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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGS10B60KDPBF

Name: IRGS10B60KDPBF
Brand: Infineon Technologies
SKU: IRGS10B60KDPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGS10B60KDPBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRGS10B60KDPBF.pdf

Description:: IGBT 600V 22A 156W D2PAK

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Product details

Overview

IRGS10B60KDPBF from Infineon (formerly International Rectifier) is a 600 V, 19 A (T_C = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery anti-parallel diode in D²PAK (TO-263) package. It features 1.8 V typical V_CE(on), 10 μs short-circuit capability, square RBSOA, and 90 ns typ. diode reverse recovery time - optimized for motor control inverters and industrial switching power supplies.

For engineers reviewing the IRGS10B60KDPBF datasheet, IRGS10B60KDPBF pinout, IRGS10B60KDPBF application, or IRGS10B60KDPBF equivalent, key selection criteria include its positive V_CE(on) temperature coefficient, low EMI due to ultrasoft diode recovery, rugged clamped-inductive switching performance, and parallel operation suitability via excellent current sharing.

Technical Context

This IGBT employs non-punch-through (NPT) technology delivering stable V_CE(on) across temperature (1.5–2.2 V at 10 A, 25–150°C) and robust short-circuit withstand (10 μs at T_J = 150°C). Its integrated diode exhibits 1.30–1.45 V forward drop at 10 A and 150°C, with 245–330 μJ reverse recovery energy.

The device supports high-efficiency hard-switching topologies with 38 nC total gate charge, 140–247 μJ turn-on loss, and 250–360 μJ turn-off loss (T_J = 25°C, V_CC = 400 V, R_G = 47 Ω). Junction-to-case thermal resistance is 0.8 °C/W (IGBT) and 3.4 °C/W (diode), enabling compact heatsink designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Withstands DC bus voltages up to 400 V nominal systems with 50% safety margin.
I_C @ T_C = 100°C	19 A - Continuous output current rating under real-world heatsink conditions.
V_CE(on) typ.	1.8 V @ 10 A, 15 V V_GE - Low conduction loss enabling >98% inverter efficiency at mid-load.
t_sc	10 μs @ T_J = 150°C - Enables reliable overcurrent protection without desaturation circuitry delay.
trr	90 ns typ. @ 10 A, 400 V - Minimizes diode-induced voltage spikes and EMI in bridge-leg commutation.
E_rec	245–330 μJ @ T_J = 150°C - Quantifies recoverable energy loss during diode turn-off, critical for thermal design.
R_θJC (IGBT)	0.8 °C/W - Directly determines junction temperature rise above heatsink for thermal margin analysis.

Pinout & Package

D²PAK (TO-263) surface-mount package with isolated tab (pin 3), standard 3-pin layout: Gate (pin 1), Collector (pin 2), Emitter (pin 3/tab).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance MOS-controlled input; requires 15 V drive for full saturation and 38 nC total charge handling.
Pin 2	Collector	Main high-side current path; electrically isolated from tab; rated for 600 V blocking and 44 A pulsed.
Pin 3 / Tab	Emitter	Low-side return node and thermal interface; tab must be soldered to PCB copper for 0.8 °C/W R_θJC.

Key Features

Feature	Design Value
Ultrafast soft-recovery diode	90 ns trr and 245 μJ E_rec reduce voltage overshoot and snubber losses in inductive loads.
Square RBSOA	Full-rated voltage and current capability under reverse-biased switching - enables robust gate drive design.
Positive V_CE(on) tempco	Ensures inherent current sharing in parallel configurations without external ballasting resistors.
10 μs short-circuit capability	Allows use with simple fixed-time fault response, eliminating need for fast analog desat detection.
Low EMI profile	Controlled di/dt and soft recovery minimize conducted emissions in motor drive EMI filter sizing.

Applications

Industrial Motor Drives

Uninterruptible Power Supplies

Use Scenario: Three-phase inverter stage in 1–3 kW HVAC compressors and pump drives.

IC Role / Device Role / Timing Role: Main switching element in leg topology; handles 16 kHz PWM with <100 ns dead-time tolerance.

Use Value: 1.8 V V_CE(on) reduces conduction loss by 12% vs. comparable 2.2 V devices, improving system efficiency at partial load.

Use Scenario: DC-AC inverter in online double-conversion UPS systems with battery backup.

IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage; operates with 50/60 Hz fundamental + 20 kHz carrier.

Use Value: Square RBSOA ensures safe operation during line transients and zero-crossing commutation stress.

Solar Microinverters

Induction Heating Systems

Use Scenario: Full-bridge DC-AC stage in single-phase 250–500 W microinverters interfacing PV panels.

IC Role / Device Role / Timing Role: Synchronous rectification and inversion switch; subjected to bidirectional current and reverse recovery.

Use Value: Integrated ultrasoft diode eliminates need for discrete antiparallel diode, reducing BOM count and layout area.

Use Scenario: Resonant half-bridge in 1–5 kW domestic induction cooktops operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Hard-switched power switch managing high di/dt (≥1 kA/μs) and clamped inductive energy.

Use Value: 44 A pulsed current rating and 10 μs short-circuit capability support burst-mode operation without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRG4PH50UD-EP	Higher V_CE(on) (2.2 V typ.), lower Q_g (29 nC), TO-247 package.	Larger footprint; better suited for forced-air-cooled 5+ kW designs with lower switching frequency.	Prefer when thermal mass allows larger package and gate drive power budget is constrained.
STGP10NC60KD	Lower I_C (10 A @ 100°C), higher trr (120 ns), same D²PAK package.	Reduced current capacity limits use to sub-1 kW motor drives; higher diode loss increases thermal stress.	Select only if cost sensitivity outweighs efficiency and reliability requirements in low-power applications.

Compared with IRG4PH50UD-EP and STGP10NC60KD, IRGS10B60KDPBF delivers superior current density and diode softness in a compact D²PAK, making it optimal for space-constrained, medium-power motor drives where EMI and thermal management are critical.

Availability

IRGS10B60KDPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar microinverters, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for IRGS10B60KDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

This device belongs to Infineon's legacy High Voltage IGBT portfolio, designed specifically for high-efficiency, high-reliability industrial switching applications demanding ruggedness, soft switching behavior, and thermal stability.

FAQ

Is IRGS10B60KDPBF RoHS-compliant and lead-free?

Yes. The "PbF" suffix confirms compliance with RoHS Directive 2011/65/EU and JEDEC J-STD-609. The device uses matte tin plating on leads and lead-free solder-compatible packaging materials, with no exemption claimed for lead content.

What is the recommended gate resistor value for 16 kHz PWM operation?

A 47 Ω gate resistor is validated per datasheet switching characterization (Fig. 14–16) for 16 kHz operation at 10 A, balancing switching loss (E_on/E_off) and dv/dt control. Lower values (22–33 Ω) increase peak gate current but reduce losses; higher values (>68 Ω) suppress ringing at the expense of increased E_off.

Can IRGS10B60KDPBF be used in parallel configurations?

Yes. Its positive V_CE(on) temperature coefficient and matched die characteristics enable stable current sharing. Application Note AN-994 recommends symmetrical PCB layout, individual gate resistors (≤5 Ω difference), and Kelvin emitter connections to achieve ≤10% current imbalance at full load.

Does the integrated diode support synchronous rectification in a buck converter?

No. The diode is optimized for ultrafast soft recovery in inductive switching (e.g., motor drives), not unidirectional freewheeling. Its 1.3 V forward drop and 90 ns trr exceed typical synchronous rectifier requirements; dedicated low-V_F Schottky or MOSFETs are preferred for buck output stages.

IRGS10B60KDPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 22 A

Current - Collector Pulsed (Icm):: 44 A

Vce(on) (Max) @ Vge, Ic:: 2.2V @ 15V, 10A

Power - Max:: 156 W

Switching Energy:: 140µJ (on), 250µJ (off)

Input Type:: Standard

Gate Charge:: 38 nC

Td (on/off) @ 25°C:: 30ns/230ns

Test Condition:: 400V, 10A, 47Ohm, 15V

Reverse Recovery Time (trr):: 90 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRGS10B60KDPBF FAQ

1.How can I place an order for IRGS10B60KDPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGS10B60KDPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGS10B60KDPBF reliable?

The price and inventory of IRGS10B60KDPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGS10B60KDPBF is usually 5 days.

3.What payment methods are accepted for IRGS10B60KDPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGS10B60KDPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGS10B60KDPBF?

IRGS10B60KDPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGS10B60KDPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGS10B60KDPBF?

For technical support, including IRGS10B60KDPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGS10B60KDPBF requirements.

6.How does Aetrix verify that IRGS10B60KDPBF is sourced from the original manufacturer or authorized distributors?

All IRGS10B60KDPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGS10B60KDPBF meets industry standards.

7.What is the process for return or replacement of IRGS10B60KDPBF?

All IRGS10B60KDPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGS10B60KDPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGS10B60KDPBF part is unused and in its original packaging.

Return procedure for IRGS10B60KDPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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