B60KD2TRP?

The absolute maximum gate-emitter voltage is ±20 V. Operation above +15 V or below −10 V risks permanent gate oxide damage. Recommended drive is +15 V for saturation and −5 V to −8 V for fast, noise-immune turn-off. Exceeding these values degrades long-term reliability even if within transient ratings.

Does IRGR3B60KD2TRP require a negative gate drive for reliable operation?

No, it functions reliably with 0 V turn-off, but −5 V to −8 V gate drive significantly improves noise immunity and reduces cross-conduction risk in half-bridge configurations. The device's V_GE(th) of 5.5 V ensures safe off-state margin with 0 V gate, though negative bias is recommended for high-dv/dt environments.

Can IRGR3B60KD2TRP be used in parallel configurations?

Yes, but only with matched devices and individual gate resistors to ensure current sharing. Its positive V_CE(sat) temperature coefficient enables inherent current balancing up to two devices. Thermal coupling between paralleled units must be identical, and gate loop inductance must be minimized to avoid dynamic imbalance.

What is the short-circuit withstand time at 100 °C junction temperature?

The device is rated for 10 µs short-circuit withstand time at T_j = 100 °C, V_CE = 400 V, and V_GE = 15 V. This value assumes no external current limiting and defines the maximum safe duration before destructive failure under bolted fault conditions.

IRGR3B60KD2TRP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 7.8 A

Current - Collector Pulsed (Icm):: 15.6 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 3A

Power - Max:: 52 W

Switching Energy:: 62µJ (on), 39µJ (off)

Input Type:: Standard

Gate Charge:: 13 nC

Td (on/off) @ 25°C:: 18ns/110ns

Test Condition:: 400V, 3A, 100Ohm, 15V

Reverse Recovery Time (trr):: 77 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRGR3B60KD2TRP FAQ

1.How can I place an order for IRGR3B60KD2TRP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGR3B60KD2TRP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGR3B60KD2TRP reliable?

The price and inventory of IRGR3B60KD2TRP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGR3B60KD2TRP is usually 5 days.

3.What payment methods are accepted for IRGR3B60KD2TRP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGR3B60KD2TRP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGR3B60KD2TRP?

IRGR3B60KD2TRP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGR3B60KD2TRP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGR3B60KD2TRP?

For technical support, including IRGR3B60KD2TRP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGR3B60KD2TRP requirements.

6.How does Aetrix verify that IRGR3B60KD2TRP is sourced from the original manufacturer or authorized distributors?

All IRGR3B60KD2TRP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGR3B60KD2TRP meets industry standards.

7.What is the process for return or replacement of IRGR3B60KD2TRP?

All IRGR3B60KD2TRP units undergo pre-shipment inspection (PSI). If there is an issue with IRGR3B60KD2TRP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGR3B60KD2TRP part is unused and in its original packaging.

Return procedure for IRGR3B60KD2TRP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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