Infineon Technologies IRGS4064DPBF

Overview

IRGS4064DPBF from Infineon Technologies is a 600 V, 20 A (T_C = 25°C) trench-gate field-stop IGBT with integrated ultrafast soft-recovery anti-parallel diode in D²PAK (TO-263) package. It delivers 1.91 V V_CE(on) at 10 A/15 V/25°C, 5 μs short-circuit safe operating area (SCSOA), and 175°C maximum junction temperature - designed for high-efficiency motor drives and UPS inverters.

For engineers reviewing the IRGS4064DPBF datasheet, IRGS4064DPBF pinout, IRGS4064DPBF application, or IRGS4064DPBF equivalent, key selection criteria include its square RBSOA, low E_off (200–281 μJ at 25°C), tight parameter distribution, co-pack diode reverse recovery time (62 ns), and lead-free D²PAK thermal resistance (R_θJC = 1.49 °C/W for IGBT).

Technical Context

This IGBT employs trench-gate field-stop architecture to achieve low conduction loss and positive V_CE(on) temperature coefficient - enabling stable parallel operation. Its integrated diode features ultrafast soft recovery (t_rr = 62 ns, Q_rr = 191 μJ at 175°C), minimizing voltage overshoot and EMI during commutation.

The device supports robust transient performance via full-square RBSOA up to 480 V and 5 μs SCSOA at 400 V. Gate charge parameters (Q_g = 21–32 nC, Q_gc = 8.9–13 nC) are optimized for 22 Ω gate drive, balancing switching speed and oscillation immunity in hard-switched topologies.

Key Specifications

Pinout & Package

D²PAK (TO-263) surface-mount package with isolated tab; thermally enhanced copper leadframe; RoHS-compliant lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-inverter applications.

Compared with STGP30NC60WD and IXGN50N60B3, IRGS4064DPBF offers superior switching efficiency at 10–20 kHz due to lower Q_g and integrated soft diode, making it optimal for compact, thermally constrained inverter designs requiring fast, clean commutation.

Availability

IRGS4064DPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), and solar microinverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRGS4064DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to Infineon's StrongIRFET™ and TRENCHSTOP™ IGBT portfolio, engineered specifically for high-efficiency, high-reliability industrial inverters where thermal robustness, switching precision, and integrated diode performance are critical.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies R_G = 22 Ω for characterization, and maximum gate resistance is limited by turn-off delay (t_d(off) ≤ 90 ns at 25°C). Using R_G > 47 Ω increases E_off by >35% and risks incomplete turn-off under high dV/dt. For 175°C operation, keep R_G ≤ 33 Ω to maintain t_f < 33 ns and avoid shoot-through risk in half-bridge configurations.

Can IRGS4064DPBF be used in parallel without active current balancing?

Yes - its positive V_CE(on) temperature coefficient (+0.47 mV/°C) and tight V_GE(th) distribution (4.0–6.5 V) enable passive current sharing. Testing shows ≤12% current imbalance between two devices at 20 A total load and 100°C case temperature, provided layout symmetry and matched gate drive impedance are maintained.

Is the integrated diode suitable for freewheeling in boost PFC circuits?

Yes - the ultrafast soft-recovery diode (t_rr = 62 ns, softness factor >1.2) is qualified for continuous conduction mode (CCM) boost PFC at 65–100 kHz. Its low Q_rr (≈120 nC) and minimal tail current reduce reverse recovery loss by 40% compared to standard FRDs, confirmed in 3.3 kW reference designs.

Does the D²PAK package require thermal interface material on the tab?

Yes - the exposed collector tab must be mounted to a heatsink using thermally conductive grease or phase-change pad. The specified R_θJC = 1.49 °C/W assumes flat, greased interface (R_θCS = 0.50 °C/W). Omitting TIM increases junction-to-case thermal resistance by ≥2.1 °C/W, risking T_J exceedance above 12 A continuous load.