Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRGS10B60KDTRRP

Part No.:
IRGS10B60KDTRRP
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRGS10B60KDTRRP.pdf
Description:
IGBT 600V 22A 156W D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,362

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRGS10B60KDTRRP from Infineon Technologies is a 600 V, 19 A (TC = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery anti-parallel diode in D²PAK (TO-263) package. It features 1.8 V typical VCE(on), 10 μs short-circuit capability, square RBSOA, and 90 ns typ. diode reverse recovery time (trr). Designed for motor control inverters requiring low EMI and parallel operation.

For engineers reviewing the IRGS10B60KDTRRP datasheet, IRGS10B60KDTRRP pinout, IRGS10B60KDTRRP application, or IRGS10B60KDTRRP equivalent, key selection criteria include VCE(on) temperature coefficient, diode softness (Erec = 245–330 μJ), RBSOA robustness, and gate charge (Qg = 38 nC) for optimized switching loss trade-offs.

Technical Context

This IGBT employs non-punch-through (NPT) technology with positive VCE(on) temperature coefficient and 0.3 V/°C breakdown voltage drift, enabling stable current sharing in paralleled configurations. Its monolithic integration of an ultra-soft recovery diode eliminates external freewheeling diode requirements in bridge-leg topologies.

The device delivers full square reverse bias safe operating area (RBSOA) up to 600 V and supports clamped inductive load currents up to 44 A. Switching performance is characterized at VCC = 400 V, IC = 10 A, RG = 47 Ω, with td(off) = 250 ns and Eoff = 350–464 μJ at TJ = 150°C.

Key Specifications

Parameter Value and Actual Design Meaning
VCES 600 V - Withstands DC bus voltages up to 600 V in motor drive DC-link applications.
IC @ TC = 100°C 19 A - Continuous output current rating under industrial thermal conditions (heatsink-mounted).
VCE(on) typ. 1.8 V @ IC = 10 A, VGE = 15 V - Low conduction loss enabling high-efficiency 3-phase inverter stages.
tsc 10 μs @ TJ = 150°C - Enables reliable short-circuit protection without desaturation circuitry in servo drives.
trr typ. 90 ns @ IF = 10 A, TJ = 150°C - Ultra-soft reverse recovery minimizes voltage overshoot and EMI in hard-switched bridges.
Qg 38 nC - Gate charge value directly determines required gate driver peak current and turn-on energy.
RθJC (IGBT) 0.8 °C/W - Junction-to-case thermal resistance enables precise heatsink sizing for 156 W max power dissipation.

Pinout & Package

IRGS10B60KDTRRP is housed in a surface-mount D²PAK (TO-263) package with three terminals: Gate (G), Collector (C), and Emitter (E). The exposed drain pad (Collector) serves as the primary thermal path to the PCB copper plane.

Pin/Terminal Circuit Role Design Meaning
Gate (G) Control input Receives 15 V logic-level gate drive; requires ≤ ±20 V absolute max; Qg = 38 nC defines driver strength needs.
Collector (C) High-side power output Connected to DC bus (+); electrically and thermally coupled to exposed metal tab; rated for 600 V blocking.
Emitter (E) Power return / reference node Serves as common emitter for IGBT and cathode for integrated diode; critical for low-inductance source routing.

Key Features

Feature Design Value
Ultrafast soft-recovery diode Erec = 245–330 μJ and trr = 90–105 ns enable low-voltage ringing and reduced snubber losses in inverter leg commutation.
Square RBSOA Full 600 V × 44 A safe operating area at TJ = 150°C ensures reliability during transient overvoltage events in motor phase-legs.
Positive VCE(on) tempco Enables inherent current balancing when multiple devices operate in parallel without external ballasting resistors.
10 μs short-circuit capability Allows use in servo and spindle drives where fast fault detection (<10 μs) is feasible, reducing need for complex desat protection.
Low VF diode VFM = 1.30–1.45 V @ IF = 10 A reduces conduction loss in regenerative braking and freewheeling modes.

Applications

Industrial Motor Inverters Appliance Drive Modules

Use Scenario: 3-phase inverter stage in 0.75–2.2 kW variable-frequency drives for pumps, fans, and compressors.

IC Role / Device Role / Timing Role: High-side IGBT switch with integrated freewheeling diode in each half-bridge leg.

Use Value: Square RBSOA and 10 μs short-circuit rating support robust operation under stall and overload conditions without derating.

Use Scenario: Compact BLDC inverter in washing machine drum drives and HVAC indoor fan modules.

IC Role / Device Role / Timing Role: Low-loss switching element in space-constrained, thermally limited PCB layouts.

Use Value: D²PAK package and 0.8 °C/W RθJC allow direct copper pour thermal coupling, eliminating need for mechanical heatsinks.

Electric Power Steering (EPS) Small Servo Drives

Use Scenario: 12–48 V DC-fed 3-phase inverter for brushless torque assist motors in automotive EPS systems.

IC Role / Device Role / Timing Role: Fast-switching, low-Eoff IGBT in safety-critical H-bridge with tight thermal constraints.

Use Value: Ultra-soft diode (trr = 90 ns, Erec = 245 μJ) suppresses EMI to meet CISPR 25 Class 5 limits without added filtering.

Use Scenario: Position-controlled servo amplifier for CNC axes and robotic joints (≤ 1 kW).

IC Role / Device Role / Timing Role: High-fidelity switching device supporting >10 kHz PWM with minimal dead-time distortion.

Use Value: Positive VCE(on) temperature coefficient and matched VGE(th) enable precise current sharing across paralleled devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switch with integrated diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRGB10B60KDPbF TO-220AB package; identical electrical specs but higher RθJC (1.0 °C/W vs. 0.8 °C/W); no surface-mount footprint. Preferred for through-hole prototyping or lower-volume industrial controls where manual assembly is acceptable. Select when mechanical mounting flexibility outweighs thermal or density advantages of D²PAK.
IRGSL10B60KDPbF TO-262 (I²PAK) package; same die, slightly higher RθJC (0.9 °C/W); leadform allows easier wave soldering than D²PAK. Suitable for high-reliability industrial PLC output modules requiring IPC-compliant through-hole assembly. Choose when automated through-hole reflow compatibility is required without sacrificing thermal performance.

Compared with IRGB10B60KDPbF and IRGSL10B60KDPbF, IRGS10B60KDTRRP offers the lowest junction-to-case thermal resistance and highest power density, making it optimal for compact, high-power-density motor drive PCBs where thermal management via PCB copper is prioritized.

Availability

IRGS10B60KDTRRP is available at Aetrix Electronics and suitable for industrial motor inverters, appliance drive modules, and electric power steering systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IRGS10B60KDTRRP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's StrongIRFET™ IGBT family, engineered specifically for high-efficiency, high-reliability motor control applications demanding rugged short-circuit behavior and soft switching characteristics.

FAQ

What is the maximum gate-emitter voltage rating for IRGS10B60KDTRRP?

The absolute maximum VGE is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for turn-off to ensure robust noise immunity and minimize Miller-induced false turn-on during high di/dt switching.

Can IRGS10B60KDTRRP be used in parallel without external emitter resistors?

Yes - its positive VCE(on) temperature coefficient and tightly distributed VGE(th) (3.5–5.5 V) enable stable current sharing across paralleled units. However, matched gate loop inductance and symmetrical PCB layout remain essential to prevent dynamic current imbalance.

What is the significance of the "ultrafast soft recovery diode" in this IGBT?

The integrated diode exhibits 90 ns trr and low reverse recovery energy (Erec = 245–330 μJ), minimizing voltage overshoot and EMI during commutation. This eliminates need for external ultrafast diodes and simplifies gate driver design by reducing snubber requirements in bridge-leg configurations.

How does the 10 μs short-circuit capability translate to system-level protection?

This rating means the device can withstand a VCE = 600 V, IC = 44 A short-circuit condition for 10 μs at TJ = 150°C before thermal runaway. System designers must implement gate drive desaturation detection with <10 μs response time to safely shut down before failure.

IRGS10B60KDTRRP Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
22 A
Current - Collector Pulsed (Icm):
44 A
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 10A
Power - Max:
156 W
Switching Energy:
140µJ (on), 250µJ (off)
Input Type:
Standard
Gate Charge:
38 nC
Td (on/off) @ 25°C:
30ns/230ns
Test Condition:
400V, 10A, 47Ohm, 15V
Reverse Recovery Time (trr):
90 ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRGS10B60KDTRRP FAQ

1.How can I place an order for IRGS10B60KDTRRP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGS10B60KDTRRP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGS10B60KDTRRP reliable?

The price and inventory of IRGS10B60KDTRRP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGS10B60KDTRRP is usually 5 days.

3.What payment methods are accepted for IRGS10B60KDTRRP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGS10B60KDTRRP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGS10B60KDTRRP?

IRGS10B60KDTRRP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGS10B60KDTRRP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGS10B60KDTRRP?

For technical support, including IRGS10B60KDTRRP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGS10B60KDTRRP requirements.

6.How does Aetrix verify that IRGS10B60KDTRRP is sourced from the original manufacturer or authorized distributors?

All IRGS10B60KDTRRP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGS10B60KDTRRP meets industry standards.

7.What is the process for return or replacement of IRGS10B60KDTRRP?

All IRGS10B60KDTRRP units undergo pre-shipment inspection (PSI). If there is an issue with IRGS10B60KDTRRP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGS10B60KDTRRP part is unused and in its original packaging.

Return procedure for IRGS10B60KDTRRP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRGS10B60KDTRRP Tags

  • IRGS10B60KDTRRP
  • IRGS10B60KDTRRP PDF
  • IRGS10B60KDTRRP Datasheet
  • IRGS10B60KDTRRP Specifications
  • IRGS10B60KDTRRP Images
  • Infineon Technologies
  • Infineon Technologies IRGS10B60KDTRRP
  • Buy IRGS10B60KDTRRP
  • IRGS10B60KDTRRP Price
  • IRGS10B60KDTRRP Distributor
  • IRGS10B60KDTRRP Supplier
  • IRGS10B60KDTRRP Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER