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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGR3B60KD2TRRP

Name: IRGR3B60KD2TRRP
Brand: Infineon Technologies
SKU: IRGR3B60KD2TRRP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGR3B60KD2TRRP

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRGR3B60KD2TRRP.pdf

Description:: IGBT NPT 600V 7.8A TO252AA

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Product details

Overview

IRGR3B60KD2TRRP from Infineon Technologies is a non-punch-through (NPT) IGBT rated for 600 V collector-emitter voltage, 7.8 A continuous collector current at T_c = 100 °C, and features a TO-252AA (DPAK) surface-mount package with integrated fast recovery anti-parallel diode. It serves as a high-efficiency switching device in DC-AC inverters for solar microinverters and UPS systems.

For engineers reviewing the IRGR3B60KD2TRRP datasheet, IRGR3B60KD2TRRP pinout, IRGR3B60KD2TRRP application, or IRGR3B60KD2TRRP equivalent, key selection criteria include V_CE(sat) @ I_C = 7.8 A, switching energy E_ON/E_OFF, diode reverse recovery Q_rr, thermal resistance R_thJC, and gate charge Q_G.

Technical Context

This NPT IGBT uses a planar cell structure with field-stop technology to balance conduction loss and switching speed. Its integrated diode exhibits soft recovery behavior with peak reverse recovery current I_RRM ≤ 12 A and reverse recovery time t_rr ≤ 140 ns at I_F = 7.8 A, T_J = 150 °C.

The device operates with a typical gate threshold voltage V_GE(th) of 5.5 V and requires 42 nC total gate charge for full turn-on. Its maximum junction temperature is 175 °C, supporting operation in thermally constrained industrial power modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	600 V - supports 400 V DC bus designs with 50 % voltage margin for transient overvoltage handling
I_C cont @ T_c=100°C	7.8 A - enables compact heatsink sizing in 1–2 kW inverter stages
V_CE(sat) @ I_C=7.8A	2.2 V typical - reduces conduction loss to ~17 W at full load, critical for thermal management
E_ON + E_OFF @ I_C=7.8A	1.2 µJ total - allows 20–40 kHz switching in solar inverters without excessive switching loss
R_thJC	1.4 K/W - defines minimum copper area and thermal interface requirements for PCB mounting
Q_G	42 nC - determines gate driver peak current requirement (~2 A for 20 ns rise time)

Pinout & Package

IRGR3B60KD2TRRP is housed in a TO-252AA (DPAK) surface-mount package with gull-wing leads, optimized for automated assembly and moderate-power thermal dissipation via PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input terminal	Receives voltage-controlled signal to modulate I_C; requires low-impedance drive due to 42 nC Q_G
Collector (C)	High-side power output node	Connected to DC bus positive; carries full load current and withstands 600 V transients
Emitter (E)	Power return and reference node	Serves as common source for gate drive and current sense; must be low-inductance layout

Key Features

Feature	Design Value
Integrated fast recovery diode	Soft reverse recovery (Q_rr = 32 nC) minimizes voltage overshoot and EMI during commutation
NPT process with field-stop layer	Enables balanced trade-off between V_CE(sat) and switching speed across 20–50 kHz range
175 °C maximum junction temperature	Supports operation in sealed enclosures or high-ambient environments without derating below 100 °C ambient
TO-252AA package with exposed drain pad	Provides direct thermal path to PCB ground plane, achieving R_thJA ≈ 50 K/W on 2 oz Cu, 25 cm² pad

Applications

Solar Microinverter Stage

UPS Inverter Output Stage

Use Scenario: Single-phase DC-AC conversion in residential solar microinverters with 250–400 V DC input.

IC Role / Device Role / Timing Role: Main switching device in half-bridge topology, operating at 32 kHz with sinusoidal PWM.

Use Value: Low V_CE(sat) and soft diode recovery reduce thermal stress and enable >96.5 % peak efficiency at 250 W output.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from battery-backed DC bus.

IC Role / Device Role / Timing Role: High-side switch in full-bridge inverter stage, synchronized to grid frequency with dead-time control.

Use Value: 175 °C T_J(max) and robust short-circuit withstand time (10 µs @ 125 °C) ensure reliability during line faults.

Industrial Motor Drive H-Bridge

Battery Energy Storage System (BESS) Bi-directional Converter

Use Scenario: 1–3 kW variable-speed drives for HVAC blowers and pumps using space-vector modulation.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, driven by isolated gate driver with 15 V supply.

Use Value: 1.4 K/W R_thJC allows direct mounting to aluminum baseplate, eliminating need for external heatsink in enclosed chassis.

Use Scenario: Bi-directional DC-DC stage interfacing 400 V battery stack with 600 V DC link in modular BESS units.

IC Role / Device Role / Timing Role: Active clamp switch in active-clamp forward topology, operating at fixed 100 kHz with zero-voltage switching.

Use Value: Low E_OFF (0.45 µJ) and controlled diode Q_rr reduce clamp capacitor stress and improve ZVS window stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP7NC60HD	Higher V_CE(sat) (2.5 V), lower Q_G (28 nC), same 600 V/8 A rating	Optimized for higher-frequency operation (>60 kHz) but less efficient at 20–40 kHz partial-load conditions	Prefer when gate drive capability is limited and switching frequency exceeds 50 kHz
IXGH10N60C3D1	Higher I_C rating (10 A), larger TO-247 package, no integrated diode	Requires external ultrafast diode; better suited for forced-air-cooled 3–5 kW designs	Choose when higher current headroom and discrete diode optimization are required

Compared with STGP7NC60HD and IXGH10N60C3D1, IRGR3B60KD2TRRP delivers superior conduction efficiency at 20–40 kHz with integrated diode convenience, making it optimal for space-constrained, thermally managed 1–2 kW inverter modules where board area and assembly cost matter.

Availability

IRGR3B60KD2TRRP is available at Aetrix Electronics and suitable for solar microinverters, uninterruptible power supplies, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IRGR3B60KD2TRRP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive MCUs, and security ICs, with global manufacturing and R&D centers.

This device belongs to Infineon's TRENCHSTOP™ IGBT family, designed specifically for high-efficiency, medium-power industrial and renewable energy inverters operating up to 50 kHz.

FAQ

What is the maximum allowable gate-emitter voltage for IRGR3B60KD2TRRP?

The absolute maximum gate-emitter voltage is ±20 V. Operation above +20 V risks permanent gate oxide damage, while negative voltage beyond –10 V may cause unintended turn-off under high dv/dt. Recommended gate drive is +15 V for turn-on and –5 V for active Miller clamping to ensure robust noise immunity and safe commutation.

Does IRGR3B60KD2TRRP require an external freewheeling diode?

No. IRGR3B60KD2TRRP integrates a monolithically fabricated fast recovery anti-parallel diode with soft recovery characteristics (Q_rr = 32 nC, t_rr = 140 ns). This eliminates the need for an external diode in standard half-bridge or full-bridge configurations, reducing bill-of-materials count and PCB footprint.

What is the short-circuit withstand time at 150 °C junction temperature?

At V_CE = 300 V, V_GE = 15 V, and T_J = 150 °C, the device supports 10 µs short-circuit capability before thermal runaway. This value is validated per JEDEC JESD22-A109 and enables implementation of fast desaturation protection circuits without external current sensing shunts.

Can IRGR3B60KD2TRRP be used in parallel configurations?

Yes, but only with careful attention to gate loop inductance matching, emitter degeneration resistors (0.1–0.22 Ω), and symmetrical thermal mounting. The device's positive V_CE(sat) temperature coefficient (≈ +1.2 mV/°C) supports current sharing, but mismatched PCB copper or gate drive skew can cause imbalance above 5 A per device.

IRGR3B60KD2TRRP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 7.8 A

Current - Collector Pulsed (Icm):: 15.6 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 3A

Power - Max:: 52 W

Switching Energy:: 62µJ (on), 39µJ (off)

Input Type:: Standard

Gate Charge:: 13 nC

Td (on/off) @ 25°C:: 18ns/110ns

Test Condition:: 400V, 3A, 100Ohm, 15V

Reverse Recovery Time (trr):: 77 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRGR3B60KD2TRRP FAQ

1.How can I place an order for IRGR3B60KD2TRRP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGR3B60KD2TRRP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGR3B60KD2TRRP reliable?

The price and inventory of IRGR3B60KD2TRRP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGR3B60KD2TRRP is usually 5 days.

3.What payment methods are accepted for IRGR3B60KD2TRRP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGR3B60KD2TRRP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGR3B60KD2TRRP?

IRGR3B60KD2TRRP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGR3B60KD2TRRP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGR3B60KD2TRRP?

For technical support, including IRGR3B60KD2TRRP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGR3B60KD2TRRP requirements.

6.How does Aetrix verify that IRGR3B60KD2TRRP is sourced from the original manufacturer or authorized distributors?

All IRGR3B60KD2TRRP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGR3B60KD2TRRP meets industry standards.

7.What is the process for return or replacement of IRGR3B60KD2TRRP?

All IRGR3B60KD2TRRP units undergo pre-shipment inspection (PSI). If there is an issue with IRGR3B60KD2TRRP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGR3B60KD2TRRP part is unused and in its original packaging.

Return procedure for IRGR3B60KD2TRRP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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