Infineon Technologies IRGR4607DTRPBF

Overview

IRGR4607DTRPBF from Infineon Technologies (formerly International Rectifier) is a 600 V, 11 A rated insulated gate bipolar transistor (IGBT) in D-Pak (TO-252) package with integrated ultrafast soft-recovery anti-parallel diode. It delivers 1.75 V typical V_CE(on) at 4.0 A/15 V_GE/25°C and supports 5 µs short-circuit withstand time at 175°C junction temperature. Used in industrial motor drives, UPS inverters, and solar string inverters where high efficiency and rugged switching under clamped inductive loads are required.

For engineers reviewing the IRGR4607DTRPBF datasheet, IRGR4607DTRPBF pinout, IRGR4607DTRPBF application, or IRGR4607DTRPBF equivalent, key selection criteria include its 600 V V_CES, 175°C maximum junction temperature, 9.0 nC total gate charge, R_θJC(IGBT) = 2.6°C/W, and integrated diode reverse recovery energy of 7.4 µJ at 175°C - all critical for thermal design and switching loss optimization in hard-switched 3–10 kHz power stages.

Technical Context

This IGBT employs a trench-gate field-stop structure optimized for low conduction and switching losses in medium-power, medium-frequency applications. Its positive V_CE(on) temperature coefficient enables stable current sharing in parallel configurations, while the integrated diode features soft reverse recovery (trr = 48 ns, Q_RR = 12 nC) to minimize voltage overshoot and EMI during turn-off.

The device is characterized for RBSOA up to 600 V and 16 A at 175°C with square safe operating area, and SCSOA validated for 5 µs at V_CC = 400 V and V_GE = +15 V. Gate drive requirements are standardized for ±20 V continuous and ±30 V transient operation, supporting robust control with standard 15 V gate drivers.

Key Specifications

Pinout & Package

IRGR4607DTRPBF uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal conduction. The package measures 6.7 mm × 6.2 mm × 2.4 mm and requires soldering to a copper thermal pad on PCB per AN-994 guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with STGP10NC60KD, IRGR4607DTRPBF offers lower gate charge and integrated diode for reduced layout complexity; versus IXGN100N60B3, it provides optimal cost-performance balance for sub-10 kW systems with tighter space constraints and moderate gate drive capability.

Availability

IRGR4607DTRPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar string inverters requiring stable component supply across multi-year production cycles.

Supply support for IRGR4607DTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices since acquiring International Rectifier in 2015.

This device belongs to Infineon's legacy High Voltage IGBT portfolio, designed specifically for medium-power industrial inverters operating at 3–20 kHz with emphasis on ruggedness, thermal stability, and integration of complementary diode functionality.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies 100 Ω for E_on/E_off characterization at 175°C. For reliable operation, R_G should not exceed 100 Ω to maintain t_d(off) ≤ 120 ns and prevent excessive switching loss. Lower values (22–47 Ω) are recommended for 16 kHz+ operation to meet 5 µs SCSOA timing margins.

Can IRGR4607DTRPBF be used in parallel configurations?

Yes - its positive V_CE(on) temperature coefficient ensures inherent current sharing. Parallel operation requires matched gate drive paths, identical PCB trace lengths, and shared thermal interface to keep ΔT_J < 5°C. Derating to 80% of total rated current is advised per Infineon AN-1001.

What is the thermal resistance from junction to ambient under standard PCB mount conditions?

R_θJA is 50°C/W for D-Pak mounted on 1"² FR-4 PCB with 1 oz copper, per datasheet Figure 3. This assumes full thermal pad soldering per AN-994 footprint. With 2 oz copper and thermal vias, R_θJA improves to ~35°C/W, enabling 10 A continuous operation at T_A = 50°C.

Does the integrated diode support bidirectional conduction in synchronous rectification mode?

No - the integrated diode is a monolithic, non-controlled freewheeling element with fixed forward voltage and soft recovery. It cannot be actively gated like a MOSFET body diode; synchronous rectification requires external MOSFETs controlled by dedicated gate signals.